Martin; Jeremy I.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Martin; Jeremy I..The latest application filed is for "locally increasing sidewall density by ion implantation".

Company Profile

0.6.3

Martin; Jeremy I. - Austin TX

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Resist trim process to define small openings in dielectric layers Grant 7,737,021 - Dakshina-Murthy , et al. June 15, 2	2010-06-15
Copper damascene with low-k capping layer and improved electromigration reliability Grant 6,989,601 - van Ngo , et al. January 24, 2	2006-01-24
Copper damascene with low-k capping layer and improved electromigration reliability Grant 6,797,652 - Ngo , et al. September 28, 2	2004-09-28
Locally increasing sidewall density by ion implantation Grant 6,610,594 - Apelgren , et al. August 26, 2	2003-08-26
Method and test structure for characterizing sidewall damage in a semiconductor device Grant 6,600,333 - Martin , et al. July 29, 2	2003-07-29
Locally increasing sidewall density by ion implantation App 20030013296 - Apelgren, Eric M. ; et al.	2003-01-16
Resist trim process to define small openings in dielectric layers Grant 6,500,755 - Dakshina-Murthy , et al. December 31, 2	2002-12-31
Resist trim process to define small openings in dielectric layers App 20020068436 - Dakshina-Murthy, Srikanteswara ; et al.	2002-06-06
Dielectric formation to seal porosity of low dielectic constant (low k) materials after etch App 20010051420 - Besser, Paul R. ; et al.	2001-12-13

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