Maeda; Takayoshi
Patent Applications and Registrations
Patent applications and USPTO patent grants for Maeda; Takayoshi.The latest application filed is for "substrate of gallium nitride single crystal and process for producing the same".
- Maeda; Takayoshi - Tottori JP
- Maeda; Takayoshi - Tottori-shi JP
- Maeda; Takayoshi - Nabari JP
- Maeda, Takayoshi - Nabari-shi JP
- Maeda; Takayoshi - Mie JP
- Maeda; Takayoshi - Hirakata JP
| Patent | Date |
|---|---|
| Substrate of gallium nitride single crystal and process for producing the same Grant 7,399,687 - Hiramatsu , et al. July 15, 2 | 2008-07-15 |
| Substrate of gallium nitride single crystal and process for producing the same App 20060172512 - Hiramatsu; Kazumasa ; et al. | 2006-08-03 |
| Method of manufacturing III-V group compound semiconductor Grant 6,946,308 - Hiramatsu , et al. September 20, 2 | 2005-09-20 |
| III-V compound semiconductor Grant 6,844,574 - Hiramatsu , et al. January 18, 2 | 2005-01-18 |
| Method for fabricating III-V group compound semiconductor Grant 6,756,246 - Hiramatsu , et al. June 29, 2 | 2004-06-29 |
| Method of manufacturing III-V group compound semiconductor App 20030211710 - Hiramatsu, Kazumasa ; et al. | 2003-11-13 |
| Method for fabricating III-V Group compound semiconductor App 20030045017 - Hiramatsu, Kazumasa ; et al. | 2003-03-06 |
| Group III-V compound semiconductor and method of producing the same Grant 6,503,610 - Hiramatsu , et al. January 7, 2 | 2003-01-07 |
| Group III-V compound semiconductor and method of producing the same App 20010031385 - Hiramatsu, Kazumasa ; et al. | 2001-10-18 |
| Epitaxially grown compound-semiconductor crystal Grant 5,332,451 - Hata , et al. July 26, 1 | 1994-07-26 |
| Apparatus for vapor-phase growth Grant 4,976,216 - Maeda , et al. December 11, 1 | 1990-12-11 |
| Power supply system Grant 4,533,987 - Tomofuji , et al. August 6, 1 | 1985-08-06 |
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