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Patent applications and USPTO patent grants for Ma; William H..The latest application filed is for "dual gate logic device".
Patent | Date |
---|---|
Increased capacitance trench capacitor Grant 6,936,879 - Furukawa , et al. August 30, 2 | 2005-08-30 |
Dual gate logic device Grant 6,891,226 - Furukawa , et al. May 10, 2 | 2005-05-10 |
Dual gate logic device App 20030201500 - Furukawa, Toshiharu ;   et al. | 2003-10-30 |
Increased capacitance trench capacitor Grant 6,620,675 - Furukawa , et al. September 16, 2 | 2003-09-16 |
Increased capacitance trench capacitor App 20030170952 - Furukawa, Toshiharu ;   et al. | 2003-09-11 |
Method of manufacturing dual gate logic devices Grant 6,596,597 - Furukawa , et al. July 22, 2 | 2003-07-22 |
Increased capacitance trench capacitor App 20030060005 - Furukawa, Toshiharu ;   et al. | 2003-03-27 |
Activating in-situ doped gate on high dielectric constant materials App 20030025167 - Park, Heemyong ;   et al. | 2003-02-06 |
Method of fabricating SiO2 spacers and annealing caps Grant 6,512,266 - Deshpande , et al. January 28, 2 | 2003-01-28 |
Method Of Fabricating Sio2 Spacers And Annealing Caps App 20030011080 - Deshpande, Sadanand V. ;   et al. | 2003-01-16 |
Dual gate logic device App 20020187610 - Furukawa, Toshiharu ;   et al. | 2002-12-12 |
Method for introducing dopants into semiconductor devices using a germanium oxide sacrificial layer Grant 6,333,245 - Furukawa , et al. December 25, 2 | 2001-12-25 |
Dram Cell With Active Area Reclaim App 20010042880 - DIVAKARUNI, RAMA ;   et al. | 2001-11-22 |
Method of fabricating a stack capacitor DRAM App 20010035551 - Kotecki, David E. ;   et al. | 2001-11-01 |
Process for building borderless bitline, wordline amd DRAM structure Grant 6,261,933 - Hakey , et al. July 17, 2 | 2001-07-17 |
DRAM stack capacitor with vias and conductive connection extending from above conductive lines to the substrate Grant 6,262,450 - Kotecki , et al. July 17, 2 | 2001-07-17 |
Trench storage dynamic random access memory cell with vertical transfer device Grant 6,225,158 - Furukawa , et al. May 1, 2 | 2001-05-01 |
Resist image reversal by means of spun-on-glass Grant 6,221,562 - Boyd , et al. April 24, 2 | 2001-04-24 |
Method for manufacturing high performance MOSFET device with raised source and drain Grant 6,207,540 - Furukawa , et al. March 27, 2 | 2001-03-27 |
Method for a controlled bottle trench for a dram storage node Grant 6,190,988 - Furukawa , et al. February 20, 2 | 2001-02-20 |
Trench storage dynamic random access memory cell with vertical transfer device Grant 6,184,549 - Furukawa , et al. February 6, 2 | 2001-02-06 |
Process for building borderless bitline, wordline and DRAM structure and resulting structure Grant 6,175,128 - Hakey , et al. January 16, 2 | 2001-01-16 |
Trench separator for self-defining discontinuous film Grant 6,150,230 - Kotecki , et al. November 21, 2 | 2000-11-21 |
Method for varying x-ray hybrid resist space dimensions Grant 6,014,422 - Boyd , et al. January 11, 2 | 2000-01-11 |
Adherent separator for self-defining discontinuous film Grant 6,002,575 - Kotecki , et al. December 14, 1 | 1999-12-14 |
Five square vertical dynamic random access memory cell Grant 5,949,700 - Furukawa , et al. September 7, 1 | 1999-09-07 |
Overhanging separator for self-defining stacked capacitor Grant 5,796,573 - Kotecki , et al. August 18, 1 | 1998-08-18 |
Fabrication method for high-capacitance storage node structures Grant 5,776,660 - Hakey , et al. July 7, 1 | 1998-07-07 |
Isolated sidewall capacitor with dual dielectric Grant 5,585,998 - Kotecki , et al. December 17, 1 | 1996-12-17 |
Method for passivating an undercut in semiconductor device preparation Grant 4,667,395 - Ahlgren , et al. May 26, 1 | 1987-05-26 |
Cathode for etching Grant 4,350,578 - Frieser , et al. September 21, 1 | 1982-09-21 |
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