Matsuyama; Isamu
Patent Applications and Registrations
Patent applications and USPTO patent grants for Matsuyama; Isamu.The latest application filed is for "semiconductor device fabricating method".
- Matsuyama; Isamu - Tokyo JP
- Matsuyama; Isamu - Toyko JP
- Matsuyama; Isamu - Kobe JP
| Patent | Date |
|---|---|
| Semiconductor device fabricating method including thermal oxidation of a substrate, forming a second oxide, and thermal processing a gate electrode Grant 7,994,035 - Matsuyama August 9, 2 | 2011-08-09 |
| Semiconductor device fabricating method App 20090227098 - Matsuyama; Isamu | 2009-09-10 |
| Metal semiconductor FET having doped A1GaAs layer between channel layer and A1GaAs buffer layer Grant 6,037,615 - Matsuyama , et al. March 14, 2 | 2000-03-14 |
| Water leakage monitoring system Grant 4,656,509 - Matsuyama , et al. April 7, 1 | 1987-04-07 |
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