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Meyerson; Bernard Steele Patent Filings

Meyerson; Bernard Steele

Patent Applications and Registrations

Patent applications and USPTO patent grants for Meyerson; Bernard Steele.The latest application filed is for "epitaxial and polycrystalline growth of si1-x-ygexcy and si1-ycy alloy layers on si by uhv-cvd".

Company Profile
0.10.8
  • Meyerson; Bernard Steele - Yorktown Heights NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Epitaxial And Polycrystalline Growth Of Si1-x-ygexcy And Si1-ycy Alloy Layers On Si By Uhv-cvd
App 20090026459 - Chu; Jack Oon ;   et al.
2009-01-29
System and Computer Program Product for Dynamically Managing Power in MicroProcessor Chips According to Present Processing Demands
App 20080229128 - Heller; Thomas J. ;   et al.
2008-09-18
Method for dynamically managing power in microprocessor chips according to present processing demands
Grant 7,401,240 - Heller, Jr. , et al. July 15, 2
2008-07-15
Epitaxial And Polycrystalline Growth Of Si1-x-ygexcy And Si1-ycy Alloy Layers On Si By Uhv-cvd
App 20070122989 - Chu; Jack Oon ;   et al.
2007-05-31
Epitaxial and polycrystalline growth of Si.sub.1-x-yGe.sub.xC.sub.y and Si.sub.1-yC.sub.y alloy layers on Si by UHV-CVD
Grant 7,183,576 - Chu , et al. February 27, 2
2007-02-27
Ultrathin buried insulators in Si or Si-containing material
App 20060105559 - Chen; Tze-Chiang ;   et al.
2006-05-18
Method, system, and computer program product for dynamically managing power in microprocessor chips according to present processing demands
App 20050283679 - Heller, Thomas J. JR. ;   et al.
2005-12-22
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
Grant 6,908,866 - Chu , et al. June 21, 2
2005-06-21
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
App 20040161911 - Chu, Jack Oon ;   et al.
2004-08-19
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
App 20040161875 - Chu, Jack Oon ;   et al.
2004-08-19
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
Grant 6,750,119 - Chu , et al. June 15, 2
2004-06-15
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD
App 20020182423 - Chu, Jack Oon ;   et al.
2002-12-05
Method of making graded channel effect transistor
Grant 6,004,137 - December 21, 1
1999-12-21
Method and apparatus for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers
Grant 5,906,680 - Meyerson May 25, 1
1999-05-25
Graded channel field effect transistor
Grant 5,821,577 - Crabbe' , et al. October 13, 1
1998-10-13
Low defect density/arbitrary lattice constant heteroepitaxial layers
Grant 5,810,924 - Legoues , et al. September 22, 1
1998-09-22
Graded channel field effect transistor
Grant 5,777,364 - Crabbe , et al. July 7, 1
1998-07-07
Low defect density/arbitrary lattice constant heteroepitaxial layers
Grant 5,659,187 - Legoues , et al. August 19, 1
1997-08-19

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