loadpatents
name:-0.0080568790435791
name:-0.017537832260132
name:-0.00042200088500977
Matsuo; Akinori Patent Filings

Matsuo; Akinori

Patent Applications and Registrations

Patent applications and USPTO patent grants for Matsuo; Akinori.The latest application filed is for "semiconductor integrated circuit device".

Company Profile
0.15.5
  • Matsuo; Akinori - Higashiyamato JP
  • Matsuo; Akinori - Tokyo JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor integrated circuit device
Grant 7,336,535 - Kuroda , et al. February 26, 2
2008-02-26
Semiconductor integrated circuit device
App 20070171692 - Kuroda; Kenichi ;   et al.
2007-07-26
Semiconductor integrated circuit device
Grant 7,212,425 - Kuroda , et al. May 1, 2
2007-05-01
Semiconductor integrated circuit device
Grant 7,002,830 - Kuroda , et al. February 21, 2
2006-02-21
Semiconductor integrated circuit device
App 20060018172 - Kuroda; Kenichi ;   et al.
2006-01-26
Semiconductor integrated circuit device
Grant 6,751,138 - Kuroda , et al. June 15, 2
2004-06-15
Semiconductor integrated circuit device
App 20040090838 - Kuroda, Kenichi ;   et al.
2004-05-13
Semiconductor integrated circuit device
App 20030095434 - Kuroda, Kenichi ;   et al.
2003-05-22
Semiconductor integrated circuit device
App 20020048204 - Kuroda, Kenichi ;   et al.
2002-04-25
Nonvolatile semiconductor memory device
Grant 5,994,732 - Ajika , et al. November 30, 1
1999-11-30
Nonvolatile semiconductor memory device having data line dedicated to data loading
Grant 5,896,317 - Ishii , et al. April 20, 1
1999-04-20
Nonvolatile semiconductor memory device having a plurality of blocks provided on a plurality of electrically isolated wells
Grant 5,847,995 - Kobayashi , et al. December 8, 1
1998-12-08
Nonvolatile memory device having buried data lines and floating gate electrode on buried data lines
Grant 5,747,849 - Kuroda , et al. May 5, 1
1998-05-05
Nonvolatile memory device having source and drain of memory cells integrally formed with data-source lines
Grant 5,548,146 - Kuroda , et al. August 20, 1
1996-08-20
Floating gate FET with hydrogen barrier shield
Grant 5,457,335 - Kuroda , et al. October 10, 1
1995-10-10
Semiconductor memory device having an automatically activated verify function capability
Grant 5,434,819 - Matsuo , et al. July 18, 1
1995-07-18
Semiconductor integrated circuit device and process for manufacturing the same
Grant 5,270,944 - Kuroda , et al. December 14, 1
1993-12-14
Method of fabricating a second semiconductor integrated circuit device from a first semiconductor integrated circuit device
Grant 5,182,719 - Kuroda , et al. January 26, 1
1993-01-26
Nonvolatile semiconductor memory device having redundant data lines and page mode programming
Grant 5,134,583 - Matsuo , et al. July 28, 1
1992-07-28
Semiconductor device with change-over circuit to access a memory area based upon internal or external signal
Grant 4,989,185 - Matsuo , et al. January 29, 1
1991-01-29

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