Melnik; Yuri V.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Melnik; Yuri V..The latest application filed is for "method and apparatus for fabricating crack-free group iii nitride semiconductor materials".

Company Profile

0.22.26

Melnik; Yuri V. - Rockville MD
Melnik; Yuri V. - St. Petersburg RU
Melnik; Yuri V. - St. Petersberg RU

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Bulk GaN and AlGaN single crystals Grant 8,372,199 - Melnik , et al. February 12, 2	2013-02-12
Method And Apparatus For Fabricating Crack-free Group Iii Nitride Semiconductor Materials App 20120076968 - Dmitriev; Vladimir A. ; et al.	2012-03-29
Bulk GaN and AlGaN single crystals Grant 8,092,596 - Melnik , et al. January 10, 2	2012-01-10
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials Grant 8,092,597 - Dmitriev , et al. January 10, 2	2012-01-10
Method And Apparatus For Fabricating Crack-free Group Iii Nitride Semiconductor Materials App 20110114015 - Dmitriev; Vladimir A. ; et al.	2011-05-19
Reactor for extended duration growth of gallium containing single crystals Grant 7,611,586 - Melnik , et al. November 3, 2	2009-11-03
Method for achieving low defect density AlGaN single crystal boules Grant 7,556,688 - Melnik , et al. July 7, 2	2009-07-07
BULK GaN AND AlGaN SINGLE CRYSTALS App 20090148984 - MELNIK; Yuri V. ; et al.	2009-06-11
Method And Apparatus For Fabricating Crack-free Group Iii Nitride Semiconductor Materials App 20090092815 - Dmitriev; Vladimir A. ; et al.	2009-04-09
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials Grant 7,501,023 - Dmitriev , et al. March 10, 2	2009-03-10
BULK GaN AND AlGaN SINGLE CRYSTALS App 20080257256 - MELNIK; Yuri V. ; et al.	2008-10-23
Reactor For Extended Duration Growth Of Gallium Containing Single Crystals App 20080022926 - Melnik; Yuri V. ; et al.	2008-01-31
Reactor for extended duration growth of gallium containing single crystals Grant 7,279,047 - Melnik , et al. October 9, 2	2007-10-09
Method and apparatus for fabricating crack-free group III nitride semiconductor materials App 20060280668 - Dmitriev; Vladimir A. ; et al.	2006-12-14
Bulk GaN and AIGaN single crystals App 20050244997 - Melnik, Yuri V. ; et al.	2005-11-03
Manufacturing methods for semiconductor devices with multiple III-V material layers Grant 6,955,719 - Dmitriev , et al. October 18, 2	2005-10-18
Method for achieving low defect density AlGaN single crystal boules App 20050212001 - Melnik, Yuri V. ; et al.	2005-09-29
Bulk GaN and ALGaN single crystals Grant 6,936,357 - Melnik , et al. August 30, 2	2005-08-30
Bulk GaN and AlGaN single crystals App 20050164044 - Melnik, Yuri V. ; et al.	2005-07-28
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials App 20050142391 - Dmitriev, Vladimir A. ; et al.	2005-06-30
Reactor for extended duration growth of gallium containing single crystals App 20050056222 - Melnik, Yuri V. ; et al.	2005-03-17
III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer Grant 6,849,862 - Nikolaev , et al. February 1, 2	2005-02-01
Manufacturing methods for semiconductor devices with multiple III-V material layers App 20040137657 - Dmitriev, Vladimir A. ; et al.	2004-07-15
III-V compound semiconductor device with an AIxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer App 20040026704 - Nikolaev, Audrey E. ; et al.	2004-02-12
Bulk GaN and AlGaN single crystals App 20030226496 - Melnik, Yuri V. ; et al.	2003-12-11
Reactor For Extended Duration Growth Of Gallium Containing Single Crystals App 20030221619 - Melnik, Yuri V. ; et al.	2003-12-04
Reactor for extended duration growth of gallium containing single crystals Grant 6,656,285 - Melnik , et al. December 2, 2	2003-12-02
Method For Achieving Low Defect Density Aigan Single Crystal Boules App 20030205193 - Melnik, Yuri V. ; et al.	2003-11-06
Method for achieving low defect density GaN single crystal boules Grant 6,616,757 - Melnik , et al. September 9, 2	2003-09-09
Method for fabricating bulk GaN single crystals Grant 6,613,143 - Melnik , et al. September 2, 2	2003-09-02
Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques Grant 6,599,133 - Nikolaev , et al. July 29, 2	2003-07-29
Method for fabricating bulk AlGaN single crystals Grant 6,576,054 - Melnik , et al. June 10, 2	2003-06-10
P-n heterojunction-based structures utilizing HVPE grown III-V compound layers Grant 6,559,467 - Nikolaev , et al. May 6, 2	2003-05-06
Method for growing p-type III-V compound material utilizing HVPE techniques Grant 6,555,452 - Nikolaev , et al. April 29, 2	2003-04-29
III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer Grant 6,479,839 - Nikolaev , et al. November 12, 2	2002-11-12
P-N homojunction-based structures utilizing HVPE growth III-V compound layers Grant 6,476,420 - Nikolaev , et al. November 5, 2	2002-11-05
Method for growing p-n homojunction-based structures utilizing HVPE techniques Grant 6,472,300 - Nikolaev , et al. October 29, 2	2002-10-29
P-n heterojunction-based structures utilizing HVPE grown III-V compound layers App 20020053679 - Nikolaev, Audrey E. ; et al.	2002-05-09
P-N homojunction-based structures utilizing HVPE grown III-V compound layers App 20020047127 - Nikolaev, Audrey E. ; et al.	2002-04-25
P-N junction-based structures utilizing HVPE grown III-V compound layers App 20020047135 - Nikolaev, Audrey E. ; et al.	2002-04-25
Method for growing p-n homojunction-based structures utilizing HVPE techniques App 20020039806 - Nikolaev, Audrey E. ; et al.	2002-04-04
III-V compounds semiconductor device with an AIxByInzGa1-x-y-zN non continuous quantum dot layer App 20020030192 - Nikolaev, Audrey E. ; et al.	2002-03-14
Method for growing p-type III-V compound material utilizing HVPE techniques App 20020028565 - Nikolaev, Audrey E. ; et al.	2002-03-07
Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques App 20020025661 - Nikolaev, Audrey E. ; et al.	2002-02-28
Method for growing p-n heterojunction-based structures utilizing HVPE techniques App 20020022286 - Nikolaev, Audrey E. ; et al.	2002-02-21
III-V compound semiconductor device with an InGaN1-x-yPxASy non-continuous quantum dot layer App 20020017650 - Nikolaev, Audrey E. ; et al.	2002-02-14
Process for producing III-V nitride pn junctions and p-i-n junctions Grant 6,218,269 - Nikolaev , et al. April 17, 2	2001-04-17

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