Luo; Lee

Patent Applications and Registrations

Patent applications and USPTO patent grants for Luo; Lee.The latest application filed is for "multi-station plasma reactor with multiple plasma regions".

Company Profile

0.30.22

Luo; Lee - Shanghai CN
Luo; Lee - Fremont CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Multi-station plasma reactor with multiple plasma regions Grant 8,336,488 - Chen , et al. December 25, 2	2012-12-25
Tungsten nitride atomic layer deposition processes Grant 7,745,329 - Wang , et al. June 29, 2	2010-06-29
Methods and devices to reduce defects in dielectric stack structures Grant 7,608,300 - Bencher , et al. October 27, 2	2009-10-27
Multi-station Plasma Reactor With Multiple Plasma Regions App 20090139453 - CHEN; AIHUA ; et al.	2009-06-04
Tungsten Nitride Atomic Layer Deposition Processes App 20080305629 - Wang; Shulin ; et al.	2008-12-11
Methods and devices to reduce defects in dielectric stack structures App 20080257864 - Bencher; Christopher Dennis ; et al.	2008-10-23
Tungsten nitride atomic layer deposition processes Grant 7,429,516 - Wang , et al. September 30, 2	2008-09-30
Method of forming a controlled and uniform lightly phosphorous doped silicon film Grant 7,335,266 - Fu , et al. February 26, 2	2008-02-26
Tungsten Nitride Atomic Layer Deposition Processes App 20070020924 - Wang; Shulin ; et al.	2007-01-25
Cyclical deposition of tungsten nitride for metal oxide gate electrode Grant 7,115,499 - Wang , et al. October 3, 2	2006-10-03
Method of forming a controlled and uniform lightly phosphorous doped silicon film App 20060024926 - Fu; Li ; et al.	2006-02-02
Method of forming a controlled and uniform lightly phosphorous doped silicon film Grant 6,982,214 - Fu , et al. January 3, 2	2006-01-03
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene Grant 6,949,203 - Hsieh , et al. September 27, 2	2005-09-27
Cyclical deposition of tungsten nitride for metal oxide gate electrode App 20050176240 - Wang, Shulin ; et al.	2005-08-11
Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber Grant 6,884,464 - Luo , et al. April 26, 2	2005-04-26
Methods and devices to reduce defects in dielectric stack structures App 20050045099 - Bencher, Christopher Dennis ; et al.	2005-03-03
Cyclical deposition of tungsten nitride for metal oxide gate electrode Grant 6,833,161 - Wang , et al. December 21, 2	2004-12-21
Integrated equipment set for forming a low K dielectric interconnect on a substrate App 20040206621 - Li, Hongwen ; et al.	2004-10-21
Emissivity-change-free pumping plate kit in a single wafer chamber Grant 6,802,906 - Jin , et al. October 12, 2	2004-10-12
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene Grant 6,793,835 - Luo , et al. September 21, 2	2004-09-21
Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber App 20040086640 - Luo, Lee ; et al.	2004-05-06
Method of controlling the crystal structure of polycrystalline silicon Grant 6,726,955 - Wang , et al. April 27, 2	2004-04-27
Method of forming a controlled and uniform lightly phosphorous doped silicon film App 20040063301 - Fu, Li ; et al.	2004-04-01
Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD Grant 6,713,127 - Subramony , et al. March 30, 2	2004-03-30
Seedless method of forming a silicon germanium layer on a gate dielectric layer App 20040009680 - Luo, Lee ; et al.	2004-01-15
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene App 20030164354 - Hsieh, Chang-Lin ; et al.	2003-09-04
Cyclical deposition of tungsten nitride for metal oxide gate electrode App 20030161952 - Wang, Shulin ; et al.	2003-08-28
Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD App 20030138562 - Subramony, Janardhanan Anand ; et al.	2003-07-24
Method of annealing an oxide film App 20030124873 - Xing, Guangcai ; et al.	2003-07-03
Method and apparatus for forming silicon containing films App 20030124818 - Luo, Lee ; et al.	2003-07-03
Emissivity-change-free pumping plate kit in a single wafer chamber Grant 6,582,522 - Luo , et al. June 24, 2	2003-06-24
Method of making a transistor, in particular spacers of the transistor Grant 6,566,183 - Chen , et al. May 20, 2	2003-05-20
Method of forming a silicon nitride layer on a substrate Grant 6,559,074 - Chen , et al. May 6, 2	2003-05-06
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene App 20030057179 - Luo, Lee ; et al.	2003-03-27
Cycling deposition of low temperature films in a cold wall single wafer process chamber App 20030059535 - Luo, Lee ; et al.	2003-03-27
System level in-situ integrated dielectric etch process particularly useful for copper dual damascene Grant 6,500,357 - Luo , et al. December 31, 2	2002-12-31
Doped Silicon Deposition Process In Resistively Heated Single Wafer Chamber App 20020173127 - Wang, Shulin ; et al.	2002-11-21
Emissivity-change-free pumping plate kit in a single wafer chamber App 20020137312 - Luo, Lee ; et al.	2002-09-26
Emissivity-change-free pumping plate kit in a single wafer chamber App 20020127508 - Jin, Xiaoliang ; et al.	2002-09-12
Plasma treatment of titanium nitride formed by chemical vapor deposition Grant 6,270,859 - Zhao , et al. August 7, 2	2001-08-07
Plasma Treatment Of Titanium Nitride Formed By Chemical Vapor Deposition App 20010004478 - ZHAO, JUN ; et al.	2001-06-21
Chemical vapor deposition vaporizer Grant 6,210,485 - Zhao , et al. April 3, 2	2001-04-03
High temperature, high flow rate chemical vapor deposition apparatus and related methods Grant 6,189,482 - Zhao , et al. February 20, 2	2001-02-20
Apparatus for substrate processing with improved throughput and yield Grant 6,129,044 - Zhao , et al. October 10, 2	2000-10-10
Method for depositing barium strontium titanate Grant 6,077,562 - Dornfest , et al. June 20, 2	2000-06-20
High temperature, high deposition rate process and apparatus for depositing titanium layers Grant 6,051,286 - Zhao , et al. April 18, 2	2000-04-18
Method for substrate processing with improved throughput and yield Grant 5,993,916 - Zhao , et al. November 30, 1	1999-11-30
Apparatus for ceramic pedestal and metal shaft assembly Grant 5,994,678 - Zhao , et al. November 30, 1	1999-11-30
Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment Grant 5,983,906 - Zhao , et al. November 16, 1	1999-11-16
High temperature ceramic heater assembly with RF capability and related methods Grant 5,968,379 - Zhao , et al. October 19, 1	1999-10-19
Removable pumping channel liners within a chemical vapor deposition chamber Grant 5,964,947 - Zhao , et al. October 12, 1	1999-10-12
Thermally floating pedestal collar in a chemical vapor deposition chamber Grant 5,846,332 - Zhao , et al. December 8, 1	1998-12-08

uspto.report is an independent third-party trademark research tool that is not affiliated, endorsed, or sponsored by the United States Patent and Trademark Office (USPTO) or any other governmental organization. The information provided by uspto.report is based on publicly available data at the time of writing and is intended for informational purposes only.

While we strive to provide accurate and up-to-date information, we do not guarantee the accuracy, completeness, reliability, or suitability of the information displayed on this site. The use of this site is at your own risk. Any reliance you place on such information is therefore strictly at your own risk.

All official trademark data, including owner information, should be verified by visiting the official USPTO website at www.uspto.gov. This site is not intended to replace professional legal advice and should not be used as a substitute for consulting with a legal professional who is knowledgeable about trademark law.