loadpatents
Patent applications and USPTO patent grants for Maekawa; Hisayuki.The latest application filed is for "manufacturing method of high-voltage mos transistor".
Patent | Date |
---|---|
Semiconductor device and a method of manufacturing thereof Grant 7,754,572 - Maekawa July 13, 2 | 2010-07-13 |
Manufacturing method of high-voltage MOS transistor App 20070212842 - Maekawa; Hisayuki | 2007-09-13 |
Method for manufacturing semicondutor device App 20060263948 - Maekawa; Hisayuki | 2006-11-23 |
Semiconductor device and a method of manufacturing thereof App 20060151840 - Maekawa; Hisayuki | 2006-07-13 |
High-voltage MOS transistor Grant 6,974,997 - Maekawa December 13, 2 | 2005-12-13 |
High-voltage MOS transistor App 20030057460 - Maekawa, Hisayuki | 2003-03-27 |
uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.
While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.
All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.