Matsukura; Fumihiro

Patent Applications and Registrations

Patent applications and USPTO patent grants for Matsukura; Fumihiro.The latest application filed is for "magnetoresistance effect element and magnetic memory".

Company Profile

6.17.21

Matsukura; Fumihiro - Sendai JP
MATSUKURA; Fumihiro - Sendai-shi JP
Matsukura; Fumihiro - Miyagi JP
Matsukura, Fumihiro - Sendai City JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Magnetoresistive element and magnetic memory Grant 10,804,457 - Ohno , et al. October 13, 2	2020-10-13
Magnetoresistance effect element and magnetic memory Grant 10,658,572 - Sato , et al.	2020-05-19
Magnetoresistive element and magnetic memory Grant 10,651,369 - Ohno , et al.	2020-05-12
Magnetoresistance effect element and magnetic memory Grant 10,263,180 - Sato , et al.	2019-04-16
Magnetoresistance Effect Element And Magnetic Memory App 20190074433 - SATO; Hideo ; et al.	2019-03-07
Magnetic Tunnel Junction Element And Magnetic Memory App 20190019944 - Sato; Hideo ; et al.	2019-01-17
Magnetoresistance effect element and magnetic memory Grant 10,164,174 - Sato , et al. Dec	2018-12-25
Control method for magnetoresistance effect element and control device for magnetoresistance effect element Grant 10,127,957 - Kanai , et al. November 13, 2	2018-11-13
Magnetoresistance Effect Element And Magnetic Memory App 20180175286 - SATO; Hideo ; et al.	2018-06-21
Magnetoresistance Effect Element And Magnetic Memory App 20170324030 - SATO; Hideo ; et al.	2017-11-09
Magnetoresistive Element And Magnetic Memory App 20170110654 - OHNO; Hideo ; et al.	2017-04-20
Magnetoresistance effect element and magnetic memory Grant 9,577,182 - Ikeda , et al. February 21, 2	2017-02-21
Magnetoresistive Element And Magnetic Memory App 20170025600 - OHNO; Hideo ; et al.	2017-01-26
Control Method For Magnetoresistance Effect Element And Control Device For Magnetoresistance Effect Element App 20160329086 - KANAI; Shun ; et al.	2016-11-10
Magnetoresistive element and magnetic memory Grant 9,450,177 - Ohno , et al. September 20, 2	2016-09-20
Magnetoresistance Effect Element And Magnetic Memory App 20160233416 - IKEDA; Shoji ; et al.	2016-08-11
Magnetoresistance effect element and magnetic memory Grant 9,202,545 - Sato , et al. December 1, 2	2015-12-01
Magnetoresistance effect element and magnetic memory Grant 9,135,973 - Ohno , et al. September 15, 2	2015-09-15
Magnetoresistance Effect Element And Magnetic Memory App 20150109853 - Sato; Hideo ; et al.	2015-04-23
Magnetoresistance effect element and magnetic memory Grant 8,917,541 - Ohno , et al. December 23, 2	2014-12-23
Magnetoresistance Effect Element and Magnetic Memory App 20140205862 - Ohno; Hideo ; et al.	2014-07-24
Magnetoresistance Effect Element And Magnetic Memory App 20130141966 - Ohno; Hideo ; et al.	2013-06-06
Magnetoresistance Effect Element And Magnetic Memory App 20130094284 - Ohno; Hideo ; et al.	2013-04-18
Magnetoresistive Element and Magnetic Memory App 20120320666 - Ohno; Hideo ; et al.	2012-12-20
Current injection magnetic domain wall moving element Grant 8,331,140 - Ohno , et al. December 11, 2	2012-12-11
Nonvolatile solid state magnetic memory and recording method thereof Grant 8,310,867 - Ohno , et al. November 13, 2	2012-11-13
Nonvolatile Solid State Magnetic Memory And Recording Method Thereof App 20100246252 - Ohno; Hideo ; et al.	2010-09-30
Current Injection Magnetic Domain Wall Moving Element App 20080137405 - Ohno; Hideo ; et al.	2008-06-12
Zinc blende type CrSb compound, method for fabricating the same, and multilayered structure Grant 6,861,342 - Ohno , et al. March 1, 2	2005-03-01
Method for recording in a nonvolatile solid-state magnetic memory App 20040085811 - Ohno, Hideo ; et al.	2004-05-06
Nonvolatile solid-state magnetic memory, method for controlling coercive force of nonvolatile solid-state magnetic memory, and method for recording in nonvolatile solid-state magnetic memory App 20040085827 - Ohno, Hideo ; et al.	2004-05-06
Zinc blende type CrSb compound, method for fabricating the same, and multilayered structure App 20030003704 - Ohno, Hideo ; et al.	2003-01-02
Method of generating spin-polarized conduction electron and semiconductor device App 20010031547 - Ohno, Hideo ; et al.	2001-10-18

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.