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Patent applications and USPTO patent grants for Mayol; Ignasi Cortes.The latest application filed is for "method of forming a semiconductor device".
Patent | Date |
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Thin body field effect transistor including a counter-doped channel area and a method of forming the same Grant 10,283,642 - Zaka , et al. | 2019-05-07 |
Capacitive structure in a semiconductor device having reduced capacitance variability Grant 10,283,584 - Zaka , et al. | 2019-05-07 |
Method of forming a semiconductor device Grant 10,170,614 - Schippel , et al. J | 2019-01-01 |
Resistor structure with high resistance based on very thin semiconductor layer Grant 10,121,846 - Zaka , et al. November 6, 2 | 2018-11-06 |
Method Of Forming A Semiconductor Device App 20180254343 - Schippel; Christian ;   et al. | 2018-09-06 |
Semiconductor device and method Grant 10,038,091 - Schippel , et al. July 31, 2 | 2018-07-31 |
Capacitive Structure In A Semiconductor Device Having Reduced Capacitance Variability App 20180090558 - Zaka; Alban ;   et al. | 2018-03-29 |
Semiconductor Device And Method App 20170317209 - Schippel; Christian ;   et al. | 2017-11-02 |
Enhanced HVPMOS Grant 8,729,629 - Toren , et al. May 20, 2 | 2014-05-20 |
Enhanced Hvpmos App 20120267717 - Toren; Willem-Jan ;   et al. | 2012-10-25 |
Enhanced HVPMOS Grant 8,217,452 - Toren , et al. July 10, 2 | 2012-07-10 |
Enhanced Hvpmos App 20120032262 - Toren; Willem-Jan ;   et al. | 2012-02-09 |
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