Madan, Arun

Patent Applications and Registrations

Patent applications and USPTO patent grants for Madan, Arun.The latest application filed is for "stable three-terminal and four-terminal solar cells and solar cell panels using thin-film silicon technology".

Company Profile

0.17.3

Madan, Arun - Golden CO
Madan; Arun - Birmingham MI
Madan; Arun - Moraga CA
Madan; Arun - Rochester MI

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Stable Three-Terminal and Four-Terminal Solar Cells and Solar Cell Panels Using Thin-Film Silicon Technology App 20050150542 - Madan, Arun	2005-07-14
Hot wire chemical vapor deposition method and apparatus using graphite hot rods Grant 6,427,622 - Madan , et al. August 6, 2	2002-08-06
Semiconductor vacuum deposition system and method having a reel-to-reel substrate cassette App 20010055888 - Madan, Arun ; et al.	2001-12-27
Hot wire chemical vapor deposition method and apparatus using graphite hot rods App 20010031541 - Madan, Arun ; et al.	2001-10-18
Hot wire chemical vapor deposition method and apparatus using graphite hot rods Grant 6,214,706 - Madan , et al. April 10, 2	2001-04-10
Solar cell substrate and process for its production Grant 5,252,140 - Kobayashi , et al. October 12, 1	1993-10-12
Modular continuous vapor deposition system Grant 5,016,562 - Madan , et al. May 21, 1	1991-05-21
Solar cell fabrication method Grant 4,865,999 - Xi , et al. September 12, 1	1989-09-12
Fluorinated precursors from which to fabricate amorphous semiconductor material Grant 4,839,312 - Ovshinsky , et al. * June 13, 1	1989-06-13
Solar cell substrate Grant 4,808,462 - Yaba , et al. February 28, 1	1989-02-28
Thin film deposition apparatus including a vacuum transport mechanism Grant 4,763,602 - Madan , et al. August 16, 1	1988-08-16
Wide band gap semiconductor alloy material Grant 4,710,786 - Ovshinsky , et al. * December 1, 1	1987-12-01
Amorphous semiconductors equivalent to crystalline semiconductors Grant 4,520,380 - Ovshinsky , et al. May 28, 1	1985-05-28
P-type semiconductor material having a wide band gap Grant 4,469,715 - Madan September 4, 1	1984-09-04
P-Type semiconductor material having a wide band gap Grant 4,441,113 - Madan April 3, 1	1984-04-03
Amorphous silicon solar cells incorporating an insulating layer in the body of amorphous silicon and a method of suppressing the back diffusion of holes into an N-type region Grant 4,415,760 - Madan November 15, 1	1983-11-15
Amorphous semiconductors equivalent to crystalline semiconductors Grant 4,409,605 - Ovshinsky , et al. October 11, 1	1983-10-11
Compensated amorphous silicon solar cell incorporating an insulating layer Grant 4,398,054 - Madan August 9, 1	1983-08-09
Compensated amorphous silicon solar cell Grant 4,396,793 - Madan August 2, 1	1983-08-02
Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process Grant 4,226,898 - Ovshinsky , et al. October 7, 1	1980-10-07

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