Matsutera; Hisao

Patent Applications and Registrations

Patent applications and USPTO patent grants for Matsutera; Hisao.The latest application filed is for "magnetic random access memory".

Company Profile

0.9.6

Matsutera; Hisao - Tokyo JP
Matsutera; Hisao - Minato-ku JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer Grant 7,372,673 - Hayashi , et al. May 13, 2	2008-05-13
Magnetic random access memory Grant 7,126,201 - Matsutera , et al. October 24, 2	2006-10-24
Magnetic random access memory Grant 7,099,184 - Sugibayashi , et al. August 29, 2	2006-08-29
Magnetic random access memory, and production method therefor Grant 7,068,536 - Matsutera , et al. June 27, 2	2006-06-27
Magnetic random access memory App 20060098477 - Sugibayashi; Tadahiko ; et al.	2006-05-11
Magnetic random access memory App 20050242407 - Matsutera, Hisao ; et al.	2005-11-03
Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer App 20050219772 - Hayashi, Kazuhiko ; et al.	2005-10-06
Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer Grant 6,950,290 - Hayashi , et al. September 27, 2	2005-09-27
Magnetic random access memory, and production method therefor App 20050002229 - Matsutera, Hisao ; et al.	2005-01-06
Magneto-resistance effect type composite head and production method thereof Grant 6,639,766 - Nobuyuki , et al. October 28, 2	2003-10-28
Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer Grant 6,542,342 - Hayashi , et al. April 1, 2	2003-04-01
Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer App 20030035256 - Hayashi, Kazuhiko ; et al.	2003-02-20
Magneto-resistance effect type composite head and production method thereof App 20020027753 - Ishiwata, Nobuyuki ; et al.	2002-03-07
Magnetic tunnel junction elements and their fabrication method Grant 6,341,053 - Nakada , et al. January 22, 2	2002-01-22
Method of fabricating ferromagnetic tunnel junction device Grant 6,174,736 - Tsukamoto , et al. January 16, 2	2001-01-16

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