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name:-0.044528961181641
name:-0.010436058044434
name:-0.0013320446014404
McCarthy; Lee Patent Filings

McCarthy; Lee

Patent Applications and Registrations

Patent applications and USPTO patent grants for McCarthy; Lee.The latest application filed is for "high voltage iii-nitride semiconductor devices".

Company Profile
0.8.10
  • McCarthy; Lee - Santa Barbara CA
  • McCarthy, Lee - Chapel Hill NC
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
High voltage III-nitride semiconductor devices
Grant 9,293,561 - Mishra , et al. March 22, 2
2016-03-22
III-N device structures having a non-insulating substrate
Grant 9,257,547 - Fichtenbaum , et al. February 9, 2
2016-02-09
Electrolysis transistor
Grant 9,096,939 - Mishra , et al. August 4, 2
2015-08-04
High Voltage Iii-nitride Semiconductor Devices
App 20140342512 - Mishra; Umesh ;   et al.
2014-11-20
High voltage III-nitride semiconductor devices
Grant 8,742,459 - Mishra , et al. June 3, 2
2014-06-03
Compact electric appliance for providing gas for combustion
App 20130140189 - Mishra; Umesh ;   et al.
2013-06-06
Iii-n Device Structures Having A Non-insulating Substrate
App 20130062621 - Fichtenbaum; Nicholas ;   et al.
2013-03-14
High Voltage III-Nitride Semiconductor Devices
App 20100289067 - Mishra; Umesh ;   et al.
2010-11-18
Compact electric appliance for providing gas for combustion
App 20090145771 - Mishra; Umesh ;   et al.
2009-06-11
Compact electric appliance providing hydrogen injection for improved performance of internal combustion engines
App 20090134041 - Mishra; Umesh ;   et al.
2009-05-28
Electrolysis transistor
App 20080296173 - Mishra; Umesh ;   et al.
2008-12-04
Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications
Grant 7,344,958 - Murai , et al. March 18, 2
2008-03-18
Method for wafer bonding (Al, In, Ga)N and Zn(S, Se) for optoelectronic applications
App 20060009006 - Murai; Akihiko ;   et al.
2006-01-12
Group III nitride based FETs and hemts with reduced trapping and method for producing the same
App 20010023964 - Wu, Yifeng ;   et al.
2001-09-27

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