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Conformal nitridation of one or more fin-type transistor layers
Grant 9,698,269 - Tong , et al. July 4, 2 | 2017-07-04 |
Conformal Nitridation Of One Or More Fin-type Transistor Layers
App 20160190324 - TONG; Wei Hua ; et al. | 2016-06-30 |
Conformal nitridation of one or more fin-type transistor layers
Grant 9,312,145 - Tong , et al. April 12, 2 | 2016-04-12 |
Dual high-K oxides with SiGe channel
Grant RE45,955 - Luo , et al. March 29, 2 | 2016-03-29 |
Depositing an etch stop layer before a dummy cap layer to improve gate performance
Grant 9,209,258 - Zhou , et al. December 8, 2 | 2015-12-08 |
Forming a gate by depositing a thin barrier layer on a titanium nitride cap
Grant 9,202,697 - Luo , et al. December 1, 2 | 2015-12-01 |
Devices And Methods Of Forming Finfets With Self Aligned Fin Formation
App 20150333067 - WAN; Jing ; et al. | 2015-11-19 |
Devices and methods of forming finFETs with self aligned fin formation
Grant 9,147,696 - Wan , et al. September 29, 2 | 2015-09-29 |
Conformal Nitridation Of One Or More Fin-type Transistor Layers
App 20150255277 - TONG; Wei Hua ; et al. | 2015-09-10 |
Depositing An Etch Stop Layer Before A Dummy Cap Layer To Improve Gate Performance
App 20150249136 - ZHOU; Feng ; et al. | 2015-09-03 |
Devices And Methods Of Forming Finfets With Self Aligned Fin Formation
App 20150091094 - WAN; Jing ; et al. | 2015-04-02 |
Systems And Methods For Fabricating Gate Structures For Semiconductor Devices
App 20150024585 - LUO; Tien-Ying ; et al. | 2015-01-22 |
Electronic device with a gate electrode having at least two portions
Grant 8,659,087 - Adetutu , et al. February 25, 2 | 2014-02-25 |
Dual high-k oxides with sige channel
Grant 8,017,469 - Luo , et al. September 13, 2 | 2011-09-13 |
Multilayer Silicon Nitride Deposition For A Semiconductor Device
App 20110210401 - Junker; Kurt H. ; et al. | 2011-09-01 |
Method of forming a gate dielectric by in-situ plasma
Grant 7,981,808 - Luo , et al. July 19, 2 | 2011-07-19 |
Semiconductor structure pattern formation
Grant 7,829,447 - Mathew , et al. November 9, 2 | 2010-11-09 |
Method of removing defects from a dielectric material in a semiconductor
Grant 7,776,731 - Junker , et al. August 17, 2 | 2010-08-17 |
Method for forming a deposited oxide layer
Grant 7,767,588 - Luo , et al. August 3, 2 | 2010-08-03 |
Dual High-k Oxides With Sige Channel
App 20100184260 - Luo; Tien-Ying ; et al. | 2010-07-22 |
Method of forming a gate dielectric
Grant 7,741,183 - Luo , et al. June 22, 2 | 2010-06-22 |
Multilayer silicon nitride deposition for a semiconductor device
Grant 7,700,499 - Junker , et al. April 20, 2 | 2010-04-20 |
Electronic Device With A Gate Electrode Having At Least Two Portions
App 20100090287 - Adetutu; Olubunmi O. ; et al. | 2010-04-15 |
Method Of Forming A Gate Dielectric By In-situ Plasma
App 20100081290 - Luo; Tien Ying ; et al. | 2010-04-01 |
Method of forming a semiconductor device with multiple tensile stressor layers
Grant 7,678,698 - Bo , et al. March 16, 2 | 2010-03-16 |
Process of forming an electronic device including active regions and gate electrodes of different compositions overlying the active regions
Grant 7,651,935 - Adetutu , et al. January 26, 2 | 2010-01-26 |
Method Of Forming A Gate Dielectric
App 20090221120 - Luo; Tien Ying ; et al. | 2009-09-03 |
Method Of Removing Defects From A Dielectric Material In A Semiconductor
App 20090075434 - Junker; Kurt H. ; et al. | 2009-03-19 |
Semiconductor Device With Multiple Tensile Stressor Layers And Method
App 20080272411 - Bo; Xiangzheng ; et al. | 2008-11-06 |
Method for removing nanoclusters from selected regions
Grant 7,445,984 - Rao , et al. November 4, 2 | 2008-11-04 |
Method for retaining nanocluster size and electrical characteristics during processing
Grant 7,432,158 - Rao , et al. October 7, 2 | 2008-10-07 |
Multilayer silicon nitride deposition for a semiconductor device
App 20080173908 - Junker; Kurt H. ; et al. | 2008-07-24 |
Multilayer silicon nitride deposition for a semiconductor device
App 20080173986 - Junker; Kurt H. ; et al. | 2008-07-24 |
Method of making a nitrided gate dielectric
Grant 7,402,472 - Lim , et al. July 22, 2 | 2008-07-22 |
Method For Removing Nanoclusters From Selected Regions
App 20080026526 - Rao; Rajesh A. ; et al. | 2008-01-31 |
Semiconductor Structure Pattern Formation
App 20070269969 - Mathew; Leo ; et al. | 2007-11-22 |
Method For Forming A Deposited Oxide Layer
App 20070202645 - Luo; Tien Ying ; et al. | 2007-08-30 |
Method for forming a deposited oxide layer
App 20070202708 - Luo; Tien Ying ; et al. | 2007-08-30 |
Semiconductor device and method for incorporating a halogen in a dielectric
App 20070190711 - Luo; Tien Ying ; et al. | 2007-08-16 |
Electronic device with a gate electrode having at least two portions and a process for forming the electronic device
App 20070069311 - Adetutu; Olubunmi O. ; et al. | 2007-03-29 |
Multi-layer dielectric containing diffusion barrier material
Grant 7,144,825 - Adetutu , et al. December 5, 2 | 2006-12-05 |
Method of making a nitrided gate dielectric
App 20060194423 - Lim; Sangwoo ; et al. | 2006-08-31 |
Plasma impurification of a metal gate in a semiconductor fabrication process
App 20060084217 - Luo; Tien Ying ; et al. | 2006-04-20 |
Method of making a high quality thin dielectric layer
Grant 7,001,852 - Luo , et al. February 21, 2 | 2006-02-21 |
High quality thin dielectric layer and method of making same
App 20050245019 - Luo, Tien-Ying ; et al. | 2005-11-03 |
Radical oxidation and/or nitridation during metal oxide layer deposition process
Grant 6,884,685 - Luo , et al. April 26, 2 | 2005-04-26 |
Multi-layer dielectric containing diffusion barrier material
App 20050085092 - Adetutu, Olubunmi O. ; et al. | 2005-04-21 |
Radical oxidation and/or nitridation during metal oxide layer deposition process
App 20040161899 - Luo, Tien Ying ; et al. | 2004-08-19 |
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