| Patent | Date |
|---|
Control device of motor driven vehicle, control method of motor driven vehicle and non-transitory computer readable storage medium storing control program of motor driven vehicle
Grant 11,453,294 - Mihara September 27, 2 | 2022-09-27 |
Charging Control Device, Charging Control Method and Charging Control Program
App 20220173606 - Mihara; Teruyoshi | 2022-06-02 |
Joining Method
App 20220169575 - Mihara; Teruyoshi | 2022-06-02 |
Method for bonding solid electrolyte layer and electrodes, method for manufacturing fuel cell, and fuel cell
Grant 11,239,493 - Mihara , et al. February 1, 2 | 2022-02-01 |
Energy Management System
App 20200406776 - Mihara; Teruyoshi | 2020-12-31 |
Bonding Method
App 20200346433 - Mihara; Teruyoshi ; et al. | 2020-11-05 |
Bonding Method
App 20200346432 - Mihara; Teruyoshi ; et al. | 2020-11-05 |
Control Device of Motor Driven Vehicle, Control Method of Motor Driven Vehicle and Non-Transitory Computer Readable Storage Medium Storing Control Program of Motor Driven Vehicle
App 20200307389 - Mihara; Teruyoshi | 2020-10-01 |
Method For Bonding Solid Electrolyte Layer And Electrodes, Method For Manufacturing Fuel Cell, And Fuel Cell
App 20200036036 - MIHARA; Teruyoshi ; et al. | 2020-01-30 |
Photoconductive Ignition System
App 20080098973 - Niwa; Yusuke ; et al. | 2008-05-01 |
Insulated gate tunnel-injection device having heterojunction and method for manufacturing the same
Grant 7,217,950 - Kaneko , et al. May 15, 2 | 2007-05-15 |
High reverse voltage silicon carbide diode and method of manufacturing the same high reverse voltage silicon carbide diode
Grant 7,183,575 - Shimoida , et al. February 27, 2 | 2007-02-27 |
Insulated gate tunnel-injection device having heterojunction and method for manufacturing the same
App 20040079989 - Kaneko, Saichirou ; et al. | 2004-04-29 |
High reverse voltage silicon carbide diode and method of manufacturing the same high reverse voltage silicon carbide diode
App 20040031971 - Shimoida, Yoshio ; et al. | 2004-02-19 |
Groove-type semiconductor device
Grant 5,682,048 - Shinohara , et al. October 28, 1 | 1997-10-28 |
Lateral double-diffused mosfet
Grant 5,635,742 - Hoshi , et al. June 3, 1 | 1997-06-03 |
Target position detecting apparatus and method utilizing radar
Grant 5,629,704 - Throngnumchai , et al. May 13, 1 | 1997-05-13 |
MOSFET circuit with separate and common electrodes
Grant 5,406,104 - Hirota , et al. April 11, 1 | 1995-04-11 |
Lateral DMOS FET device with reduced on resistance
Grant 5,192,989 - Matsushita , et al. March 9, 1 | 1993-03-09 |
Semiconductor device
Grant 5,040,034 - Murakami , et al. August 13, 1 | 1991-08-13 |
Vertical power MOS transistor
Grant 4,972,240 - Murakami , et al. November 20, 1 | 1990-11-20 |
Conductivity modulated MOSFET
Grant 4,972,239 - Mihara November 20, 1 | 1990-11-20 |
Input protector device for semiconductor device
Grant 4,937,639 - Yao , et al. June 26, 1 | 1990-06-26 |
Vertical MOSFET having voltage regulator diode at shallower subsurface position
Grant 4,931,846 - Mihara June 5, 1 | 1990-06-05 |
CMOS device having Schottky diode for latch-up prevention
Grant 4,922,317 - Mihara May 1, 1 | 1990-05-01 |
CMOS having buried layer for carrier recombination
Grant 4,920,396 - Shinohara , et al. April 24, 1 | 1990-04-24 |
MOSFET device
Grant 4,893,158 - Mihara , et al. January 9, 1 | 1990-01-09 |
Integrated circuit device having vertical MOS provided with Zener diode
Grant 4,862,233 - Matsushita , et al. August 29, 1 | 1989-08-29 |
Accelerometer
Grant 4,836,025 - Mihara June 6, 1 | 1989-06-06 |
Vertical MOSFET having Schottky diode for latch-up prevention
Grant 4,823,172 - Mihara April 18, 1 | 1989-04-18 |
Semiconductor device having MOSFET and deep polycrystalline silicon region
Grant 4,805,008 - Yao , et al. February 14, 1 | 1989-02-14 |
Vertical MOSFET having a proof structure against puncture due to breakdown
Grant 4,803,532 - Mihara February 7, 1 | 1989-02-07 |
Semiconductor device including gate protection circuit with capacitor under input pad
Grant 4,777,518 - Mihara , et al. October 11, 1 | 1988-10-11 |
Power MOS FET with decreased resistance in the conducting state
Grant 4,697,201 - Mihara September 29, 1 | 1987-09-29 |
MOS transistor
Grant 4,686,551 - Mihara August 11, 1 | 1987-08-11 |
Pressure sensor
Grant 4,315,236 - Tominaga , et al. February 9, 1 | 1982-02-09 |
Pressure sensor
Grant 4,314,226 - Oguro , et al. February 2, 1 | 1982-02-02 |
Pressure sensor having semiconductor diaphragm
Grant 4,314,225 - Tominaga , et al. February 2, 1 | 1982-02-02 |
Pressure sensor
Grant 4,287,501 - Tominaga , et al. September 1, 1 | 1981-09-01 |
Pressure sensor
Grant 4,276,533 - Tominaga , et al. June 30, 1 | 1981-06-30 |
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