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name:-0.01454496383667
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Matsuda; Tokiyoshi Patent Filings

Matsuda; Tokiyoshi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Matsuda; Tokiyoshi.The latest application filed is for "crystal, crystalline oxide semiconductor, semiconductor film containing crystalline oxide semiconductor, semiconductor device including crystal and/or semiconductor film and system including semiconductor device".

Company Profile
15.11.17
  • Matsuda; Tokiyoshi - Kyoto JP
  • MATSUDA; Tokiyoshi - Kyoto-shi Kyoto
  • Matsuda; Tokiyoshi - Kochi JP
  • MATSUDA; Tokiyoshi - Kochi-shi JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Semiconductor apparatus
Grant 11,233,129 - Matsuda , et al. January 25, 2
2022-01-25
Crystal, crystalline oxide semiconductor, semiconductor film containing crystalline oxide semiconductor, semiconductor device including crystal and/or semiconductor film and system including semiconductor device
Grant 11,088,242 - Matsuda , et al. August 10, 2
2021-08-10
Crystal, Crystalline Oxide Semiconductor, Semiconductor Film Containing Crystalline Oxide Semiconductor, Semiconductor Device Including Crystal And/or Semiconductor Film And System Including Semiconductor Device
App 20210143251 - MATSUDA; Tokiyoshi ;   et al.
2021-05-13
Layered structure, semiconductor device including layered structure, and semiconductor system including semiconductor device
Grant 10,930,743 - Matsuda , et al. February 23, 2
2021-02-23
Semiconductor Apparatus
App 20200403070 - MATSUDA; Tokiyoshi ;   et al.
2020-12-24
Semiconductor Apparatus
App 20200395449 - MATSUDA; Tokiyoshi ;   et al.
2020-12-17
Semiconductor Apparatus
App 20200395450 - MATSUDA; Tokiyoshi ;   et al.
2020-12-17
Layered structure, semiconductor device including layered structure, and semiconductor system including semiconductor device
Grant 10,770,553 - Matsuda , et al. Sep
2020-09-08
P-type Oxide Semiconductor Film And Method For Forming Same
App 20200279955 - TAKAHASHI; Isao ;   et al.
2020-09-03
Semiconductor device and method of manufacturing semiconductor device
Grant 10,580,648 - Jinno , et al.
2020-03-03
Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film
Grant 10,460,934 - Oshima , et al. Oc
2019-10-29
Layered Structure, Semiconductor Device Including Layered Structure, And Semiconductor System Including Semiconductor Device
App 20190103465 - MATSUDA; Tokiyoshi ;   et al.
2019-04-04
Semiconductor Device And Method Of Manufacturing Semiconductor Device
App 20190074178 - JINNO; Riena ;   et al.
2019-03-07
Method For Producing Crystalline Film
App 20190055646 - OSHIMA; Yuichi ;   et al.
2019-02-21
Crystal, Crystalline Film, Semiconductor Device Including Crystalline Film, And Method For Producing Crystalline Film
App 20190057866 - OSHIMA; Yuichi ;   et al.
2019-02-21
Crystalline Film, Semiconductor Device Including Crystalline Film, And Method For Producing Crystalline Film
App 20190057865 - OSHIMA; Yuichi ;   et al.
2019-02-21
Method For Producing Crystalline Film
App 20190055667 - OSHIMA; Yuichi ;   et al.
2019-02-21
Layered Structure, Semiconductor Device Including Layered Structure, And Semiconductor System Including Semiconductor Device
App 20190006472 - MATSUDA; Tokiyoshi ;   et al.
2019-01-03
Manufacturing method of semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing
Grant 7,993,964 - Hirao , et al. August 9, 2
2011-08-09
Manufacturing method of thin film transistor including low resistance conductive thin films
Grant 7,981,734 - Furuta , et al. July 19, 2
2011-07-19
Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
Grant 7,977,169 - Hirao , et al. July 12, 2
2011-07-12
Manufacturing Method Of Semiconductor Device Including Active Layer Of Zinc Oxide With Controlled Crystal Lattice Spacing
App 20090286351 - HIRAO; Takashi ;   et al.
2009-11-19
Manufacturing Method Of Thin Film Transistor Including Low Resistance Conductive Thin Films
App 20090269881 - FURUTA; Mamoru ;   et al.
2009-10-29
Semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing and manufacturing method thereof
Grant 7,598,520 - Hirao , et al. October 6, 2
2009-10-06
Thin film transistor including low resistance conductive thin films and manufacturing method thereof
Grant 7,576,394 - Furuta , et al. August 18, 2
2009-08-18
Semiconductor device including active layer of zinc oxide with controlled crystal lattice spacing and manufacturing method thereof
App 20070278490 - Hirao; Takashi ;   et al.
2007-12-06
Thin film transistor including low resistance conductive thin films and manufacturing method thereof
App 20070187760 - Furuta; Mamoru ;   et al.
2007-08-16
Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
App 20070187678 - Hirao; Takashi ;   et al.
2007-08-16

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