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Patent applications and USPTO patent grants for McMullan; Russell Carlton.The latest application filed is for "mos transistor structure and method of forming the structure with vertically and horizontally-elongated metal contacts".
Patent | Date |
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Embedded tungsten resistor Grant 10,461,075 - McMullan , et al. Oc | 2019-10-29 |
Embedded tungsten resistor Grant 9,985,018 - McMullan , et al. May 29, 2 | 2018-05-29 |
MOS transistor structure and method of forming the structure with vertically and horizontally-elongated metal contacts Grant 9,966,373 - McMullan , et al. May 8, 2 | 2018-05-08 |
Mos Transistor Structure And Method Of Forming The Structure With Vertically And Horizontally-elongated Metal Contacts App 20170133366 - McMullan; Russell Carlton ;   et al. | 2017-05-11 |
Efficient buried oxide layer interconnect scheme Grant 9,589,983 - McMullan March 7, 2 | 2017-03-07 |
MOS transistor structure and method of forming the structure with vertically and horizontally-elongated metal contacts Grant 9,583,609 - McMullan , et al. February 28, 2 | 2017-02-28 |
Efficient Buried Oxide Layer Interconnect Scheme App 20160284731 - McMullan; Russell Carlton | 2016-09-29 |
Efficient buried oxide layer interconnect scheme Grant 9,385,140 - McMullan July 5, 2 | 2016-07-05 |
Embedded Tungsten Resistor App 20160071839 - McMullan; Russell Carlton ;   et al. | 2016-03-10 |
Embedded Tungsten Resistor App 20160071838 - McMullan; Russell Carlton ;   et al. | 2016-03-10 |
Embedded tungsten resistor Grant 9,184,226 - McMullan , et al. November 10, 2 | 2015-11-10 |
CMOS process to improve SRAM yield Grant 9,093,315 - Yu , et al. July 28, 2 | 2015-07-28 |
Complementary stress memorization technique layer method Grant 8,962,419 - McMullan , et al. February 24, 2 | 2015-02-24 |
Complementary Stress Memorization Technique Layer Method App 20150011061 - McMULLAN; Russell Carlton ;   et al. | 2015-01-08 |
CMOS Process To Improve SRAM Yield App 20140346609 - Yu; Shaofeng ;   et al. | 2014-11-27 |
Complementary stress memorization technique layer method Grant 8,871,587 - McMullan , et al. October 28, 2 | 2014-10-28 |
MOS Transistor Structure and Method of Forming the Structure with Vertically and Horizontally-Elongated Metal Contacts App 20140284725 - McMullan; Russell Carlton ;   et al. | 2014-09-25 |
CMOS process to improve SRAM yield Grant 8,603,875 - Yu , et al. December 10, 2 | 2013-12-10 |
Embedded Tungsten Resistor App 20130207221 - McMullan; Russell Carlton ;   et al. | 2013-08-15 |
Cmos Process To Improve Sram Yield App 20120104510 - Yu; Shaofeng ;   et al. | 2012-05-03 |
Complementary Stress Memorization Technique Layer Method App 20100015766 - McMULLAN; Russell Carlton ;   et al. | 2010-01-21 |
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