Min; Wei-Lun

Patent Applications and Registrations

Patent applications and USPTO patent grants for Min; Wei-Lun.The latest application filed is for "method of forming transistors of different configurations".

Company Profile

2.3.6

Min; Wei-Lun - Hsinchu TW
Min; Wei-Lun - Hsinchu City TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method Of Forming Transistors Of Different Configurations App 20220310851 - Min; Wei-Lun ; et al.	2022-09-29
Method Of Manufacturing Field Effect Transistor With Spacer Structure App 20220262918 - Min; Wei-Lun ; et al.	2022-08-18
Semiconductor device with air gaps between metal gates and method of forming the same Grant 11,387,146 - Min , et al. July 12, 2	2022-07-12
Method of forming transistors of different configurations Grant 11,362,217 - Min , et al. June 14, 2	2022-06-14
FinFET having fluorine-doped gate sidewall spacers Grant 11,355,615 - Min , et al. June 7, 2	2022-06-07
Method Of Forming Transistors Of Different Configurations App 20220165881 - Min; Wei-Lun ; et al.	2022-05-26
Field Effect Transistor And Method Of Manufacturing The Same App 20210226030 - Min; Wei-Lun ; et al.	2021-07-22
Semiconductor Device with Air Gaps Between Metal Gates and Method of Forming the Same App 20210098309 - Min; Wei-Lun ; et al.	2021-04-01
Air Spacer Formation for Semiconductor Devices App 20210090959 - Min; Wei-Lun ; et al.	2021-03-25

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