Min; Byoung-Gi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Min; Byoung-Gi.The latest application filed is for "charge dynamics effect for detection of voltage contrast defect and determination of shorting location".

Company Profile

0.5.3

Min; Byoung-Gi - Cohoes NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Charge dynamics effect for detection of voltage contrast defect and determination of shorting location Grant 9,735,064 - Lei , et al. August 15, 2	2017-08-15
Device characterization by time dependent charging dynamics Grant 9,601,392 - Lei , et al. March 21, 2	2017-03-21
Charge Dynamics Effect For Detection Of Voltage Contrast Defect And Determination Of Shorting Location App 20170032929 - LEI; Ming ; et al.	2017-02-02
Methods, apparatus and system for fabricating high performance finFET device Grant 9,543,441 - Lee , et al. January 10, 2	2017-01-10
Methods, Apparatus And System For Fabricating High Performance Finfet Device App 20160268435 - Lee; Ki Young ; et al.	2016-09-15
Multi-layer spacer used in finFET Grant 9,419,101 - Peng , et al. August 16, 2	2016-08-16
Nitride layer protection between PFET source/drain regions and dummy gate during source/drain etch Grant 9,419,139 - Wu , et al. August 16, 2	2016-08-16
Nitride Layer Protection Between Pfet Source/drain Regions And Dummy Gate During Source/drain Etch App 20160163859 - WU; Xusheng ; et al.	2016-06-09

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