Matsui; Yuichi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Matsui; Yuichi.The latest application filed is for "semiconductor memory".

Company Profile

2.39.40

Matsui; Yuichi - Kawasaki JP
Matsui; Yuichi - Owariasahi JP
- Kawasaki JP
MATSUI; Yuichi - Owariasahi-shi JP
Matsui; Yuichi - Koganei JP
Matsui; Yuichi - Kogane JP
Matsui; Yuichi - Kokubunji JP
Matsui; Yuichi - Kobe JP
Matsui; Yuichi - Osaka JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor Memory App 20150214476 - Matsui; Yuichi ; et al.	2015-07-30
Semiconductor memory Grant 8,890,107 - Matsui , et al. November 18, 2	2014-11-18
Semiconductor memory Grant 8,866,120 - Matsui , et al. October 21, 2	2014-10-21
Semiconductor memory Grant 8,859,344 - Matsui , et al. October 14, 2	2014-10-14
Vehicle seat Grant 8,833,857 - Hara , et al. September 16, 2	2014-09-16
Semiconductor device Grant 08618523 -	2013-12-31
Semiconductor device Grant 8,618,523 - Takaura , et al. December 31, 2	2013-12-31
Semiconductor Memory App 20120241715 - MATSUI; YUICHI ; et al.	2012-09-27
Semiconductor Memory App 20120074377 - MATSUI; YUICHI ; et al.	2012-03-29
Semiconductor Memory App 20120077325 - MATSUI; YUICHI ; et al.	2012-03-29
Vehicle Seat App 20120025579 - ONO; Tatsuya ; et al.	2012-02-02
Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same Grant 8,106,441 - Akiyama , et al. January 31, 2	2012-01-31
Vehicle Seat App 20120019039 - HARA; Yoshiro ; et al.	2012-01-26
Semiconductor device with fluorine-containing interlayer dielectric film to prevent chalcogenide material layer from exfoliating from the interlayer dielectric film and process for producing the same Grant 8,044,489 - Matsui October 25, 2	2011-10-25
Semiconductor Storage Device And Manufacturing Method Thereof App 20110215288 - MATSUI; Yuichi ; et al.	2011-09-08
Semiconductor device with recording layer containing indium, germanium, antimony and tellurium Grant 8,000,126 - Morikawa , et al. August 16, 2	2011-08-16
Semiconductor Device App 20110049454 - Terao; Motoyasu ; et al.	2011-03-03
Semiconductor Device Having Plural Dram Memory Cells And A Logic Circuit And Method For Manufacturing The Same App 20100314676 - Akiyama; Satoru ; et al.	2010-12-16
Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same Grant 7,804,118 - Akiyama , et al. September 28, 2	2010-09-28
Capacitive electrode having semiconductor layers with an interface of separated grain boundaries Grant 7,800,153 - Matsui , et al. September 21, 2	2010-09-21
Semiconductor memory device Grant 7,728,376 - Matsui , et al. June 1, 2	2010-06-01
Semiconductor Device App 20100096613 - Morikawa; Takahiro ; et al.	2010-04-22
Semiconductor Device Having Plural Dram Memory Cells And A Logic Circuit And Method For Manufacturing The Same App 20100084698 - Akiyama; Satoru ; et al.	2010-04-08
Semiconductor device having plural DRAM memory cells and a logic circuit and method for manufacturing the same Grant 7,683,419 - Akiyama , et al. March 23, 2	2010-03-23
Semiconductor Memory App 20100044672 - Matsui; Yuichi ; et al.	2010-02-25
Semiconductor integrated circuit device and method of manufacturing the same Grant 7,667,218 - Yamamoto , et al. February 23, 2	2010-02-23
Manufacturing Method Of Semiconductor Memory Device App 20100015755 - Matsui; Yuichi ; et al.	2010-01-21
Semiconductor Devic App 20100012917 - Takaura; Norikatsu ; et al.	2010-01-21
Semiconductor and semiconductor manufacturing arrangements having a chalcogenide layer formed of columnar crystal grains perpendicular to a main substrate surface Grant 7,638,786 - Matsui , et al. December 29, 2	2009-12-29
Capacitive Electrode Having Semiconductor Layers With An Interface Of Separated Grain Boundaries App 20090085086 - Matsui; Yuichi ; et al.	2009-04-02
Capacitive electrode having semiconductor layers with an interface of separated grain boundaries Grant 7,511,327 - Matsui , et al. March 31, 2	2009-03-31
Semiconductor Device And Process For Producing The Same App 20090050871 - Matsui; Yuichi	2009-02-26
Semiconductor device having plural dram memory cells and a logic circuit and method for manufacturing the same App 20080265300 - Akiyama; Satoru ; et al.	2008-10-30
Semiconductor device having plural dram memory cells and a logic circuit Grant 7,408,218 - Akiyama , et al. August 5, 2	2008-08-05
Semiconductor device and method of fabrication Grant 7,364,965 - Tonomura , et al. April 29, 2	2008-04-29
Capacitive electrode having semiconductor layers with an interface of separated grain boundaries App 20080035979 - Matsui; Yuichi ; et al.	2008-02-14
Semiconductor memory device App 20070257295 - Miki; Hiroshi ; et al.	2007-11-08
Semiconductor memory device App 20070228427 - Matsui; Yuichi ; et al.	2007-10-04
Capacitive electrode having semiconductor layers with an interface of separated grain boundaries Grant 7,265,407 - Matsui , et al. September 4, 2	2007-09-04
Fabricating method of semiconductor integrated circuits Grant 7,259,058 - Shimamoto , et al. August 21, 2	2007-08-21
Semiconductor memory App 20070170413 - Matsui; Yuichi ; et al.	2007-07-26
Semiconductor storage device and manufacturing method thereof App 20060266992 - Matsui; Yuichi ; et al.	2006-11-30
Semiconductor device and manufacturing method thereof Grant 7,112,819 - Matsui September 26, 2	2006-09-26
Semiconductor integrated circuit device and method of manufacturing the same App 20060113520 - Yamamoto; Naoki ; et al.	2006-06-01
Semiconductor device and method of manufacturing the same App 20060105556 - Matsui; Yuichi ; et al.	2006-05-18
Capacitive electrode having semiconductor layers with an interface of separated grain boundaries App 20060027851 - Matsui; Yuichi ; et al.	2006-02-09
Fabrication method for semiconductor integrated devices Grant 6,992,022 - Shimamoto , et al. January 31, 2	2006-01-31
Method for manufacturing a ruthenium film for a semiconductor device Grant 6,989,304 - Matsui , et al. January 24, 2	2006-01-24
Method of making a memory structure having a multilayered contact and a storage capacitor with a composite dielectric layer of crystalized niobium pentoxide and tantalum pentoxide films Grant 6,955,959 - Matsui , et al. October 18, 2	2005-10-18
Semiconductor device and method of fabrication App 20050142742 - Tonomura, Osamu ; et al.	2005-06-30
Semiconductor device and manufacturing method thereof App 20050001212 - Matsui, Yuichi	2005-01-06
Semiconductor device Grant 6,833,577 - Matsui , et al. December 21, 2	2004-12-21
Semiconductor device and method for manufacturing the same App 20040232497 - Akiyama, Satoru ; et al.	2004-11-25
Semiconductor device App 20040212000 - Matsui, Yuichi ; et al.	2004-10-28
Fabrication method for semiconductor integrated devices App 20040171210 - Shimamoto, Yasuhiro ; et al.	2004-09-02
Fabrication method for semiconductor integrated devices Grant 6,743,739 - Shimamoto , et al. June 1, 2	2004-06-01
Capacitor Structure And A Semiconductor Device With A First Metal Layer, A Second Metal Silicide Layer Formed Over The First Metal Layer And A Second Metal Layer Formed Over The Second Metal Silicide Layer Grant 6,720,603 - Iijima , et al. April 13, 2	2004-04-13
Semiconductor integrated circuit device and the method of producing the same Grant 6,664,157 - Iijima , et al. December 16, 2	2003-12-16
Semiconductor device App 20030151083 - Matsui, Yuichi ; et al.	2003-08-14
Semiconductor integrated circuit device and process for manufacturing the same App 20030107073 - Iijima, Shinpei ; et al.	2003-06-12
Method Of Forming A Capacitor In A Semiconductor Integrated Circuit Device Using A Metal Silicon Nitride Layer To Protect An Underlying Metal Silicide Layer From Oxidation During Subsequent Processing Steps Grant 6,534,375 - Iijima , et al. March 18, 2	2003-03-18
Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device Grant 6,503,791 - Matsui , et al. January 7, 2	2003-01-07
Fabrication method for semiconductor integrated devices App 20020192899 - Shimamoto, Yasuhiro ; et al.	2002-12-19
Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device App 20020192896 - Matsui, Yuichi ; et al.	2002-12-19
Method of manufacturing a semiconductor integrated circuit Grant 6,451,665 - Yunogami , et al. September 17, 2	2002-09-17
Fabricating method of semiconductor integrated circuits App 20020102826 - Shimamoto, Yasuhiro ; et al.	2002-08-01
Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device App 20020030210 - Matsui, Yuichi ; et al.	2002-03-14
Semiconductor integrated circuit device and process for manufacturing the same App 20020022357 - Iijima, Shinpei ; et al.	2002-02-21
Semiconductor integrated circuit device and the method of producing the same App 20010038114 - IIjima, Shinpei ; et al.	2001-11-08
Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device App 20010026988 - Matsui, Yuichi ; et al.	2001-10-04
Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor device App 20010023955 - Matsui, Yuichi ; et al.	2001-09-27
MIS type diamond field-effect transistor with a diamond insulator undercoat Grant 5,107,315 - Kumagai , et al. April 21, 1	1992-04-21
Schottky diode manufacturing process employing the synthesis of a polycrystalline diamond thin film Grant 5,086,014 - Miyata , et al. February 4, 1	1992-02-04
Compound semiconductor device with superlattice channel region Grant 4,894,691 - Matsui January 16, 1	1990-01-16
Compound semiconductor device Grant 4,823,171 - Matsui April 18, 1	1989-04-18

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