M-Mos Sdn.Bhd
Patent Applications and Registrations
Patent applications and USPTO patent grants for M-Mos Sdn.Bhd.The latest application filed is for "high density trench mosfet with reduced on-resistance".
- M-Mos Sdn.Bhd - MY MY
- M-MOS Sdn. Bhd. -
| Patent | Date |
|---|---|
| Elimination of gate oxide weak spot in deep trench Grant 8,115,252 - Hshieh , et al. February 14, 2 | 2012-02-14 |
| High density trench MOSFET with reduced on-resistance App 20070114599 - Hshieh; Fwu-Iuan | 2007-05-24 |
| Gate contact and runners for high density trench MOSFET App 20060273390 - Hshieh; Fwu-Iuan ; et al. | 2006-12-07 |
| High density trench MOSFET with low gate resistance and reduced source contact space App 20060273382 - Hshieh; Fwu-Iuan | 2006-12-07 |
| Source contact and metal scheme for high density trench MOSFET App 20060273380 - Hshieh; Fwu-Iuan | 2006-12-07 |
| High density hybrid MOSFET device App 20060273383 - Hshieh; Fwu-Iuan | 2006-12-07 |
| Structure for avalanche improvement of ultra high density trench MOSFET App 20060273384 - Hshieh; Fwu-Iuan | 2006-12-07 |
| Elimination of gate oxide weak spot in deep trench App 20060255402 - Hshieh; Fwu-Iuan ; et al. | 2006-11-16 |
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