| Patent | Date |
|---|
Heat removal element with thermal expansion coefficient mismatch
Grant 10,551,132 - Schlottig , et al. Fe | 2020-02-04 |
Heat Removal Element With Thermal Expansion Coefficient Mismatch
App 20190162484 - Schlottig; Gerd ; et al. | 2019-05-30 |
Compliant Heat Sink
App 20180374771 - Meijer; Gerhard I. ; et al. | 2018-12-27 |
Compliant heat sink
Grant 10,157,814 - Meijer , et al. Dec | 2018-12-18 |
Heat exchangers for cooling integrated circuits
Grant 9,655,287 - Babcock , et al. May 16, 2 | 2017-05-16 |
Air-cooled heatsink for cooling integrated circuits
Grant 9,609,785 - Babcock , et al. March 28, 2 | 2017-03-28 |
Liquid-cooled memory system having one cooling pipe per pair of DIMMs
Grant 8,659,897 - Meijer , et al. February 25, 2 | 2014-02-25 |
Non-volatile programmable optical element employing F-centers
Grant 8,054,669 - Meijer , et al. November 8, 2 | 2011-11-08 |
Controlling Coolant Flow To Multiple Cooling Units In A Computer System
App 20110265982 - Jansen; Bernhard ; et al. | 2011-11-03 |
Programmable-resistance memory cell
Grant 7,834,339 - Bednorz , et al. November 16, 2 | 2010-11-16 |
Simultaneous conditioning of a plurality of memory cells through series resistors
Grant 7,834,384 - Furukawa , et al. November 16, 2 | 2010-11-16 |
Non-volatile Programmable Optical Element Employing F-centers
App 20100039848 - Meijer; Gerhard I. ; et al. | 2010-02-18 |
Non-volatile programmable optical element with absorption coefficient modulation
Grant 7,580,596 - Meijer , et al. August 25, 2 | 2009-08-25 |
Method To Enhance Performance Of Complex Metal Oxide Programmable Memory
App 20090186443 - Joseph; Eric A. ; et al. | 2009-07-23 |
Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
Grant 7,541,608 - Furukawa , et al. June 2, 2 | 2009-06-02 |
Field Effect Device with a Channel with a Switchable Conductivity
App 20080251777 - Bednorz; Georg J. ; et al. | 2008-10-16 |
Simultaneous Conditioning of a Plurality of Memory Cells Through Series Resistors
App 20080185652 - Furukawa; Toshijaru ; et al. | 2008-08-07 |
Programmable-resistance Memory Cell
App 20080142925 - Bednorz; Johannes G. ; et al. | 2008-06-19 |
Memory Device And Mehtod Of Manufacturing The Device By Simulataneously Conditioning Transition Metal Oxide Layers In A Plurality Of Memory Cells
App 20080131995 - Furukawa; Toshijaru ; et al. | 2008-06-05 |
Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
Grant 7,378,678 - Furukawa , et al. May 27, 2 | 2008-05-27 |
Memory Device And Method Of Manufacturing The Device By Simultaneously Conditioning Transition Metal Oxide Layers In A Plurality Of Memory Cells
App 20070212810 - Furukawa; Toshijaru ; et al. | 2007-09-13 |
Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
Grant 7,256,415 - Furukawa , et al. August 14, 2 | 2007-08-14 |
Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
App 20060267086 - Furukawa; Toshijaru ; et al. | 2006-11-30 |
Field effect device with a channel with a switchable conductivity
Grant 7,130,212 - Bednorz , et al. October 31, 2 | 2006-10-31 |
Switchable capacitance and nonvolatile memory device using the same
Grant 6,990,008 - Bednorz , et al. January 24, 2 | 2006-01-24 |
Device with switchable capacitance
App 20050111256 - Bednorz, Georg J. ; et al. | 2005-05-26 |
Field effect device with a channel with a switchable conductivity
App 20050111252 - Bednorz, Georg J. ; et al. | 2005-05-26 |
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