| Patent | Date |
|---|
Amplifier Circuit, Cmos Inverter Amplifier Circuit, Comparator Circuit, Delta-sigma Analog-to-digital Converter, And Semiconductor Device
App 20160013763 - TOMIMATSU; Kazuki ; et al. | 2016-01-14 |
Digital high-frequency generator circuit
Grant 8,134,419 - Nakano , et al. March 13, 2 | 2012-03-13 |
Digital High-frequency Generator Circuit
App 20110037502 - NAKANO; Kazuo ; et al. | 2011-02-17 |
Parallel wiring and integrated circuit
Grant 7,504,587 - Masu , et al. March 17, 2 | 2009-03-17 |
Variable inductor and method for adjusting inductance of same
Grant 7,071,806 - Masu , et al. July 4, 2 | 2006-07-04 |
Parallel wiring and integrated circuit
App 20050056455 - Masu, Kazuya ; et al. | 2005-03-17 |
Code division multiple access communication system
Grant 6,865,174 - Tsubouchi , et al. March 8, 2 | 2005-03-08 |
Variable inductor and method for adjusting inductance of same
App 20040090298 - Masu, Kazuya ; et al. | 2004-05-13 |
Process for forming amorphous titanium silicon nitride on substrate
App 20020017658 - Tsubouchi, Kazuo ; et al. | 2002-02-14 |
Code division multiplex communications system
Grant 6,333,925 - Tsubouchi , et al. December 25, 2 | 2001-12-25 |
Semiconductor Device And Process For Forming Amorphous Titanium Silicon Nitride On Substrate
App 20010045660 - TSUBOUCHI, KAZUO ; et al. | 2001-11-29 |
Gas feeding device for controlled vaporization of an organometallic compound used in deposition film formation
Grant 5,755,885 - Mikoshiba , et al. May 26, 1 | 1998-05-26 |
Process for forming deposited film
Grant 5,753,320 - Mikoshiba , et al. May 19, 1 | 1998-05-19 |
Process for thin film formation
Grant 5,604,153 - Tsubouchi , et al. February 18, 1 | 1997-02-18 |
Gas feeding device for controlled vaporization of an organometallic compound used in deposition film formation
Grant 5,476,547 - Mikoshiba , et al. December 19, 1 | 1995-12-19 |
Apparatus for vaporizing liquid raw material and apparatus for forming thin film
Grant 5,421,895 - Tsubouchi , et al. June 6, 1 | 1995-06-06 |
Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride
Grant 5,393,699 - Mikoshiba , et al. February 28, 1 | 1995-02-28 |
Process for non-selectively forming deposition film on a non-electron-donative surface
Grant 5,364,664 - Tsubouchi , et al. November 15, 1 | 1994-11-15 |
Process for forming deposited film by use of alkyl aluminum hydride
Grant 5,328,873 - Mikoshiba , et al. July 12, 1 | 1994-07-12 |
Process for forming deposited film by use of alkyl aluminum hydride and process for preparing semiconductor device
Grant 5,316,972 - Mikoshiba , et al. May 31, 1 | 1994-05-31 |
Integrated circuit
Grant 5,245,207 - Mikoshiba , et al. September 14, 1 | 1993-09-14 |
Metal film forming method
Grant 5,208,187 - Tsubouchi , et al. May 4, 1 | 1993-05-04 |
Process for forming metal deposited film containing aluminum as main component by use of alkyl hydride
Grant 5,196,372 - Mikoshiba , et al. March 23, 1 | 1993-03-23 |
Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride
Grant 5,180,687 - Mikoshiba , et al. January 19, 1 | 1993-01-19 |
Process for forming deposited film by use of alkyl aluminum hydride
Grant 5,179,042 - Mikoshiba , et al. January 12, 1 | 1993-01-12 |
Plasma CVD of aluminum films
Grant 5,091,210 - Mikoshiba , et al. February 25, 1 | 1992-02-25 |
| 