Maekawa; Masashi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Maekawa; Masashi.The latest application filed is for "semiconductor device and method for manufacturing same".

Company Profile

1.17.5

Maekawa; Masashi - Osaka N/A JP
Maekawa; Masashi - Nara JP
Maekawa, Masashi - Nara-shi JP
Maekawa, Masashi - Ichinomoto-cho JP
Maekawa; Masashi - Vancouver WA
Maekawa; Masashi - Sagamihara JP
Maekawa; Masashi - Atsugi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Selective recrystallization of semiconductor Grant 8,466,048 - Itoh , et al. June 18, 2	2013-06-18
Semiconductor Device And Method For Manufacturing Same App 20110315995 - Itoh; Yoshiyuki ; et al.	2011-12-29
Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof Grant 7,153,359 - Maekawa , et al. December 26, 2	2006-12-26
Single crystal TFT from continuous transition metal delivery method Grant 6,784,455 - Maekawa , et al. August 31, 2	2004-08-31
Single crystal TFT from continuous transition metal delivery method Grant 6,620,661 - Maekawa , et al. September 16, 2	2003-09-16
Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof App 20030061984 - Maekawa, Masashi ; et al.	2003-04-03
Single crystal TFT from continuous transition metal delivery method App 20020090801 - Maekawa, Masashi ; et al.	2002-07-11
Single crystal TFT from continuous transition metal delivery method App 20020086471 - Maekawa, Masashi ; et al.	2002-07-04
Single crystal TFT from continuous transition metal delivery method Grant 6,346,437 - Maekawa , et al. February 12, 2	2002-02-12
Selective silicide thin-film transistor having polysilicon active layers with crystallizing metal agent introduced only in the source/drain regions Grant 6,242,779 - Maekawa June 5, 2	2001-06-05
Thin film transistor in metal-induced crystallized region formed around a transition metal nucleus site App 20010002324 - Maekawa, Masashi ; et al.	2001-05-31
Selected site, metal-induced, continuous crystallization method Grant 6,228,693 - Maekawa , et al. May 8, 2	2001-05-08
Method of forming polycrystalline film by steps including introduction of nickel and rapid thermal anneal Grant 6,225,197 - Maekawa May 1, 2	2001-05-01
Method for fabricating thin film transistors Grant 6,162,667 - Funai , et al. December 19, 2	2000-12-19
Thin-film transistor polycrystalline film formation by nickel induced, rapid thermal annealing method Grant 6,066,547 - Maekawa May 23, 2	2000-05-23
Selective silicide thin-film transistor and method for same Grant 5,940,693 - Maekawa August 17, 1	1999-08-17
Semiconductor device and method for fabricating the same Grant 5,814,835 - Makita , et al. September 29, 1	1998-09-29
Glass-ceramic for information recording disk Grant 5,561,089 - Ishizaki , et al. October 1, 1	1996-10-01
Method of manufacturing monocrystalline thin-film Grant 4,801,351 - Awane , et al. January 31, 1	1989-01-31
Forming single crystal silicon on insulator by irradiating a laser beam having dual peak energy distribution onto polysilicon on a dielectric substrate having steps Grant 4,719,183 - Maekawa January 12, 1	1988-01-12
Vehicle headlamp Grant 4,506,315 - Maekawa , et al. March 19, 1	1985-03-19

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