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Patent applications and USPTO patent grants for Maeda; Tokuji.The latest application filed is for "melt surface position monitoring apparatus in silicon single crystal growth process".
Patent | Date |
---|---|
Melt surface position monitoring apparatus in silicon single crystal growth process Grant 8,012,258 - Hayakawa , et al. September 6, 2 | 2011-09-06 |
Melt surface position monitoring apparatus in silicon single crystal growth process App 20070277727 - Hayakawa; Hiroshi ;   et al. | 2007-12-06 |
Method for pulling a single crystal Grant 7,264,674 - Takanashi , et al. September 4, 2 | 2007-09-04 |
Method for pulling a single crystal App 20050022722 - Takanashi, Keiichi ;   et al. | 2005-02-03 |
Apparatus for pulling a single crystal App 20020029738 - Takanashi, Keiichi ;   et al. | 2002-03-14 |
Method for producing single App 20020029734 - Mizuta, Masahiko ;   et al. | 2002-03-14 |
Methods and a device for measuring melt surface temperature within apparatus for pulling a single crystal Grant 6,187,090 - Maeda , et al. February 13, 2 | 2001-02-13 |
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