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name:-0.013751983642578
name:-0.011337995529175
name:-0.00067710876464844
Luo; Jiexin Patent Filings

Luo; Jiexin

Patent Applications and Registrations

Patent applications and USPTO patent grants for Luo; Jiexin.The latest application filed is for "tcad emulation calibration method of soi field effect transistor".

Company Profile
0.17.16
  • Luo; Jiexin - Shanghai CN
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Modeling method of SPICE model series of SOI FET
Grant 9,953,118 - Chen , et al. April 24, 2
2018-04-24
Method for determining BSIMSOI4 DC model parameters
Grant 9,134,361 - Chen , et al. September 15, 2
2015-09-15
PD SOI device with a body contact structure
Grant 8,937,354 - Chen , et al. January 20, 2
2015-01-20
TCAD emulation calibration method of SOI field effect transistor
Grant 8,667,440 - Chai , et al. March 4, 2
2014-03-04
Vertical SOI bipolar junction transistor and manufacturing method thereof
Grant 8,629,029 - Chen , et al. January 14, 2
2014-01-14
TCAD Emulation Calibration Method of SOI Field Effect Transistor
App 20130152033 - Chai; Zhan ;   et al.
2013-06-13
Method of reducing floating body effect of SOI MOS device via a large tilt ion implantation
Grant 8,450,195 - Chen , et al. May 28, 2
2013-05-28
Method for Determining BSIMSOI4 DC Model Parameters
App 20130054210 - Chen; Jing ;   et al.
2013-02-28
Modeling Method of SPICE Model Series of SOI FET
App 20130054209 - Chen; Jing ;   et al.
2013-02-28
Equivalent Electrical Model of SOI FET of Body Leading-Out Structure, and Modeling Method Thereof
App 20130054219 - Chen; Jing ;   et al.
2013-02-28
SOI MOS device having a source/body ohmic contact and manufacturing method thereof
Grant 8,354,310 - Chen , et al. January 15, 2
2013-01-15
SOI MOS device having BTS structure and manufacturing method thereof
Grant 8,354,714 - Chen , et al. January 15, 2
2013-01-15
Manufacturing method of SOI MOS device eliminating floating body effects
Grant 8,324,035 - Chen , et al. December 4, 2
2012-12-04
Pd Soi Device With A Body Contact Structure
App 20120205743 - Chen; Jing ;   et al.
2012-08-16
Manufacturing Method Of Soi Mos Device Eliminating Floating Body Effects
App 20120115287 - Chen; Jing ;   et al.
2012-05-10
Method of Reducing Floating Body Effect of SOI MOS Device Via a Large Tilt Ion Implantation
App 20120021571 - Chen; Jing ;   et al.
2012-01-26
Soi Mos Device Having Bts Structure And Manufacturing Method Thereof
App 20120012931 - Chen; Jing ;   et al.
2012-01-19
Soi Mos Device Having A Source/body Ohmic Contact And Manufacturing Method Thereof
App 20120009741 - Chen; Jing ;   et al.
2012-01-12
MOS Structure with Suppressed SOI Floating Body Effect and Manufacturing Method thereof
App 20110291191 - Chen; Jing ;   et al.
2011-12-01
Vertical Soi Bipolar Junction Transistor And Manufacturing Method Thereof
App 20110233727 - Chen; Jing ;   et al.
2011-09-29
Mos-type Esd Protection Device In Soi And Manufacturing Method Thereof
App 20110221002 - Chen; Jing ;   et al.
2011-09-15

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