loadpatents
name:-0.0087730884552002
name:-0.010976076126099
name:-0.00051784515380859
Massies; Jean Patent Filings

Massies; Jean

Patent Applications and Registrations

Patent applications and USPTO patent grants for Massies; Jean.The latest application filed is for "production of a semiconductor support based on group iii nitrides".

Company Profile
0.8.8
  • Massies; Jean - Valbonne FR
  • Massies; Jean - Paris FR
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Production of a semiconductor support based on group III nitrides
Grant 10,522,346 - Semond , et al. Dec
2019-12-31
Method for producing a passivated semiconductor structure based on group III nitrides, and one such structure
Grant 10,361,077 - Semond , et al.
2019-07-23
Production Of A Semiconductor Support Based On Group Iii Nitrides
App 20180019120 - SEMOND; Fabrice ;   et al.
2018-01-18
Method For Producing A Passivated Semiconductor Structure Based On Group Iii Nitrides, And One Such Structure
App 20180012753 - SEMOND; Fabrice ;   et al.
2018-01-11
Monolithic Light-emitting Device
App 20160043272 - DAMILANO; Benjamin ;   et al.
2016-02-11
Method of manufacturing a light-emitting diode having electrically active and passive portions
Grant 8,470,618 - Massies , et al. June 25, 2
2013-06-25
Method Of Manufacturing A Light-emitting Diode
App 20110045623 - Massies; Jean ;   et al.
2011-02-24
Process for integrating a III-N type component on a (001) nominal silicium substrate
Grant 7,785,991 - Joblot , et al. August 31, 2
2010-08-31
Monolithic White Light-Emitting Diode
App 20090101934 - Massies; Jean ;   et al.
2009-04-23
Preparation Method Of A Coating Of Gallium Nitride
App 20080185611 - SEMOND; Fabrice ;   et al.
2008-08-07
Preparation Method Of A Coating Of Gallium Nitride
App 20080188065 - SEMOND; Fabrice ;   et al.
2008-08-07
Process For Integratng A Iii-n Type Component On A (001) Nominal Silicium Substrate
App 20080149936 - JOBLOT; SYLVAIN ;   et al.
2008-06-26
Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings
Grant 6,445,009 - Grandjean , et al. September 3, 2
2002-09-03
Electromagnetic wave detector with quantum well structure
Grant 5,506,418 - Bois , et al. April 9, 1
1996-04-09
System for regulating molecular flux and its application to co-evaporation techniques
Grant 4,160,166 - Etienne , et al. July 3, 1
1979-07-03

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