MANUTIUS IP INC.

Patent Applications and Registrations

Patent applications and USPTO patent grants for MANUTIUS IP INC..The latest application filed is for "p-type doping layers for use with light emitting devices".

Company Profile

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MANUTIUS IP INC. - Los Altos CA US
Manutius IP Inc - Los Altos CA US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Trademarks

Patent Activity

Patent	Date
Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow Grant 9,617,656 - Fenwick , et al. April 11, 2	2017-04-11
P-type doping layers for use with light emitting devices Grant 9,490,392 - Ting November 8, 2	2016-11-08
Non-reactive barrier metal for eutectic bonding process Grant 9,343,641 - Lin May 17, 2	2016-05-17
P-type Doping Layers For Use With Light Emitting Devices App 20160043275 - Ting; Steve	2016-02-11
Series Connected Segmented Led App 20150340554 - Lester; Steven D. ; et al.	2015-11-26
Light Emitting Devices Having Dislocation Density Maintaining Buffer Layers App 20150340555 - Yang; Long ; et al.	2015-11-26
P-type Doping Layers For Use With Light Emitting Devices App 20150318441 - Ting; Steve	2015-11-05
P-type doping layers for use with light emitting devices Grant 9,178,114 - Ting November 3, 2	2015-11-03
Light emitting devices having dislocation density maintaining buffer layers Grant 9,130,068 - Yang , et al. September 8, 2	2015-09-08
Series connected segmented LED Grant 9,123,853 - Lester , et al. September 1, 2	2015-09-01
GaN Based LED having reduced thickness and method for making the same Grant 9,082,892 - Lester , et al. July 14, 2	2015-07-14
GaN Based LED Having Reduced Thickness and Method for Making the Same App 20150125974 - Lester; Steven D. ; et al.	2015-05-07
P-type Doping Layers For Use With Light Emitting Devices App 20150024531 - Ting; Steve	2015-01-22
Light Emitting Devices Having Light Coupling Layers With Recessed Electrodes App 20140332838 - YAN; Li ; et al.	2014-11-13
Nucleation Of Aluminum Nitride On A Silicon Substrate Using An Ammonia Preflow App 20140318443 - FENWICK; William E. ; et al.	2014-10-30
P-type doping layers for use with light emitting devices Grant 8,828,752 - Ting September 9, 2	2014-09-09
Light emitting devices having light coupling layers with recessed electrodes Grant 8,822,243 - Yan , et al. September 2, 2	2014-09-02

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