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Patent applications and USPTO patent grants for Meng; James Lee Yong.The latest application filed is for "method to form elevated source/drain using poly spacer".
Patent | Date |
---|---|
Method to form a vertical transistor by first forming a gate/spacer stack, then using selective epitaxy to form source, drain and channel Grant 6,544,824 - Pradeep , et al. April 8, 2 | 2003-04-08 |
Method to form elevated source/drain using poly spacer App 20030022450 - Pan, Yang ;   et al. | 2003-01-30 |
Method to improve latchup by forming selective sloped staircase STI structure to use in the I/0 or latchup sensitive area App 20030017710 - Yang, Pan ;   et al. | 2003-01-23 |
Method to form a low parasitic capacitance pseudo-SOI CMOS device Grant 6,403,485 - Quek , et al. June 11, 2 | 2002-06-11 |
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