Madson; Gordon K.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Madson; Gordon K..The latest application filed is for "methods of making power semiconductor devices with thick bottom oxide layer".

Company Profile

0.10.14

Madson; Gordon K. - Riverton UT
Madson; Gordon K. - Herriman UT US
Madson; Gordon K. - Salt Lake City UT
Madson; Gordon K. - US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Methods related to power semiconductor devices with thick bottom oxide layers Grant 8,936,985 - Challa , et al. January 20, 2	2015-01-20
Method and structure for shielded gate trench FET Grant 8,497,549 - Madson July 30, 2	2013-07-30
Methods Of Making Power Semiconductor Devices With Thick Bottom Oxide Layer App 20120220091 - Challa; Ashok ; et al.	2012-08-30
Methods of making power semiconductor devices with thick bottom oxide layer Grant 8,143,124 - Challa , et al. March 27, 2	2012-03-27
Methods For Making Semiconductor Devices Using Nitride Consumption Locos Oxidation App 20100187602 - Woolsey; Debra S. ; et al.	2010-07-29
Structure and method for forming a minimum pitch trench-gate FET with heavy body region Grant 7,553,740 - Sharp , et al. June 30, 2	2009-06-30
Method and Structure for Shielded Gate Trench FET App 20090050959 - Madson; Gordon K.	2009-02-26
Integrated Hydrogen Anneal and Gate Oxidation for Improved Gate Oxide Integrity App 20080199995 - Woolsey; Debra Susan ; et al.	2008-08-21
Trenched Shield Gate Power Semiconductor Devices and Methods of Manufacture App 20080150020 - Challa; Ashok ; et al.	2008-06-26
Methods of Making Power Semiconductor Devices with Thick Bottom Oxide Layer App 20080138953 - Challa; Ashok ; et al.	2008-06-12
Power Semiconductor Devices Having Termination Structures and Methods of Manufacture App 20080135931 - Challa; Ashok ; et al.	2008-06-12
Structure and method for forming a minimum pitch trench-gate FET with heavy body region App 20060267088 - Sharp; Joelle ; et al.	2006-11-30
Power semiconductor devices and methods of manufacture App 20060214222 - Challa; Ashok ; et al.	2006-09-28
Power semiconductor devices and methods of manufacture App 20060214221 - Challa; Ashok ; et al.	2006-09-28
Power semiconductor devices and methods of manufacture App 20050167742 - Challa, Ashok ; et al.	2005-08-04
Hydrogen anneal for creating an enhanced trench for trench MOSFETS Grant 6,825,087 - Sharp , et al. November 30, 2	2004-11-30
Method of manufacturing a trench MOSFET using selective growth epitaxy Grant 6,635,534 - Madson October 21, 2	2003-10-21
Trench MOSFET formed using selective epitaxial growth App 20020102786 - Madson, Gordon K. ; et al.	2002-08-01
Method of manufacturing a trench MOSFET using selective growth epitaxy Grant 6,391,699 - Madson , et al. May 21, 2	2002-05-21
Method of manufacturing a trench mosfet using selective growth epitaxy App 20010049167 - Madson, Gordon K.	2001-12-06
Trench Seimconductor Devices Reduced Trench Pitch App 20010034109 - Madson, Gordon K. ; et al.	2001-10-25
Method of increasing trench density for semiconductor Grant 6,291,310 - Madson , et al. September 18, 2	2001-09-18

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