Ma; Chih-Yu

Patent Applications and Registrations

Patent applications and USPTO patent grants for Ma; Chih-Yu.The latest application filed is for "semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof".

Company Profile

12.8.12

Ma; Chih-Yu - Hsinchu TW
Ma; Chih-Yu - Hsin-Chu TW
Ma; Chih-Yu - Taitung County TW

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor Device with Multi-Layered Source/Drain Regions Having Different Dopant Concentrations and Manufacturing Method Thereof App 20220262681 - Ma; Chih-Yu ; et al.	2022-08-18
Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof Grant 11,342,228 - Ma , et al. May 24, 2	2022-05-24
Semiconductor Device and Methods of Forming Same App 20210257496 - Ma; Chih-Yu ; et al.	2021-08-19
Semiconductor device and methods of forming same Grant 10,991,826 - Ma , et al. April 27, 2	2021-04-27
Semiconductor Device With Multi-layered Source/drain Regions Having Different Dopant Concentrations And Manufacturing Method Thereof App 20200365720 - Ma; Chih-Yu ; et al.	2020-11-19
Semiconductor Device and Methods of Forming Same App 20200350435 - Ma; Chih-Yu ; et al.	2020-11-05
Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof Grant 10,734,524 - Ma , et al.	2020-08-04
Semiconductor device and methods of forming same Grant 10,720,530 - Ma , et al.	2020-07-21
Semiconductor Device and Methods of Forming Same App 20200105934 - Ma; Chih-Yu ; et al.	2020-04-02
FinFET EPI Channels Having Different Heights on a Stepped Substrate App 20200098645 - Lee; Cheng-Han ; et al.	2020-03-26
Dopant Concentration Boost in Epitaxially Formed Material App 20200091343 - Ma; Chih-Yu ; et al.	2020-03-19
FinFET EPI channels having different heights on a stepped substrate Grant 10,510,618 - Lee , et al. Dec	2019-12-17
Dopant concentration boost in epitaxially formed material Grant 10,490,661 - Ma , et al. Nov	2019-11-26
Semiconductor Device With Multi-layered Source/drain Regions Having Different Dopant Concentrations And Manufacturing Method The App 20190334029 - Ma; Chih-Yu ; et al.	2019-10-31
Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof Grant 10,347,764 - Ma , et al. July 9, 2	2019-07-09
Semiconductor Device And Method App 20190006507 - Ma; Chih-Yu ; et al.	2019-01-03
Dopant Concentration Boost in Epitaxially Formed Material App 20180151730 - Ma; Chih-Yu ; et al.	2018-05-31
FinFET EPI Channels Having Different Heights on a Stepped Substrate App 20180114729 - Lee; Cheng-Han ; et al.	2018-04-26
Wafer supporting structure, and device and method for manufacturing semiconductor Grant 9,721,826 - Ma , et al. August 1, 2	2017-08-01
Wafer Supporting Structure, And Device And Method For Manufacturing Semiconductor App 20170213759 - MA; Chih-Yu ; et al.	2017-07-27

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