Matsuoka; Toshimasa

Patent Applications and Registrations

Patent applications and USPTO patent grants for Matsuoka; Toshimasa.The latest application filed is for "data protecting apparatus and data protecting method".

Company Profile

0.10.4

Matsuoka; Toshimasa - Saitama JP
Matsuoka; Toshimasa - Yao JP
Matsuoka, Toshimasa - Osaka JP
Matsuoka, Toshimasa - Yao-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Data protecting apparatus and data protecting method Grant 7,637,755 - Hondo , et al. December 29, 2	2009-12-29
Data Protecting Apparatus And Data Protecting Method App 20080320608 - HONDO; Asaya ; et al.	2008-12-25
Semiconductor device and method for fabricating the same Grant 6,927,463 - Iwata , et al. August 9, 2	2005-08-09
Semiconductor device having junction depths for reducing short channel effect App 20050045962 - Iwata, Hiroshi ; et al.	2005-03-03
Surface-channel metal-oxide semiconductor transistors, their complementary field-effect transistors and method of producing the same Grant 6,747,316 - Matsuoka , et al. June 8, 2	2004-06-08
Semiconductor device having junction depths for reducing short channel effect Grant 6,720,627 - Iwata , et al. April 13, 2	2004-04-13
Semiconductor device and method for fabricating the same App 20030230784 - Iwata, Hiroshi ; et al.	2003-12-18
Semiconductor device and method for fabricating the same Grant 6,573,577 - Iwata , et al. June 3, 2	2003-06-03
Surface-channel Metal-oxide Semiconductor Transistors, Their Complementary Field-effect Transistors And Method Of Producing The Same App 20020043689 - MATSUOKA, TOSHIMASA ; et al.	2002-04-18
Semiconductor device Grant 6,288,429 - Iwata , et al. September 11, 2	2001-09-11
Semiconductor device having junction depths for reducing short channel effect Grant 6,255,702 - Iwata , et al. July 3, 2	2001-07-03
Method of forming insulating film with few hydrogen atom inclusions Grant 5,976,918 - Matsuoka , et al. November 2, 1	1999-11-02
Method of forming gate dielectric films for MOSFETs without generation of natural oxide films Grant 5,926,741 - Matsuoka , et al. July 20, 1	1999-07-20
Method of forming semiconductor transistor devices Grant 5,391,508 - Matsuoka , et al. February 21, 1	1995-02-21

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