McQuaid; Seamus A.

Patent Applications and Registrations

Patent applications and USPTO patent grants for McQuaid; Seamus A..The latest application filed is for "process for forming low defect density, ideal oxygen precipitating silicon".

Company Profile

0.6.9

McQuaid; Seamus A. - Vitoria ES
McQuaid; Seamus A. - St. Louis MO
McQuaid, Seamus A. - Victoria ES

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Process for forming low defect density, ideal oxygen precipitating silicon Grant 7,442,253 - Falster , et al. October 28, 2	2008-10-28
Process For Forming Low Defect Density, Ideal Oxygen Precipitating Silicon App 20070224783 - Falster; Robert J. ; et al.	2007-09-27
Low defect density, ideal oxygen precipitating silicon Grant 7,229,693 - Falster , et al. June 12, 2	2007-06-12
Vacancy-dominated, defect-free silicon App 20050238905 - Falster, Robert J. ; et al.	2005-10-27
Low defect density, ideal oxygen precipitating silicon App 20050170610 - Falster, Robert J. ; et al.	2005-08-04
Process for producing low defect density, ideal oxygen precipitating silicon Grant 6,896,728 - Falster , et al. May 24, 2	2005-05-24
Vacancy, dominsated, defect-free silicon Grant 6,840,997 - Falster , et al. January 11, 2	2005-01-11
Process for producing low defect density silicon App 20040089224 - Falster, Robert J. ; et al.	2004-05-13
Process for producing low defect density, ideal oxygen precipitating silicon App 20040025782 - Falster, Robert J. ; et al.	2004-02-12
Low defect density epitaxial wafer and a process for the preparation thereof Grant 6,632,278 - Falster , et al. October 14, 2	2003-10-14
Vacancy, dominated, defect-free silicon App 20030051657 - Falster, Robert J. ; et al.	2003-03-20
Low Defect Density Epitaxial Wafer And A Process For The Preparation Thereof App 20020170485 - Falster, Robert J. ; et al.	2002-11-21
Vacancy, dominsated, defect-free silicon App 20020078880 - Falster, Robert J. ; et al.	2002-06-27
Low defect density, self-interstitial dominated silicon App 20010025597 - Falster, Robert J. ; et al.	2001-10-04
Low defect density, ideal oxygen precipitating silicon Grant 6,190,631 - Falster , et al. February 20, 2	2001-02-20

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