MATSUKAWA; Naohiro

Patent Applications and Registrations

Patent applications and USPTO patent grants for MATSUKAWA; Naohiro.The latest application filed is for "semiconductor device".

Company Profile

1.13.4

MATSUKAWA; Naohiro - Yokohama JP
Matsukawa; Naohiro - Yokohama-shi JP
Matsukawa; Naohiro - Kamakura JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor Device App 20200203529 - SUEYAMA; Takao ; et al.	2020-06-25
Memory system Grant 9,183,000 - Ichida , et al. November 10, 2	2015-11-10
Memory System App 20130227268 - ICHIDA; Makoto ; et al.	2013-08-29
Method of evaluating a semiconductor storage device Grant 8,400,833 - Matsukawa March 19, 2	2013-03-19
Method Of Evaluating A Semiconductor Storage Device App 20120081965 - MATSUKAWA; Naohiro	2012-04-05
Cell characteristic measuring circuit for a nonvolatile semiconductor memory device and cell characteristic measuring method Grant 5,650,961 - Himeno , et al. July 22, 1	1997-07-22
Nonvolatile semiconductor memory device having a small number of internal boosting circuits Grant 5,515,327 - Matsukawa , et al. May 7, 1	1996-05-07
Nonvolatile semiconductor memory circuit with high speed read-out Grant 5,350,938 - Matsukawa , et al. September 27, 1	1994-09-27
Nonvolatile semiconductor memory device Grant 5,172,196 - Matsukawa , et al. December 15, 1	1992-12-15
Reduced projection type step- and repeat-exposure apparatus Grant 4,845,530 - Matsukawa July 4, 1	1989-07-04
Method of manufacturing nonvolatile semiconductor memory device by forming additional impurity doped region under the floating gate Grant 4,642,881 - Matsukawa , et al. February 17, 1	1987-02-17
Method for producing a semiconductor device with a floating gate Grant 4,620,361 - Matsukawa , et al. November 4, 1	1986-11-04
Method of making high density dielectric isolated gate MOS transistor Grant 4,610,078 - Matsukawa , et al. September 9, 1	1986-09-09
Method of forming dielectric isolation of device regions Grant 4,419,142 - Matsukawa December 6, 1	1983-12-06

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