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name:-0.017038106918335
name:-0.011904001235962
name:-0.0005190372467041
Matsuhashi; Hideaki Patent Filings

Matsuhashi; Hideaki

Patent Applications and Registrations

Patent applications and USPTO patent grants for Matsuhashi; Hideaki.The latest application filed is for "field effect transistor and semiconductor device".

Company Profile
0.10.11
  • Matsuhashi; Hideaki - Kyoto JP
  • Matsuhashi; Hideaki - Tokyo JP
  • Matsuhashi; Hideaki - Kyoto-shi JP
  • Matsuhashi; Hideaki - Saitama JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Scroll compressor and method for machining scroll wrap
Grant 7,540,726 - Matsuhashi June 2, 2
2009-06-02
Non-rotary cutting tool and process of machining scroll member by using the same
Grant 7,293,945 - Matsuhashi , et al. November 13, 2
2007-11-13
Process of machining scroll member by using non-rotary cutting tool
Grant 7,237,992 - Matsuhashi , et al. July 3, 2
2007-07-03
Field effect transistor and semiconductor device
App 20070018277 - Matsuhashi; Hideaki
2007-01-25
Scroll compressor and method of machining scroll lap
App 20060159580 - Matsuhashi; Hideaki
2006-07-20
Non-rotary cutting tool and process of machining scroll member by using the same
App 20060133904 - Matsuhashi; Hideaki ;   et al.
2006-06-22
Process of machining scroll member by using non-rotary cutting tool
App 20050166739 - Matsuhashi, Hideaki ;   et al.
2005-08-04
Method of manufacturing a capacitor with copper electrodes and diffusion barriers
Grant 6,921,689 - Matsuhashi July 26, 2
2005-07-26
Capacitor having copper electrodes and diffusion barrier layers
Grant 6,856,501 - Matsuhashi February 15, 2
2005-02-15
Method for manufacturing field effect transistor
Grant 6,833,589 - Matsuhashi , et al. December 21, 2
2004-12-21
Non-rotary cutting tool and process of machining scroll member by using the same
App 20040221696 - Matsuhashi, Hideaki ;   et al.
2004-11-11
Semiconductor device formed on an SOI structure with a stress-relief layer
Grant 6,809,380 - Matsuhashi October 26, 2
2004-10-26
Capacitor having copper electrodes and diffusion barrier layers
App 20040190220 - Matsuhashi, Hideaki
2004-09-30
Method of manufacturing a capacitor with copper electrodes and diffusion barriers
App 20040188748 - Matsuhashi, Hideaki
2004-09-30
Capacitor and a manufacturing process therefor
Grant 6,759,703 - Matsuhashi July 6, 2
2004-07-06
MOSFET fabrication method
Grant 6,727,147 - Nakamura , et al. April 27, 2
2004-04-27
Semiconductor device
App 20040075142 - Matsuhashi, Hideaki
2004-04-22
Mosfet Fabrication Method
App 20030228735 - Nakamura, Toshiyuki ;   et al.
2003-12-11
Method for manufacturing field effect transistor
App 20030049940 - Matsuhashi, Hideaki ;   et al.
2003-03-13
Fabrication Method Of A Dual-gate Cmosfet
App 20020061617 - Matsuhashi, Hideaki
2002-05-23
Method of depositing a tungsten film
Grant 5,108,952 - Matsuhashi April 28, 1
1992-04-28

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