| Patent | Date |
|---|
Method Of Forming Memory Cell
App 20220302209 - Tseng; Yuan-Tai ; et al. | 2022-09-22 |
Memory device with flat-top bottom electrodes and methods for forming the same
Grant 11,437,431 - Min September 6, 2 | 2022-09-06 |
Trench Formation Scheme For Programmable Metallization Cell To Prevent Metal Redeposit
App 20220278170 - Sung; Fu-Ting ; et al. | 2022-09-01 |
Etch stop layer for memory device formation
Grant 11,380,580 - Huang , et al. July 5, 2 | 2022-07-05 |
Semiconductor structure and method of manufacturing the same
Grant 11,362,265 - Sung , et al. June 14, 2 | 2022-06-14 |
Trench formation scheme for programmable metallization cell to prevent metal redeposit
Grant 11,342,379 - Sung , et al. May 24, 2 | 2022-05-24 |
Buffer Layer In Memory Cell To Prevent Metal Redeposition
App 20220123207 - Min; Chung-Chiang ; et al. | 2022-04-21 |
Sidewall Spacer Structure For Memory Cell
App 20210384413 - Chang; Yao-Wen ; et al. | 2021-12-09 |
Method Of Forming Memory Cell
App 20210359003 - Tseng; Yuan-Tai ; et al. | 2021-11-18 |
Non-volatile Memory Device And Manufacturing Technology
App 20210351348 - Hsu; Chern-Yow ; et al. | 2021-11-11 |
Semiconductor Structure And Method Of Manufacturing The Same
App 20210343932 - SUNG; Fu-Ting ; et al. | 2021-11-04 |
Sidewall spacer structure for memory cell
Grant 11,121,308 - Chang , et al. September 14, 2 | 2021-09-14 |
Method of forming memory cell
Grant 11,088,202 - Tseng , et al. August 10, 2 | 2021-08-10 |
Memory Device With Flat-top Bottom Electrodes And Methods For Forming The Same
App 20210217811 - Min; Chung-Chiang | 2021-07-15 |
Etch Stop Layer For Memory Device Formation
App 20210134668 - Huang; Sheng-Huang ; et al. | 2021-05-06 |
Sidewall Spacer Structure For Memory Cell
App 20210111333 - Chang; Yao-Wen ; et al. | 2021-04-15 |
Method Of Forming Memory Cell
App 20210091139 - Tseng; Yuan-Tai ; et al. | 2021-03-25 |
Method of manufacturing capacitor structure
Grant 10,872,895 - Yang , et al. December 22, 2 | 2020-12-22 |
Trench Formation Scheme For Programmable Metallization Cell To Prevent Metal Redeposit
App 20200357851 - Sung; Fu-Ting ; et al. | 2020-11-12 |
Flash memory structure
Grant 10,825,825 - Sung , et al. November 3, 2 | 2020-11-03 |
Semiconductor Structure And Method Of Manufacturing The Same
App 20200251649 - Kind Code | 2020-08-06 |
Semiconductor structure and method of manufacturing the same
Grant 10,720,568 - Sung , et al. | 2020-07-21 |
Flash Memory Structure
App 20190333926 - SUNG; Fu-Ting ; et al. | 2019-10-31 |
Semiconductor structure and method of manufacturing the same
Grant 10,454,021 - Sung , et al. Oc | 2019-10-22 |
Method for forming flash memory structure
Grant 10,355,011 - Sung , et al. July 16, 2 | 2019-07-16 |
Method to control the common drain of a pair of control gates and to improve inter-layer dielectric (ILD) filling between the control gates
Grant 10,276,584 - Min , et al. | 2019-04-30 |
Semiconductor Structure And Method Of Manufacturing The Same
App 20180351081 - SUNG; Fu-Ting ; et al. | 2018-12-06 |
Method For Forming Flash Memory Structure
App 20180122820 - SUNG; Fu-Ting ; et al. | 2018-05-03 |
Method for forming flash memory structure
Grant 9,859,295 - Sung , et al. January 2, 2 | 2018-01-02 |
Method for forming semiconductor device structure
Grant 9,799,665 - Wu , et al. October 24, 2 | 2017-10-24 |
Discrete storage element formation for thin-film storage device
Grant 9,786,674 - Min , et al. October 10, 2 | 2017-10-10 |
Method Of Manufacturing Capacitor Structure
App 20170287915 - YANG; Tsung-Hsueh ; et al. | 2017-10-05 |
Method for forming semiconductor device structure
App 20170256553 - WU; Chang-Ming ; et al. | 2017-09-07 |
Semiconductor Structure And Method Of Manufacturing The Same
App 20170222128 - SUNG; FU-TING ; et al. | 2017-08-03 |
Capacitor structure and method of manufacturing the same
Grant 9,711,508 - Yang , et al. July 18, 2 | 2017-07-18 |
Semiconductor device structure and method for forming the same
Grant 9,673,204 - Wu , et al. June 6, 2 | 2017-06-06 |
Method For Forming Flash Memory Structure
App 20170148803 - SUNG; Fu-Ting ; et al. | 2017-05-25 |
Discrete Storage Element Formation For Thin-film Storage Device
App 20170141120 - Min; Chung-Chiang ; et al. | 2017-05-18 |
Method To Control The Common Drain Of A Pair Of Control Gates And To Improve Inter-layer Dielectric (ild) Filling Between The Control Gates
App 20170125434 - Min; Chung-Chiang ; et al. | 2017-05-04 |
Method to control the common drain of a pair of control gates and to improve inter-layer dielectric (ILD) filling between the control gates
Grant 9,570,457 - Min , et al. February 14, 2 | 2017-02-14 |
Flash memory structure
Grant 9,564,448 - Sung , et al. February 7, 2 | 2017-02-07 |
Self-aligned split gate flash memory
Grant 9,536,969 - Yang , et al. January 3, 2 | 2017-01-03 |
Capacitor Structure And Method Of Manufacturing The Same
App 20160254266 - YANG; Tsung-Hsueh ; et al. | 2016-09-01 |
Semiconductor Device Structure And Method For Forming The Same
App 20160190268 - WU; Chang-Ming ; et al. | 2016-06-30 |
Self-Aligned Split Gate Flash Memory
App 20160086965 - Yang; Tsung-Hsueh ; et al. | 2016-03-24 |
Method to Control the Common Drain of a Pair of Control Gates and to Improve Inter-Layer Dielectric (ILD) Filling Between the Control Gates
App 20160064401 - Min; Chung-Chiang ; et al. | 2016-03-03 |
Flash Memory Structure
App 20150263015 - SUNG; Fu-Ting ; et al. | 2015-09-17 |
Flash memory structure and method of forming the same
Grant 9,048,316 - Sung , et al. June 2, 2 | 2015-06-02 |
Flash Memory Structure And Method Of Forming The Same
App 20150060974 - SUNG; Fu-Ting ; et al. | 2015-03-05 |
Method of fabricating MONOS semiconductor device
Grant 8,853,768 - Min , et al. October 7, 2 | 2014-10-07 |
Method Of Fabricating Monos Semiconductor Device
App 20140264553 - MIN; Chung-Chiang ; et al. | 2014-09-18 |
Method for forming a deep trench
Grant 8,524,093 - Min September 3, 2 | 2013-09-03 |
Method Of Manufacturing Supporting Structures For Stack Capacitor In Semiconductor Device
App 20100233881 - Min; Chung-Chiang ; et al. | 2010-09-16 |
Method for forming a deep trench
App 20090001050 - Min; Chung-Chiang | 2009-01-01 |
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