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Atomic Layer Deposition Of Tantalum-containing Materials Using The Tantalum Precursor Taimata App 20090202710 - Marcadal; Christophe ;   et al. | 2009-08-13 |
Chemical delivery apparatus for CVD or ALD Grant 7,568,495 - Nakashima , et al. August 4, 2 | 2009-08-04 |
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Chemical delivery apparatus for CVD or ALD App 20070235085 - Nakashima; Norman ;   et al. | 2007-10-11 |
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Gas Coupler For Substrate Processing Chamber App 20070144436 - Huston; Joel ;   et al. | 2007-06-28 |
Apparatus And Process For Plasma-enhanced Atomic Layer Deposition App 20070128863 - Ma; Paul ;   et al. | 2007-06-07 |
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Atomic Layer Deposition Processes For Ruthenium Materials App 20070077750 - Ma; Paul ;   et al. | 2007-04-05 |
Method and apparatus for generating a precursor for a semiconductor processing system App 20070067609 - Chen; Ling ;   et al. | 2007-03-22 |
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Reduction of copper dewetting by transition metal deposition App 20060199372 - Chung; Hua ;   et al. | 2006-09-07 |
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Multi-step barrier deposition method App 20050255690 - Chen, Ling ;   et al. | 2005-11-17 |
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Method and apparatus of generating PDMAT precursor App 20050189072 - Chen, Ling ;   et al. | 2005-09-01 |
Method and apparatus of generating PDMAT precursor Grant 6,905,541 - Chen , et al. June 14, 2 | 2005-06-14 |
Tantalum barrier layer for copper metallization App 20050074968 - Chen, Ling ;   et al. | 2005-04-07 |
Integration of ALD/CVD barriers with porous low k materials App 20040256351 - Chung, Hua ;   et al. | 2004-12-23 |
Reliability barrier integration for Cu application App 20040209460 - Xi, Ming ;   et al. | 2004-10-21 |
CVD TiSiN barrier for copper integration App 20040197492 - Chen, Ling ;   et al. | 2004-10-07 |
Method and apparatus of generating PDMAT precursor App 20040014320 - Chen, Ling ;   et al. | 2004-01-22 |
Titanium silicon nitride (TISIN) barrier layer for copper diffusion App 20040009336 - Marcadal, Christophe ;   et al. | 2004-01-15 |
Process for removing an underlying layer and depositing a barrier layer in one reactor Grant 6,660,622 - Chen , et al. December 9, 2 | 2003-12-09 |
Copper interconnect barrier layer structure and formation method Grant 6,607,976 - Chen , et al. August 19, 2 | 2003-08-19 |
CVD TiSiN barrier for copper integration Grant 6,596,643 - Chen , et al. July 22, 2 | 2003-07-22 |
Methods and apparatus for improved vaporization of deposition material in a substrate processing system Grant 6,596,085 - Schmitt , et al. July 22, 2 | 2003-07-22 |
Barrier layer structure for copper metallization and method of forming the structure Grant 6,562,715 - Chen , et al. May 13, 2 | 2003-05-13 |
Process for removing an underlying layer and depositing a barrier layer in one reactor App 20030087520 - Chen, Ling ;   et al. | 2003-05-08 |
Copper interconnect barrier layer structure and formation method App 20030059980 - Chen, Ling ;   et al. | 2003-03-27 |
CVD TiSiN barrier for copper integration App 20030022507 - Chen, Ling ;   et al. | 2003-01-30 |
Method of using a barrier sputter reactor to remove an underlying barrier layer Grant 6,498,091 - Chen , et al. December 24, 2 | 2002-12-24 |
Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition App 20020192952 - Itoh, Toshio ;   et al. | 2002-12-19 |
W-CVD with fluorine-free tungsten nucleation App 20020190379 - Jian, Ping ;   et al. | 2002-12-19 |
Method of obtaining low temperature alpha-ta thin films using wafer bias App 20020142589 - Sundarrajan, Arvind ;   et al. | 2002-10-03 |
Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition Grant 6,455,421 - Itoh , et al. September 24, 2 | 2002-09-24 |
Reliability barrier integration for Cu application App 20020060363 - Xi, Ming ;   et al. | 2002-05-23 |
CVD method of depositing copper films by using improved organocopper precursor blend Grant 6,110,530 - Chen , et al. August 29, 2 | 2000-08-29 |