Patent | Date |
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Programmable resistance memory Grant 8,908,413 - Lowrey , et al. December 9, 2 | 2014-12-09 |
Memory device Grant 8,440,501 - Sargent , et al. May 14, 2 | 2013-05-14 |
Arsenic-containing variable resistance materials Grant 8,217,379 - Schell , et al. July 10, 2 | 2012-07-10 |
Programmable Resistance Memory App 20110305075 - Lowrey; Tyler ;   et al. | 2011-12-15 |
Programmable resistance memory Grant 8,009,455 - Lowrey , et al. August 30, 2 | 2011-08-30 |
Memory Device App 20110154663 - Sargent; David ;   et al. | 2011-06-30 |
Memory device Grant 7,906,772 - Sargent , et al. March 15, 2 | 2011-03-15 |
Arsenic-Containing Variable Resistance Materials App 20110012080 - Schell; Carl ;   et al. | 2011-01-20 |
Programmable resistance memory App 20100182825 - Lowrey; Tyler ;   et al. | 2010-07-22 |
Memory Device App 20090057642 - Sargent; David ;   et al. | 2009-03-05 |
Programmable resistance memory element and method for making same Grant 7,365,354 - Maimon April 29, 2 | 2008-04-29 |
Method for making tapered opening for programmable resistance memory element App 20060205108 - Maimon; Jon ;   et al. | 2006-09-14 |
Method for making tapered opening for programmable resistance memory element Grant 7,045,383 - Maimon , et al. May 16, 2 | 2006-05-16 |
Programmable resistance memory element Grant 6,972,428 - Maimon December 6, 2 | 2005-12-06 |
Method for making programmable resistance memory element Grant 6,927,093 - Lowrey , et al. August 9, 2 | 2005-08-09 |
Programmable resistance memory element and method for making same App 20050012086 - Maimon, Jon | 2005-01-20 |
Method for making programmable resistance memory element App 20040175857 - Lowrey, Tyler ;   et al. | 2004-09-09 |
Programmable resistance memory element Grant 6,774,387 - Maimon August 10, 2 | 2004-08-10 |
Method for making programmable resistance memory element Grant 6,750,079 - Lowrey , et al. June 15, 2 | 2004-06-15 |
Method for making programmable resistance memory element Grant 6,733,956 - Maimon , et al. May 11, 2 | 2004-05-11 |
Method for making tapered opening for programmable resistance memory element App 20030215978 - Maimon, Jon ;   et al. | 2003-11-20 |
Elimination of narrow device width effects in complementary metal oxide semiconductor (CMOS) devices Grant 6,638,832 - Brady , et al. October 28, 2 | 2003-10-28 |
Method for making small pore for use in programmable resistance memory element Grant 6,613,604 - Maimon , et al. September 2, 2 | 2003-09-02 |
Method for making programmable resistance memory element using silylated photoresist Grant 6,589,714 - Maimon , et al. July 8, 2 | 2003-07-08 |
Programmable resistance memory element and method for making same App 20030122156 - Maimon, Jon | 2003-07-03 |
Method for making programmable resistance memory element using silylated photoresist App 20030039924 - Maimon, Jon ;   et al. | 2003-02-27 |
Method for making small pore for use in programmable resistance memory element App 20030027398 - Maimon, Jon ;   et al. | 2003-02-06 |
Method for making programmable resistance memory element App 20020197566 - Maimon, Jon ;   et al. | 2002-12-26 |
Programmable resistance memory element and method for making same App 20020195621 - Maimon, Jon | 2002-12-26 |
Integrated circuit capable of operating at two different power supply voltages Grant 6,468,860 - Polavarapu , et al. October 22, 2 | 2002-10-22 |
Elimination of narrow device width effects in complementary metal oxide semiconductor (CMOS) devices App 20020081797 - Brady, Frederick T. ;   et al. | 2002-06-27 |
Method for making programmable resistance memory element App 20020045323 - Lowrey, Tyler ;   et al. | 2002-04-18 |