loadpatents
name:-0.014323949813843
name:-0.015836954116821
name:-0.0040450096130371
Masuduzzaman; Muhammad Patent Filings

Masuduzzaman; Muhammad

Patent Applications and Registrations

Patent applications and USPTO patent grants for Masuduzzaman; Muhammad.The latest application filed is for "two-stage programming using variable step voltage (dvpgm) for non-volatile memory structures".

Company Profile
4.13.14
  • Masuduzzaman; Muhammad - San Jose CA
  • Masuduzzaman; Muhammad - Milpitas CA
  • Masuduzzaman; Muhammad - West Lafayette IN
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Bi-directional sensing in a memory
Grant 11,423,993 - Zhang , et al. August 23, 2
2022-08-23
Two-stage programming using variable step voltage (DVPGM) for non-volatile memory structures
Grant 11,417,393 - Islam , et al. August 16, 2
2022-08-16
Two-stage Programming Using Variable Step Voltage (dvpgm) For Non-volatile Memory Structures
App 20220215873 - Islam; Sujjatul ;   et al.
2022-07-07
Enhanced multistate verify techniques in a memory device
Grant 11,322,213 - Masuduzzaman , et al. May 3, 2
2022-05-03
Neighbor Aware Multi-bias Programming In Scaled Bics
App 20210391012 - Masuduzzaman; Muhammad ;   et al.
2021-12-16
Enhanced Multistate Verify Techniques In A Memory Device
App 20210391025 - Masuduzzaman; Muhammad ;   et al.
2021-12-16
Neighboring or logical minus word line dependent verify with sense time in programming of non-volatile memory
Grant 11,139,038 - Masuduzzaman , et al. October 5, 2
2021-10-05
Method of concurrent multi-state programming of non-volatile memory with bit line voltage step up
Grant 11,081,184 - Zhang , et al. August 3, 2
2021-08-03
Bi-directional Sensing In A Memory
App 20210134372 - Zhang; Zhiping ;   et al.
2021-05-06
Method Of Concurrent Multi-state Programming Of Non-volatile Memory With Bit Line Voltage Step Up
App 20210134370 - Zhang; Zhiping ;   et al.
2021-05-06
Method For Concurrent Programming
App 20210134369 - Zhang; Zhiping ;   et al.
2021-05-06
Temperature based programming in memory
Grant 10,984,876 - Dak , et al. April 20, 2
2021-04-20
Temperature Based Programming In Memory
App 20200402594 - Dak; Piyush ;   et al.
2020-12-24
NEMS devices with series ferroelectric negative capacitor
Grant 10,312,342 - Alam , et al.
2019-06-04
Pulsed control line biasing in memory
Grant 10,217,520 - Masuduzzaman , et al. Feb
2019-02-26
Smart skip verify mode for programming a memory device
Grant 10,014,063 - Tseng , et al. July 3, 2
2018-07-03
Pulsed Control Line Biasing In Memory
App 20180158531 - Masuduzzaman; Muhammad ;   et al.
2018-06-07
Nems Devices With Series Ferroelectric Negative Capacitor
App 20180012972 - Alam; Muhammad Ashraful ;   et al.
2018-01-11
Multi-state program using controlled weak boosting for non-volatile memory
Grant 9,842,657 - Dutta , et al. December 12, 2
2017-12-12
Pulsed control line biasing in memory
Grant 9,779,832 - Masuduzzaman , et al. October 3, 2
2017-10-03
NEMS devices with series ferroelectric negative capacitor
Grant 9,755,041 - Alam , et al. September 5, 2
2017-09-05
Dynamic threshold voltage compaction for non-volatile memory
Grant 9,711,211 - Masuduzzaman , et al. July 18, 2
2017-07-18
Dynamic Threshold Voltage Compaction For Non-volatile Memory
App 20170125087 - Masuduzzaman; Muhammad ;   et al.
2017-05-04
Smart Skip Verify Mode For Programming A Memory Device
App 20170125117 - Tseng; Huai-Yuan ;   et al.
2017-05-04
Increasing Lifetime Of Ferroelectric Devices
App 20160379702 - Alam; Muhammad Ashraful ;   et al.
2016-12-29
Nems Devices With Series Ferroelectric Negative Capacitor
App 20160207761 - Alam; Muhammad Ashraful ;   et al.
2016-07-21
Lifetime of Ferroelectric Devices
App 20150124514 - Alam; Muhammad Ashraful ;   et al.
2015-05-07

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