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name:-0.017072916030884
name:-0.011546850204468
name:-0.0019831657409668
Mars; Danny E. Patent Filings

Mars; Danny E.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Mars; Danny E..The latest application filed is for "nanostructure optoelectronic device with independently controllable junctions".

Company Profile
0.13.10
  • Mars; Danny E. - Los Altos CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Nanostructure optoelectronic device with independently controllable junctions
Grant 9,806,111 - Kim , et al. October 31, 2
2017-10-31
Nanostructure Optoelectronic Device With Independently Controllable Junctions
App 20140134769 - Kim; James C. ;   et al.
2014-05-15
Nanostructure optoelectronic device with independently controllable junctions
Grant 8,659,037 - Kim , et al. February 25, 2
2014-02-25
Nanostructure optoelectronic device having sidewall electrical contact
Grant 8,476,637 - Kim , et al. July 2, 2
2013-07-02
Multi-junction solar cell having sidewall bi-layer electrical interconnect
Grant 8,431,817 - Kim , et al. April 30, 2
2013-04-30
Nanostructure Array Transistor
App 20120025169 - Mars; Danny E. ;   et al.
2012-02-02
Multi-junction Solar Cell Having Sidewall Bi-layer Electrical Interconnect
App 20110297214 - Kim; James C. ;   et al.
2011-12-08
Nanostructure Optoelectronic Device Having Sidewall Electrical Contact
App 20110297913 - Kim; James C. ;   et al.
2011-12-08
Nanostructure Optoelectronic Device With Independently Controllable Junctions
App 20110299074 - Kim; James C. ;   et al.
2011-12-08
Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant
Grant 7,123,638 - Leary , et al. October 17, 2
2006-10-17
Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant
App 20050083979 - Leary, Michael Howard ;   et al.
2005-04-21
Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice
Grant 6,878,959 - Bour , et al. April 12, 2
2005-04-12
Efficiency GaN-based light emitting devices
Grant 6,853,663 - Hasnain , et al. February 8, 2
2005-02-08
Method and apparatus for improving wavelength stability for InGaAsN devices
App 20040161006 - Chang, Ying-Lan ;   et al.
2004-08-19
Method and apparatus for selective execution of microfluidic circuits utilizing electrically addressable gas generators
Grant 6,756,018 - Nishimura , et al. June 29, 2
2004-06-29
Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice
App 20040099856 - Bour, David P. ;   et al.
2004-05-27
Method and apparatus for selective execution of microfluidic circuits utilizing electrically addressable gas generators
App 20020137229 - Nishimura, Ken A. ;   et al.
2002-09-26
Efficiency GaN-based light emitting devices
App 20020110172 - Hasnain, Ghulam ;   et al.
2002-08-15
Efficient phosphor-conversion led structure
Grant 6,155,699 - Miller , et al. December 5, 2
2000-12-05
Long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate
Grant 5,805,624 - Yang , et al. September 8, 1
1998-09-08

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