Maegawa; Hitoshi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Maegawa; Hitoshi.The latest application filed is for "valve timing adjustment device".

Company Profile

1.10.10

Maegawa; Hitoshi - Nisshin JP
MAEGAWA; Hitoshi - Nisshin-city JP
Maegawa; Hitoshi - Nishio JP
MAEGAWA; Hitoshi - Nishio-city JP
Maegawa; Hitoshi - Osaka N/A JP
Maegawa; Hitoshi - Anan JP
MAEGAWA; Hitoshi - Anan-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Valve timing adjustment device Grant 11,242,775 - Aochi , et al. February 8, 2	2022-02-08
Valve Timing Adjustment Device App 20210087951 - AOCHI; Takanobu ; et al.	2021-03-25
Fuel injection valve and fuel injection valve controller Grant 9,856,839 - Kanbara , et al. January 2, 2	2018-01-02
Fuel Injection Valve And Fuel Injection Valve Controller App 20160356251 - KANBARA; Motoya ; et al.	2016-12-08
Therapeutic agent for pain Grant 8,975,298 - Maegawa March 10, 2	2015-03-10
Method for manufacturing nitride semiconductor laser element Grant 8,415,188 - Maegawa , et al. April 9, 2	2013-04-09
Method For Manufacturing Nitride Semiconductor Laser Element App 20120058585 - MAEGAWA; Hitoshi ; et al.	2012-03-08
Therapeutic Agent For Ophthalmic Disease App 20090082455 - Maegawa; Hitoshi	2009-03-26
Therapeutic Agent For Pain App 20090030078 - Maegawa; Hitoshi	2009-01-29
Point emission type light emitting element and concentrating point emission type light emitting element Grant 6,882,672 - Marutani , et al. April 19, 2	2005-04-19
Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate Grant 6,861,729 - Kozaki , et al. March 1, 2	2005-03-01
Therapeutic and/or preventive agents for diseases due to retinal ischemia App 20040067891 - Katsube, Nobuo ; et al.	2004-04-08
Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate Grant 6,627,520 - Kozaki , et al. September 30, 2	2003-09-30
Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate Grant 6,627,974 - Kozaki , et al. September 30, 2	2003-09-30
Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate App 20030160232 - Kozaki, Tokuya ; et al.	2003-08-28
Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate App 20030032288 - Kozaki, Tokuya ; et al.	2003-02-13
Point emission type light emitting element and concentrating point emission type light emittingelement App 20020167983 - Marutani, Yukitoshi ; et al.	2002-11-14
Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate App 20010053618 - Kozaki, Tokuya ; et al.	2001-12-20

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