McKee; Benjamin P.

Patent Applications and Registrations

Patent applications and USPTO patent grants for McKee; Benjamin P..The latest application filed is for "polycrystalline silicon efuse and resistor fabrication in a metal replacement gate process".

Company Profile

0.10.13

McKee; Benjamin P. - Richardson TX
McKee; Benjamin P - Richardson TX US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates Grant 9,123,570 - Pinto , et al. September 1, 2	2015-09-01
Polycrystalline Silicon Efuse And Resistor Fabrication In A Metal Replacement Gate Process App 20140011333 - McKee; Benjamin P. ; et al.	2014-01-09
Integration Scheme For Changing Crystal Orientation In Hybrid Orientation Technology (hot) Using Direct Silicon Bonded (dsb) Substrates App 20130292780 - PINTO; Angelo ; et al.	2013-11-07
Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates Grant 8,558,318 - Pinto , et al. October 15, 2	2013-10-15
Integration Scheme For Changing Crystal Orientation In Hybrid Orientation Technology (hot) Using Direct Silicon Bonded (dsb) Substrates App 20110108893 - Pinto; Angelo ; et al.	2011-05-12
Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates Grant 7,892,908 - Pinto , et al. February 22, 2	2011-02-22
Methods for transistor formation using selective gate implantation Grant 7,572,693 - Johnson , et al. August 11, 2	2009-08-11
Integration Scheme For Changing Crystal Orientation In Hybrid Orientation Technology (hot) Using Direct Silicon Bonded (dsb) Substrates App 20090159933 - Pinto; Angelo ; et al.	2009-06-25
Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistors Grant 7,229,871 - Yu , et al. June 12, 2	2007-06-12
Integrated Circuit Containing Polysilicon Gate Transistors And Fully Silicidized Metal Gate Transistors App 20070052034 - Yu; Shaofeng ; et al.	2007-03-08
Integrated Circuit Containing Polysilicon Gate Transistors And Fully Silicidized Metal Gate Transistors App 20070042535 - Yu; Shaofeng ; et al.	2007-02-22
Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistors Grant 7,148,097 - Yu , et al. December 12, 2	2006-12-12
Methods for Transistor Formation Using Selective Gate Implantation App 20060270140 - Johnson; F. Scott ; et al.	2006-11-30
Methods for Transistor Formation Using Selective Gate Implantation App 20060270139 - Johnson; F. Scott ; et al.	2006-11-30
Integrated circuit containing polysilicon gate transistors and fully silicidized metal gate transistors App 20060199324 - Yu; Shaofeng ; et al.	2006-09-07
Methods for transistors formation using selective gate implantation Grant 7,098,098 - Johnson , et al. August 29, 2	2006-08-29
High capacitive density stacked decoupling capacitor structure Grant 6,969,880 - Burke , et al. November 29, 2	2005-11-29
High capacitive density stacked decoupling capacitor structure App 20050064673 - Burke, Edmund ; et al.	2005-03-24
Methods for transistor gate formation using gate sidewall implantation Grant 6,682,994 - Johnson , et al. January 27, 2	2004-01-27
Methods for transistors formation using selective gate implantation App 20030194849 - Johnson, F. Scott ; et al.	2003-10-16
Methods for transistor gate formation using gate sidewall implantation App 20030194851 - Johnson, F. Scott ; et al.	2003-10-16

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