MCCLURE; Elisabeth Lynne
Patent Applications and Registrations
Patent applications and USPTO patent grants for MCCLURE; Elisabeth Lynne.The latest application filed is for "nitrogen-enabled high growth rates in hydride vapor phase epitaxy".
- MCCLURE; Elisabeth Lynne - Lakewood CO
| Patent | Date |
|---|---|
| Nitrogen-enabled High Growth Rates In Hydride Vapor Phase Epitaxy App 20200407873 - MCCLURE; Elisabeth Lynne ; et al. | 2020-12-31 |
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