Mak; Alfred

Patent Applications and Registrations

Patent applications and USPTO patent grants for Mak; Alfred.The latest application filed is for "methods and systems of transferring, docking and processing substrates".

Company Profile

0.27.14

Mak; Alfred - Fremont CA
Mak; Alfred - Union City CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Methods and systems of transferring, docking and processing substrates Grant 8,367,565 - Lei , et al. February 5, 2	2013-02-05
Methods and systems of transferring, docking and processing substrates Grant 8,268,734 - Lei , et al. September 18, 2	2012-09-18
Methods and systems of transferring a substrate to minimize heat loss Grant 8,110,511 - Lei , et al. February 7, 2	2012-02-07
Methods and Systems of Transferring, Docking and Processing Substrates App 20110217469 - Lei; Lawrence Chung-Lai ; et al.	2011-09-08
Methods and Systems of Transferring, Docking and Processing Substrates App 20110151119 - Lei; Lawrence Chung-Lai ; et al.	2011-06-23
Methods and systems of transferring, docking and processing substrates Grant 7,897,525 - Lei , et al. March 1, 2	2011-03-01
Methods and systems of transferring a substrate to minimize heat loss App 20100173439 - Lei; Lawrence Chung-Lai ; et al.	2010-07-08
Systems and methods for substrate processing App 20100162955 - Lei; Lawrence Chung-Lai ; et al.	2010-07-01
Methods and systems of transferring, docking and processing substrates App 20100167503 - Lei; Lawrence Chung-Lai ; et al.	2010-07-01
Integrated facility and process chamber for substrate processing App 20100162954 - Lei; Lawrence Chung-Lai ; et al.	2010-07-01
Formation of boride barrier layers using chemisorption techniques Grant 7,501,343 - Byun , et al. March 10, 2	2009-03-10
Formation of boride barrier layers using chemisorption techniques Grant 7,501,344 - Byun , et al. March 10, 2	2009-03-10
Formation Of Boride Barrier Layers Using Chemisorption Techniques App 20070197027 - Byun; Jeong Soo ; et al.	2007-08-23
Formation Of Boride Barrier Layers Using Chemisorption Techniques App 20070197028 - Byun; Jeong Soo ; et al.	2007-08-23
Formation of boride barrier layers using chemisorption techniques Grant 7,208,413 - Byun , et al. April 24, 2	2007-04-24
Formation of boride barrier layers using chemisorption techniques App 20050118804 - Byun, Jeong Soo ; et al.	2005-06-02
Deposition of tungsten nitride using plasma pretreatment in a chemical vapor deposition chamber Grant 6,872,429 - Chen , et al. March 29, 2	2005-03-29
Formation of boride barrier layers using chemisorption techniques Grant 6,831,004 - Byun , et al. December 14, 2	2004-12-14
Formation of boride barrier layers using chemisorption techniques App 20040018723 - Byun, Jeong Soo ; et al.	2004-01-29
Aluminum oxide chamber and process App 20030198754 - Xi, Ming ; et al.	2003-10-23
Formation of boride barrier layers using chemisorption techniques Grant 6,620,723 - Byun , et al. September 16, 2	2003-09-16
Selective tungsten stud as copper diffusion barrier to silicon contact App 20030073304 - Mak, Alfred ; et al.	2003-04-17
Method of forming refractory metal nitride layers using chemisorption techniques App 20020086111 - Byun, Jeong Soo ; et al.	2002-07-04
Method for unreacted precursor conversion and effluent removal Grant 6,402,806 - Schmitt , et al. June 11, 2	2002-06-11
Deposition of tungsten nitride by plasma enhanced chemical vapor deposition Grant 6,309,713 - Mak , et al. October 30, 2	2001-10-30
Deposition of tungsten nitride by plasma enhanced chemical vapor deposition App 20010016429 - Mak, Alfred ; et al.	2001-08-23
Gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride Grant 6,251,190 - Mak , et al. June 26, 2	2001-06-26
Low resistivity W using B2H6 nucleation step Grant 6,206,967 - Mak , et al. March 27, 2	2001-03-27
Deposition of copper with increased adhesion Grant 6,171,661 - Zheng , et al. January 9, 2	2001-01-09
Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride Grant 6,162,715 - Mak , et al. December 19, 2	2000-12-19
Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal Grant 6,099,649 - Schmitt , et al. August 8, 2	2000-08-08
Low resistivity W using B.sub.2 H.sub.6 nucleation step Grant 6,099,904 - Mak , et al. August 8, 2	2000-08-08
Electrostatic chuck with fluid flow regulator Grant 5,883,778 - Sherstinsky , et al. March 16, 1	1999-03-16
Methods and apparatus for minimizing excess aluminum accumulation in CVD chambers Grant 5,858,464 - Littau , et al. January 12, 1	1999-01-12
Apparatus for improving wafer and chuck edge protection Grant 5,740,009 - Pu , et al. April 14, 1	1998-04-14
Apparatus for centering substrates on support members Grant 5,673,922 - Sherstinsky , et al. October 7, 1	1997-10-07
Electrostatic chuck Grant 5,671,117 - Sherstinsky , et al. September 23, 1	1997-09-23
Method of making a dielectric chuck Grant 5,634,266 - Sherstinsky , et al. June 3, 1	1997-06-03
Clamping ring apparatus for processing semiconductor wafers Grant 5,316,278 - Sherstinsky , et al. May 31, 1	1994-05-31
Process for treating aluminum surfaces in a vacuum apparatus Grant 5,201,990 - Chang , et al. April 13, 1	1993-04-13

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