Ma; Sean T.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ma; Sean T..The latest application filed is for "isolation regions in integrated circuit structures".

Company Profile

51.31.59

Ma; Sean T. - Portland OR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Source/drain regions in integrated circuit structures Grant 11,450,738 - Ma , et al. September 20, 2	2022-09-20
Source/drain regions in integrated circuit structures Grant 11,450,736 - Ma , et al. September 20, 2	2022-09-20
Transistor device with channel recess structure and method of providing same Grant 11,444,204 - Sharma , et al. September 13, 2	2022-09-13
Field effect transistors with wide bandgap materials Grant 11,444,159 - Ma , et al. September 13, 2	2022-09-13
Device contact sizing in integrated circuit structures Grant 11,430,866 - Bouche , et al. August 30, 2	2022-08-30
Group III-V semiconductor devices having dual workfunction gate electrodes Grant 11,424,335 - Ma , et al. August 23, 2	2022-08-23
Isolation Regions In Integrated Circuit Structures App 20220231121 - Bouche; Guillaume ; et al.	2022-07-21
Source/drain recess etch stop layers and bottom wide-gap cap for III-V MOSFETs Grant 11,367,789 - Huang , et al. June 21, 2	2022-06-21
Field effect transistors with reduced electric field by thickening dielectric on the drain side Grant 11,362,188 - Basu , et al. June 14, 2	2022-06-14
Top-gate doped thin film transistor Grant 11,362,215 - Sharma , et al. June 14, 2	2022-06-14
Field Effect Transistors With Gate Electrode Self-aligned To Semiconductor Fin App 20220181442 - Ma; Sean T. ; et al.	2022-06-09
Isolation regions in integrated circuit structures Grant 11,342,409 - Bouche , et al. May 24, 2	2022-05-24
Source to channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) Grant 11,335,796 - Huang , et al. May 17, 2	2022-05-17
Field effect transistors with gate electrode self-aligned to semiconductor fin Grant 11,276,755 - Ma , et al. March 15, 2	2022-03-15
Transistor With Isolation Below Source And Drain App 20220028972 - RACHMADY; Willy ; et al.	2022-01-27
Source/drain Regions In Integrated Circuit Structures App 20210384307 - Ma; Sean T. ; et al.	2021-12-09
Non-planar Transistor Arrangements With Asymmetric Gate Enclosures App 20210384299 - Ma; Sean T. ; et al.	2021-12-09
Transistor structures having multiple threshold voltage channel materials Grant 11,177,255 - Ma , et al. November 16, 2	2021-11-16
Vertically Stacked Transistors In A Fin App 20210351078 - Lilak; Aaron D. ; et al.	2021-11-11
Transistor with isolation below source and drain Grant 11,171,207 - Rachmady , et al. November 9, 2	2021-11-09
Group III-V semiconductor devices having asymmetric source and drain structures Grant 11,164,747 - Ma , et al. November 2, 2	2021-11-02
Source/drain Regions In Integrated Circuit Structures App 20210305365 - Ma; Sean T. ; et al.	2021-09-30
Device Contact Sizing In Integrated Circuit Structures App 20210305370 - Bouche; Guillaume ; et al.	2021-09-30
Isolation Regions In Integrated Circuit Structures App 20210305362 - Bouche; Guillaume ; et al.	2021-09-30
Gate Spacing In Integrated Circuit Structures App 20210305244 - Bouche; Guillaume ; et al.	2021-09-30
Device Contacts In Integrated Circuit Structures App 20210305380 - Bouche; Guillaume ; et al.	2021-09-30
Source/drain Regions In Integrated Circuit Structures App 20210305367 - Ma; Sean T. ; et al.	2021-09-30
Finfet Transistor Having A Doped Subfin Structure To Reduce Channel To Substrate Leakage App 20210296180 - DEWEY; Gilbert ; et al.	2021-09-23
Transistor Arrangements With Metal Gate Cuts And Recessed Power Rails App 20210280708 - Wei; Andy Chih-Hung ; et al.	2021-09-09
FINFET transistor having a doped subfin structure to reduce channel to substrate leakage Grant 11,107,890 - Dewey , et al. August 31, 2	2021-08-31
Vertically stacked transistors in a pin Grant 11,075,119 - Lilak , et al. July 27, 2	2021-07-27
Art trench spacers to enable fin release for non-lattice matched channels Grant 11,049,773 - Dewey , et al. June 29, 2	2021-06-29
High-mobility field effect transistors with wide bandgap fin cladding Grant 10,957,769 - Ma , et al. March 23, 2	2021-03-23
Semiconductor device with released source and drain Grant 10,903,364 - Rachmady , et al. January 26, 2	2021-01-26
Device isolation by fixed charge Grant 10,892,335 - Ma , et al. January 12, 2	2021-01-12
Group III-V material transistors employing nitride-based dopant diffusion barrier layer Grant 10,886,408 - Mohapatra , et al. January 5, 2	2021-01-05
Transistors with non-vertical gates Grant 10,879,365 - Huang , et al. December 29, 2	2020-12-29
Vertically Stacked Memory Elements With Air Gap App 20200403033 - Lilak; Aaron D. ; et al.	2020-12-24
Stiff quantum layers to slow and or stop defect propagation Grant 10,861,939 - Metz , et al. December 8, 2	2020-12-08
Field Effect Transistors With Gate Electrode Self-aligned To Semiconductor Fin App 20200321435 - Ma; Sean T. ; et al.	2020-10-08
High-mobility Field Effect Transistors With Wide Bandgap Fin Cladding App 20200321439 - Ma; Sean T. ; et al.	2020-10-08
Differential work function between gate stack metals to reduce parasitic capacitance Grant 10,797,150 - Ma , et al. October 6, 2	2020-10-06
Dual Transistor Gate Workfunctions And Related Apparatuses, Systems, And Methods App 20200312973 - MA; Sean T. ; et al.	2020-10-01
Stacked Transistors With Different Crystal Orientations In Different Device Strata App 20200295127 - Mannebach; Ehren ; et al.	2020-09-17
Transistors With High Density Channel Semiconductor Over Dielectric Material App 20200287024 - Dewey; Gilbert ; et al.	2020-09-10
Source To Channel Junction For Iii-v Metal-oxide-semiconductor Field Effect Transistors (mosfets) App 20200287036 - HUANG; Cheng-Ying ; et al.	2020-09-10
Reducing Off-state Leakage In Semiconductor Devices App 20200279910 - Basu; Dipanjan ; et al.	2020-09-03
Transistor With Isolation Below Source And Drain App 20200279916 - Rachmady; Willy ; et al.	2020-09-03
Transistor Structures Having Multiple Threshold Voltage Channel Materials App 20200279845 - Ma; Sean T. ; et al.	2020-09-03
Reduced Electric Field By Thickening Dielectric On The Drain Side App 20200279931 - Basu; Dipanjan ; et al.	2020-09-03
Group Iii-v Semiconductor Devices Having Dual Workfunction Gate Electrodes App 20200227533 - MA; Sean T. ; et al.	2020-07-16
3d 1t1c Stacked Dram Structure And Method To Fabricate App 20200227416 - LILAK; Aaron ; et al.	2020-07-16
Charge Trap Layer In Back-gated Thin-film Transistors App 20200220024 - Sharma; Abhishek A. ; et al.	2020-07-09
Group Iii-v Semiconductor Devices Having Asymmetric Source And Drain Structures App 20200203169 - MA; Sean T. ; et al.	2020-06-25
Vertical Memory Cells App 20200194435 - LILAK; Aaron ; et al.	2020-06-18
Device Isolation By Fixed Charge App 20200185501 - Ma; Sean T. ; et al.	2020-06-11
Thin Film Transistor With Charge Trap Layer App 20200185504 - Sharma; Abhishek A. ; et al.	2020-06-11
Reduced transistor resistance using doped layer Grant 10,651,313 - Huang , et al.	2020-05-12
Transistor With Wide Bandgap Channel And Narrow Bandgap Source/drain App 20200144374 - MA; Sean T. ; et al.	2020-05-07
III-V finfet transistor with V-groove S/D profile for improved access resistance Grant 10,644,137 - Rachmady , et al.	2020-05-05
FINFET transistor having a tapered subfin structure Grant 10,636,912 - Dewey , et al.	2020-04-28
Ferroelectric Gate Stack For Band-to-band Tunneling Reduction App 20200098925 - Dewey; Gilbert ; et al.	2020-03-26
High Performance Semiconductor Oxide Material Channel Regions For Nmos App 20200098753 - Dewey; Gilbert ; et al.	2020-03-26
Structures And Methods For Memory Cells App 20200083225 - Ma; Sean T. ; et al.	2020-03-12
Field Effect Transistors With Wide Bandgap Materials App 20200066843 - MA; Sean T. ; et al.	2020-02-27
An Indium-containing Fin Of A Transistor Device With An Indium-rich Core App 20200066855 - MOHAPATRA; Chandra S. ; et al.	2020-02-27
Subfin Leakage Suppression Using Fixed Charge App 20200044059 - Ma; Sean T. ; et al.	2020-02-06
Dopant diffusion barrier for source/drain to curb dopant atom diffusion Grant 10,529,808 - Mohapatra , et al. J	2020-01-07
Dielectric Lining Layers For Semiconductor Devices App 20200006501 - Rachmady; Willy ; et al.	2020-01-02
Transistors With Non-vertical Gates App 20200006510 - Huang; Cheng-Ying ; et al.	2020-01-02
A Finfet Transistor Having A Tapered Subfin Structure App 20190341481 - DEWEY; Gilbert ; et al.	2019-11-07
Vertically Stacked Transistors In A Pin App 20190326175 - Lilak; Aaron D. ; et al.	2019-10-24
Top-gate Doped Thin Film Transistor App 20190305138 - Sharma; Abhishek A. ; et al.	2019-10-03
Transistor Device With Channel Recess Structure And Method Of Providing Same App 20190305101 - Sharma; Abhishek A. ; et al.	2019-10-03
Source/drain Recess Etch Stop Layers And Bottom Wide-gap Cap For Iii-v Mosfets App 20190296145 - HUANG; Cheng-Ying ; et al.	2019-09-26
High mobility field effect transistors with a band-offset semiconductor source/drain spacer Grant 10,411,007 - Dewey , et al. Sept	2019-09-10
Art Trench Spacers To Enable Fin Release For Non-lattice Matched Channels App 20190267289 - DEWEY; Gilbert ; et al.	2019-08-29
Reduced Transistor Resistance Using Doped Layer App 20190214500 - Huang; Cheng-Ying ; et al.	2019-07-11
High mobility field effect transistors with a retrograded semiconductor source/drain Grant 10,340,374 - Dewey , et al.	2019-07-02
Group Iii-v Material Transistors Employing Nitride-based Dopant Diffusion Barrier Layer App 20190198658 - Mohapatra; Chandra S. ; et al.	2019-06-27
Stiff Quantum Layers To Slow And Or Stop Defect Propagation App 20190189753 - Metz; Matthew ; et al.	2019-06-20
Semiconductor Device With Released Source And Drain App 20190172941 - RACHMADY; Willy ; et al.	2019-06-06
Finfet Transistor With Channel Stress Induced Via Stressor Material Inserted Into Fin Plug Region Enabled By Backside Reveal App 20190172950 - LILAK; Aaron D. ; et al.	2019-06-06
Iii-v Finfet Transistor With V-groove S/d Profile For Improved Access Resistance App 20190148512 - RACHMADY; Willy ; et al.	2019-05-16
A Finfet Transistor Having A Doped Subfin Structure To Reduce Channel To Substrate Leakage App 20190140054 - DEWEY; Gilbert ; et al.	2019-05-09
Dopant Diffusion Barrier For Source/drain To Curb Dopant Atom Diffusion App 20190035897 - MOHAPATRA; Chandra S. ; et al.	2019-01-31
High Mobility Field Effect Transistors With A Band-offset Semiconductor Source/drain Spacer App 20180350798 - Dewey; Gilbert ; et al.	2018-12-06
Differential Work Function Between Gate Stack Metals To Reduce Parasitic Capacitance App 20180315827 - MA; Sean T. ; et al.	2018-11-01
High Mobility Field Effect Transistors With A Retrograded Semiconductor Source/drain App 20180261694 - Dewey; Gilbert ; et al.	2018-09-13
Resistance Reduction In Transistors Having Epitaxially Grown Source/drain Regions App 20180151732 - MEHANDRU; RISHABH ; et al.	2018-05-31

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