| Patent | Date |
|---|
Microwave assisted magnetic recording head with spin torque oscillator corner angle relationship, head gimbal assembly, and magnetic recording device
Grant 9,824,701 - Tang , et al. November 21, 2 | 2017-11-21 |
Microwave Assisted Magnetic Recording Head With Spin Torque Oscillator Corner Angle Relationship, Head Gimbal Assembly, And Magnetic Recording Device
App 20170309299 - TANG; Zhenyao ; et al. | 2017-10-26 |
Magnetoresistance effect element having layer containing Zn at the interface between magnetic layer and non-magnetic intermediate layer
Grant 8,970,995 - Chou , et al. March 3, 2 | 2015-03-03 |
Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and metal intermediate layer
Grant 8,593,766 - Tsuchiya , et al. November 26, 2 | 2013-11-26 |
Magneto-resistive effect element having spacer layer including gallium oxide layer with metal element
Grant 8,564,911 - Koike , et al. October 22, 2 | 2013-10-22 |
Magneto-resistive effect element having spacer layer containing gallium oxide, partially oxidized copper
Grant 8,498,083 - Koike , et al. July 30, 2 | 2013-07-30 |
Magneto-resistive effect element having spacer layer with thin central portion
Grant 8,441,763 - Chou , et al. May 14, 2 | 2013-05-14 |
Magneto-resistive effect element, magnetic head, magnetic head slider, head gimbal assembly and hard disk drive apparatus
Grant 8,432,645 - Matsuzawa , et al. April 30, 2 | 2013-04-30 |
Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and nonmagnetic layer
Grant 8,405,935 - Chou , et al. March 26, 2 | 2013-03-26 |
CPP-type magnetoresistive element including spacer layer
Grant 8,379,350 - Matsuzawa , et al. February 19, 2 | 2013-02-19 |
Magnetoresistive effect element in CPP-type structure and magnetic disk device
Grant 8,345,390 - Tsuchiya , et al. January 1, 2 | 2013-01-01 |
Magnetoresistive effect element in CPP-type structure and magnetic disk device
Grant 8,331,063 - Hara , et al. December 11, 2 | 2012-12-11 |
Magneto-resistive effect element provided with GaN spacer layer
Grant 8,274,764 - Hara , et al. September 25, 2 | 2012-09-25 |
Magneto-resistive Effect Element Having Spacer Layer Containing Gallium Oxide, Partially Oxidized Copper
App 20120237796 - KOIKE; Hayato ; et al. | 2012-09-20 |
Magneto-resistive Effect Element Having Spacer Layer With Thin Central Portion
App 20120214020 - CHOU; Tsutomu ; et al. | 2012-08-23 |
Magneto-resistive Effect Element Having Spacer Layer Including Gallium Oxide Layer With Metal Element
App 20120212860 - KOIKE; Hayato ; et al. | 2012-08-23 |
Magneto-resistive Effect Element Having Spacer Layer Including Main Spacer Layer Containing Gallium Oxide And Metal Intermediate Layer
App 20120212859 - TSUCHIYA; Yoshihiro ; et al. | 2012-08-23 |
Magneto-resistive Effect Element, Magnetic Head, Magnetic Head Slider, Head Gimbal Assembly And Hard Disk Drive Apparatus
App 20120196153 - MATSUZAWA; Hironobu ; et al. | 2012-08-02 |
Magneto-resistive Effect Element Having Spacer Layer Including Main Spacer Layer Containing Gallium Oxide And Nonmagnetic Layer
App 20120164484 - CHOU; Tsutomu ; et al. | 2012-06-28 |
Magnetoresistive effect element in CPP-type structure including ferromagnetic layer configured with CoFe system alloy and magnetic disk device therewith
Grant 8,194,364 - Hara , et al. June 5, 2 | 2012-06-05 |
Layered structure having FePt system magnetic layer and magnetoresistive effect element using the same
Grant 8,147,994 - Matsuzawa , et al. April 3, 2 | 2012-04-03 |
CPP-Type Magnetoresistive Element Including Spacer Layer
App 20120002330 - MATSUZAWA; Hironobu ; et al. | 2012-01-05 |
Fabrication process for magnetoresistive devices of the CPP type
Grant 8,029,853 - Matsuzawa , et al. October 4, 2 | 2011-10-04 |
Magnetoresistive device of the CPP type, and magnetic disk system
Grant 8,031,444 - Chou , et al. October 4, 2 | 2011-10-04 |
Magnetoresistive effect element in CPP-type structure and magnetic disk device
App 20110051295 - Hara; Shinji ; et al. | 2011-03-03 |
CPP type magnetoresistive device with biasing arrangement for ferromagnetic layers having respective magnetizations orthogonal to one another, and magnetic disk system using same
Grant 7,881,021 - Chou , et al. February 1, 2 | 2011-02-01 |
Magnetoresistive Effect Element In Cpp-type Structure And Magnetic Disk Device
App 20110007421 - Hara; Shinji ; et al. | 2011-01-13 |
Magneto-resistive effect element provided with GaN spacer layer
App 20100232066 - Hara; Shinji ; et al. | 2010-09-16 |
Magnetoresistance effect element having layer containing Zn at the interface between magnetic layer and non-magnetic intermediate layer
App 20100232073 - Chou; Tsutomu ; et al. | 2010-09-16 |
Magnetoresistive effect element in cpp-type structure and magnetic disk device
App 20100214701 - Tsuchiya; Yoshihiro ; et al. | 2010-08-26 |
Layered structure having FePt system magnetic layer and magnetoresistive effect element using the same
App 20100214696 - Matsuzawa; Hironobu ; et al. | 2010-08-26 |
Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layer including amorphous layer
App 20100149689 - Tsuchiya; Yoshihiro ; et al. | 2010-06-17 |
Fabrication process for magnetoresistive devices of the CPP type
App 20100124617 - Matsuzawa; Hironobu ; et al. | 2010-05-20 |
Magnetoresistive Device Of The Cpp Type, And Magnetic Disk System
App 20100097722 - Chou; Tsutomu ; et al. | 2010-04-22 |
Magneto-resistance Effect Element Provided With Current Limiting Layer Including Magnetic Material
App 20090303640 - Mizuno; Tomohito ; et al. | 2009-12-10 |
Magneto-resistive Effect Device Of The Cpp Type, And Magnetic Disk System
App 20090190270 - Chou; Tsutomu ; et al. | 2009-07-30 |
Cpp Magneto-resistive Element Provided With A Pair Of Magnetic Layers And Nicr Buffer Layer
App 20090128965 - MIZUNO; Tomohito ; et al. | 2009-05-21 |
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