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name:-0.0089809894561768
name:-0.0068449974060059
name:-0.00060105323791504
Maeng; Chang Ho Patent Filings

Maeng; Chang Ho

Patent Applications and Registrations

Patent applications and USPTO patent grants for Maeng; Chang Ho.The latest application filed is for "siloxane and organic-based mol contact patterning".

Company Profile
0.7.8
  • Maeng; Chang Ho - Cohoes NY
  • Maeng; Chang Ho - Malta NY
  • MAENG; Chang Ho - Ballston Spa NY
  • Maeng; Chang Ho - Clifton Park NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Methods of forming field effect transistors (FETS) with gate cut isolation regions between replacement metal gates
Grant 10,090,402 - Park , et al. October 2, 2
2018-10-02
Siloxane and organic-based MOL contact patterning
Grant 10,056,458 - Maeng , et al. August 21, 2
2018-08-21
Embedded silicon carbide block patterning
Grant 9,922,972 - Qiu , et al. March 20, 2
2018-03-20
Siloxane And Organic-based Mol Contact Patterning
App 20170200792 - MAENG; Chang Ho ;   et al.
2017-07-13
Methods For Producing Integrated Circuits With Air Gaps And Integrated Circuits Produced From Such Methods
App 20170162430 - Dai; Xintuo ;   et al.
2017-06-08
Semiconductor Structures With Coplanar Recessed Gate Layers And Fabrication Methods
App 20160049495 - TREVINO; Kristina ;   et al.
2016-02-18
Semiconductor structures with coplanar recessed gate layers and fabrication methods
Grant 9,252,238 - Trevino , et al. February 2, 2
2016-02-02
Integrated circuits having replacement metal gates with improved threshold voltage performance and methods for fabricating the same
Grant 9,147,680 - Trevino , et al. September 29, 2
2015-09-29
Selective removal of gate structure sidewall(s) to facilitate sidewall spacer protection
Grant 8,993,445 - Choi , et al. March 31, 2
2015-03-31
Integrated Circuits Having Replacement Metal Gates With Improved Threshold Voltage Performance And Methods For Fabricating The Same
App 20150021694 - Trevino; Kristina ;   et al.
2015-01-22
Methods For Forming Integrated Circuits With Reduced Replacement Metal Gate Height Variability
App 20150024584 - Wells; Gabriel Padron ;   et al.
2015-01-22
Reducing gate height variance during semiconductor device formation
Grant 8,900,940 - Jha , et al. December 2, 2
2014-12-02
Selective Removal Of Gate Structure Sidewall(s) To Facilitate Sidewall Spacer Protection
App 20140199845 - CHOI; Dae-Han ;   et al.
2014-07-17
Reducing Gate Height Variance During Semiconductor Device Formation
App 20140193957 - Jha; Ashish K. ;   et al.
2014-07-10
Method Of Forming Semiconductor Fins
App 20140148011 - Choi; Dae-han ;   et al.
2014-05-29

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