MegaMOS Corporation

Patent Applications and Registrations

Patent applications and USPTO patent grants for MegaMOS Corporation.The latest application filed is for "power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source mask".

Company Profile

0.12.0

MegaMOS Corporation - San Jose CA
MegaMOS Corp. - San Jose CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Power transistor cells provided with reliable trenched source contacts connected to narrower source manufactured without a source mask Grant 6,281,547 - So , et al. August 28, 2	2001-08-28
Cost savings for manufacturing planar MOSFET devices achieved by implementing an improved device structure and fabrication process eliminating passivation layer and/or field plate Grant 6,104,060 - Hshieh , et al. August 15, 2	2000-08-15
Semiconductor device fabrication with reduced masking steps Grant 6,046,078 - So , et al. April 4, 2	2000-04-04
Punch-through prevention in trenched DMOS with poly-silicon layer covering trench corners Grant 5,986,304 - Hshieh , et al. November 16, 1	1999-11-16
Method for device ruggedness improvement and on-resistance reduction for power MOSFET achieved by novel source contact structure Grant 5,930,630 - Hshieh , et al. July 27, 1	1999-07-27
Power MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savings Grant 5,923,065 - So , et al. July 13, 1	1999-07-13
Self-aligned and process-adjusted high density power transistor with gate sidewalls provided with punch through prevention and reduced JFET resistance Grant 5,907,169 - Hshieh , et al. May 25, 1	1999-05-25
MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches Grant 5,895,951 - So , et al. April 20, 1	1999-04-20
Edge wrap-around protective extension for covering and protecting edges of thick oxide layer Grant 5,883,410 - So , et al. March 16, 1	1999-03-16
Structure to provide effective channel-stop in termination areas for trenched power transistors Grant 5,877,528 - So March 2, 1	1999-03-02
Mosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggedness Grant 5,877,529 - So , et al. March 2, 1	1999-03-02
Cell topology for power transistors with increased packing density Grant 5,763,914 - Hshieh , et al. June 9, 1	1998-06-09

Company Registrations

SEC

0001039437

MEGAMOS CORP

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