| Patent | Date |
|---|
Array of pillars located in a uniform pattern
Grant 11,424,260 - Lai , et al. August 23, 2 | 2022-08-23 |
High thermal stability SiO.sub.x doped GeSbTe materials suitable for embedded PCM application
Grant 11,362,276 - Cheng , et al. June 14, 2 | 2022-06-14 |
Memory material, and memory device applying the same
Grant 11,355,552 - Cheng , et al. June 7, 2 | 2022-06-07 |
Three dimensional memory device and method for fabricating the same
Grant 11,315,826 - Lai , et al. April 26, 2 | 2022-04-26 |
Memory device with lateral offset
Grant 11,315,945 - Lai , et al. April 26, 2 | 2022-04-26 |
SELECTOR DEVICES INCLUDING S-DOPED AsSeGeSi CHALCOGENIDES
App 20220123209 - CHENG; Huai-Yu ; et al. | 2022-04-21 |
Semiconductor device and memory cell
Grant 11,289,540 - Cheng , et al. March 29, 2 | 2022-03-29 |
Suppressing oxidation of silicon germanium selenium arsenide material
Grant 11,271,155 - Cheng , et al. March 8, 2 | 2022-03-08 |
Small Line Or Pillar Structure And Process
App 20220069211 - LUNG; Hsiang-Lan ; et al. | 2022-03-03 |
Memory Material And Memory Device Applying The Same
App 20220045128 - CHENG; Huai-Yu ; et al. | 2022-02-10 |
3D memory array having select lines
Grant 11,211,395 - Lung December 28, 2 | 2021-12-28 |
Semiconductor Device
App 20210391303 - Lung; Hsiang-Lan | 2021-12-16 |
Multi-level Cell Threshold Voltage Operation Of One-selector-one-resistor Structure Included In A Crossbar Array
App 20210375360 - Gong; Nanbo ; et al. | 2021-12-02 |
C--As--Se--Ge ovonic materials for selector devices and memory devices using same
Grant 11,158,787 - Cheng , et al. October 26, 2 | 2021-10-26 |
Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array
Grant 11,139,025 - Gong , et al. October 5, 2 | 2021-10-05 |
HIGH THERMAL STABILITY SiOX DOPED GeSbTe MATERIALS SUITABLE FOR EMBEDDED PCM APPLICATION
App 20210305507 - CHENG; Huai-Yu ; et al. | 2021-09-30 |
Suppressing Oxidation Of Silicon Germanium Selenium Arsenide Material
App 20210288251 - Cheng; Cheng-Wei ; et al. | 2021-09-16 |
Phase Change Memory With A Carbon Buffer Layer
App 20210249600 - CHIEN; Wei-Chih ; et al. | 2021-08-12 |
Three Dimensional Memory Device And Method For Fabricating The Same
App 20210242072 - LAI; Erh-Kun ; et al. | 2021-08-05 |
Multi-level Cell Threshold Voltage Operation Of One-selector-one-resistor Structure Included In A Crossbar Array
App 20210225441 - Gong; Nanbo ; et al. | 2021-07-22 |
3D NOR memory having vertical gate structures
Grant 11,069,704 - Lai , et al. July 20, 2 | 2021-07-20 |
Memory Device
App 20210217767 - LAI; Erh-Kun ; et al. | 2021-07-15 |
Semiconductor Device And Memory Cell
App 20210210554 - CHENG; Huai-Yu ; et al. | 2021-07-08 |
Array Of Pillars Located In A Uniform Pattern
App 20210193673 - Lai; Erh-Kun ; et al. | 2021-06-24 |
CAsSeGe OVONIC MATERIALS FOR SELECTOR DEVICES AND MEMORY DEVICES USING SAME
App 20210184112 - CHENG; Huai-Yu ; et al. | 2021-06-17 |
Array of pillars located in a uniform pattern
Grant 11,037,947 - Lai , et al. June 15, 2 | 2021-06-15 |
3d Memory With Confined Cell
App 20210143216 - LAI; Erh-Kun ; et al. | 2021-05-13 |
Semiconductor Device And Memory Cell
App 20210111224 - CHENG; Huai-Yu ; et al. | 2021-04-15 |
Semiconductor device and memory cell
Grant 10,978,511 - Cheng , et al. April 13, 2 | 2021-04-13 |
Array of pillars located in a uniform pattern
Grant 10,978,466 - Lai , et al. April 13, 2 | 2021-04-13 |
Layer cost scalable 3D phase change cross-point memory
Grant 10,950,786 - Lung , et al. March 16, 2 | 2021-03-16 |
3d Memory Array Having Select Lines
App 20210066314 - LUNG; Hsiang-Lan | 2021-03-04 |
3D memory with confined cell
Grant 10,937,832 - Lai , et al. March 2, 2 | 2021-03-02 |
Memory Device
App 20210042030 - LUNG; Hsiang-Lan ; et al. | 2021-02-11 |
Crenellated charge storage structures for 3D NAND
Grant 10,916,560 - Lai , et al. February 9, 2 | 2021-02-09 |
Memory device
Grant 10,915,248 - Lung , et al. February 9, 2 | 2021-02-09 |
Memory Apparatus And Data Access Method For Memory
App 20210035644 - CHIEN; WEI-CHIH ; et al. | 2021-02-04 |
3D NOR memory having vertical source and drain structures
Grant 10,910,393 - Lai , et al. February 2, 2 | 2021-02-02 |
Pitch scalable 3D NAND
Grant 10,840,254 - Lung November 17, 2 | 2020-11-17 |
3d Nor Memory Having Vertical Source And Drain Structures
App 20200343252 - Lai; Erh-Kun ; et al. | 2020-10-29 |
Bit cost scalable 3D phase change cross-point memory
Grant 10,818,729 - Lung , et al. October 27, 2 | 2020-10-27 |
Array Of Pillars Located In A Uniform Pattern
App 20200328223 - Lai; Erh-Kun ; et al. | 2020-10-15 |
3d Nor Memory Having Vertical Gate Structures
App 20200328224 - Lai; Erh-Kun ; et al. | 2020-10-15 |
Barrier Layer For Selector Devices And Memory Devices Using Same
App 20200295083 - CHENG; Huai-Yu ; et al. | 2020-09-17 |
Crenellated Charge Storage Structures For 3d Nand
App 20200227432 - Lai; Erh-Kun ; et al. | 2020-07-16 |
In-memory Convolution For Machine Learning
App 20200176056 - Lung; Hsiang-Lan | 2020-06-04 |
In-memory convolution for machine learning
Grant 10,672,469 - Lung | 2020-06-02 |
In-memory Data Pooling For Machine Learning
App 20200134437 - Lung; Hsiang-Lan | 2020-04-30 |
Reducing word line capacitance in 3D memory
Grant 10,636,812 - Lai , et al. | 2020-04-28 |
Self-aligned 3D memory with confined cell
Grant 10,593,875 - Lai , et al. | 2020-03-17 |
Superlattice-like switching devices
Grant 10,541,271 - Cheng , et al. Ja | 2020-01-21 |
3d Memory With Confined Cell
App 20190393268 - LAI; Erh-Kun ; et al. | 2019-12-26 |
Self-aligned di-silicon silicide bit line and source line landing pads in 3D vertical channel memory
Grant 10,515,810 - Lai , et al. Dec | 2019-12-24 |
Self-aligned 3d Memory With Confined Cell
App 20190386213 - LAI; Erh-Kun ; et al. | 2019-12-19 |
Three dimensional memory device with etch-stop structure
Grant 10,497,714 - Lai , et al. De | 2019-12-03 |
Decoding scheme for 3D cross-point memory array
Grant 10,497,437 - Ho , et al. De | 2019-12-03 |
Pitch Scalable 3d Nand
App 20190363098 - LUNG; Hsiang-Lan | 2019-11-28 |
Layer Cost Scalable 3d Phase Change Cross-point Memory
App 20190355903 - LUNG; Hsiang-Lan ; et al. | 2019-11-21 |
Bit Cost Scalable 3d Phase Change Cross-point Memory
App 20190355790 - LUNG; Hsiang-Lan ; et al. | 2019-11-21 |
Memory device and method for fabricating the same
Grant 10,475,811 - Lai , et al. Nov | 2019-11-12 |
Low resistance vertical channel 3D memory
Grant 10,453,856 - Lai , et al. Oc | 2019-10-22 |
String Select Line Gate Oxide Method For 3d Vertical Channel Nand Memory
App 20190312050 - LAI; Erh-Kun ; et al. | 2019-10-10 |
Self-aligned Di-silicon Silicide Bit Line And Source Line Landing Pads In 3d Vertical Channel Memory
App 20190311907 - Lai; Erh-Kun ; et al. | 2019-10-10 |
Low Resistance Vertical Channel 3d Memory
App 20190304985 - LAI; Erh-Kun ; et al. | 2019-10-03 |
Te-free AsSeGe chalcogenides for selector devices and memory devices using same
Grant 10,374,009 - Cheng , et al. | 2019-08-06 |
Memory device and method for fabricating the same
Grant 10,332,835 - Lai , et al. | 2019-06-25 |
Memory Device And Method For Fabricating The Same
App 20190139885 - Lai; Erh-Kun ; et al. | 2019-05-09 |
Superlattice-like Switching Devices
App 20190115393 - CHENG; Huai-Yu ; et al. | 2019-04-18 |
Memory Device And Method For Fabricating The Same
App 20190096907 - Lai; Erh-Kun ; et al. | 2019-03-28 |
Three Dimensional Memory Device And Method For Fabricating The Same
App 20190035802 - Lai; Erh-Kun ; et al. | 2019-01-31 |
Memory device and method for fabricating the same
Grant 10,163,926 - Lai , et al. Dec | 2018-12-25 |
Fast switching 3D cross-point array
Grant 10,157,671 - Lung , et al. Dec | 2018-12-18 |
Method for manufacturing three dimensional stacked semiconductor structure and structure manufactured by the same
Grant 10,141,221 - Lai , et al. Nov | 2018-11-27 |
Memory Device And Method For Fabricating The Same
App 20180337191 - Lai; Erh-Kun ; et al. | 2018-11-22 |
Manufacturing Method Of Semiconductor Structure
App 20180301465 - Lai; Erh-Kun ; et al. | 2018-10-18 |
Manufacturing method of semiconductor structure
Grant 10,103,167 - Lai , et al. October 16, 2 | 2018-10-16 |
Memory Structure And Method For Manufacturing The Same
App 20180286809 - Lai; Erh-Kun ; et al. | 2018-10-04 |
Memory structure and method for manufacturing the same
Grant 10,090,250 - Lai , et al. October 2, 2 | 2018-10-02 |
Dielectric doped, Sb-rich GST phase change memory
Grant 10,050,196 - Cheng , et al. August 14, 2 | 2018-08-14 |
Method for manufacturing 3D NAND memory using gate replacement, and resulting structures
Grant 10,043,819 - Lai , et al. August 7, 2 | 2018-08-07 |
Memory device and method for operating the same
Grant 10,026,750 - Lai , et al. July 17, 2 | 2018-07-17 |
3D phase change memory with high endurance
Grant 9,972,660 - Lung , et al. May 15, 2 | 2018-05-15 |
GaSbGe phase change memory materials
Grant 9,917,252 - Cheng , et al. March 13, 2 | 2018-03-13 |
3d Phase Change Memory With High Endurance
App 20180012938 - LUNG; Hsiang-Lan ; et al. | 2018-01-11 |
Memory structure, method of operating the same, and method of manufacturing the same
Grant 9,818,760 - Lai , et al. November 14, 2 | 2017-11-14 |
Stacked bit line dual word line nonvolatile memory
Grant 9,799,663 - Lung October 24, 2 | 2017-10-24 |
Phase change memory with high endurance
Grant 9,793,323 - Lung , et al. October 17, 2 | 2017-10-17 |
Phase change memory array architecture achieving high write/read speed
Grant 9,779,813 - Lung , et al. October 3, 2 | 2017-10-03 |
Phase Change Memory Having A Composite Memory Element
App 20170263863 - LUNG; Hsiang-Lan ; et al. | 2017-09-14 |
Phase change memory with inter-granular switching
Grant 9,672,906 - Lung , et al. June 6, 2 | 2017-06-06 |
Memory having an interlayer insulating structure with different thermal resistance
Grant 9,659,998 - Lung May 23, 2 | 2017-05-23 |
Programming verify for nonvolatile memory
Grant 9,646,692 - Lung , et al. May 9, 2 | 2017-05-09 |
Phase Change Memory Array Architecture Achieving High Write/read Speed
App 20170076797 - Lung; Hsiang-Lan ; et al. | 2017-03-16 |
Integrated circuit with independent programmability
Grant 9,570,117 - Lung , et al. February 14, 2 | 2017-02-14 |
Memory and memory managing method
Grant 9,558,818 - Ho , et al. January 31, 2 | 2017-01-31 |
Memory structure
Grant 9,537,093 - Lai , et al. January 3, 2 | 2017-01-03 |
GaSbGe PHASE CHANGE MEMORY MATERIALS
App 20160372661 - CHENG; HUAI-YU ; et al. | 2016-12-22 |
Phase Change Memory With Inter-granular Switching
App 20160372188 - LUNG; HSIANG-LAN ; et al. | 2016-12-22 |
Stacked Bit Line Dual Word Line Nonvolatile Memory
App 20160365349 - LUNG; HSIANG-LAN | 2016-12-15 |
Memory device and operation method
Grant 9,507,663 - Ho , et al. November 29, 2 | 2016-11-29 |
Memory Device And Operation Method
App 20160328288 - Ho; Hsin-Yi ; et al. | 2016-11-10 |
Refresh of nonvolatile memory cells and reference cells with resistance drift
Grant 9,472,274 - Lung October 18, 2 | 2016-10-18 |
Stacked bit line dual word line nonvolatile memory
Grant 9,466,566 - Lung October 11, 2 | 2016-10-11 |
Dynamic redundancy repair
Grant 9,449,720 - Lung September 20, 2 | 2016-09-20 |
Phase change memory coding
Grant 9,336,867 - Lung , et al. May 10, 2 | 2016-05-10 |
Multiple phase change materials in an integrated circuit for system on a chip application
Grant 9,336,879 - Lung , et al. May 10, 2 | 2016-05-10 |
Integrated Circuit With Independent Programmability
App 20160099028 - Lung; Hsiang-Lan ; et al. | 2016-04-07 |
Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory
Grant 9,236,568 - Lung January 12, 2 | 2016-01-12 |
Phase change memory material and system for embedded memory applications
Grant 9,214,229 - Cheng , et al. December 15, 2 | 2015-12-15 |
Uniform critical dimension size pore for PCRAM application
Grant 9,166,165 - Breitwisch , et al. October 20, 2 | 2015-10-20 |
Multiple Phase Change Materials In An Integrated Circuit For System On A Chip Application
App 20150214479 - LUNG; Hsiang-Lan ; et al. | 2015-07-30 |
PCRAM with current flowing laterally relative to axis defined by electrodes
Grant 9,082,954 - Lung , et al. July 14, 2 | 2015-07-14 |
Integrated circuit including vertical diode
Grant 9,064,794 - Happ , et al. June 23, 2 | 2015-06-23 |
Stacked Bit Line Dual Word Line Nonvolatile Memory
App 20150155236 - LUNG; HSIANG-LAN | 2015-06-04 |
Dielectric charge trapping memory cells with redundancy
Grant 9,019,771 - Lung , et al. April 28, 2 | 2015-04-28 |
Low cost scalable 3D memory
Grant 9,018,692 - Lung April 28, 2 | 2015-04-28 |
Blocking current leakage in a memory array
Grant 9,001,550 - Lung April 7, 2 | 2015-04-07 |
Thermally confined electrode for programmable resistance memory
Grant 8,987,700 - Lai , et al. March 24, 2 | 2015-03-24 |
Thermally-confined spacer PCM cells
Grant 8,981,330 - Lung March 17, 2 | 2015-03-17 |
Stacked bit line dual word line nonvolatile memory
Grant 8,975,122 - Lung March 10, 2 | 2015-03-10 |
Integrated circuit 3D phase change memory array and manufacturing method
Grant 8,964,442 - Lung February 24, 2 | 2015-02-24 |
Ge-Rich GST-212 phase change memory materials
Grant 8,946,666 - Cheng , et al. February 3, 2 | 2015-02-03 |
Mask read only memory containing diodes and method of manufacturing the same
Grant 8,946,671 - Lai , et al. February 3, 2 | 2015-02-03 |
Polysilicon pillar bipolar transistor with self-aligned memory element
Grant 8,933,536 - Lung , et al. January 13, 2 | 2015-01-13 |
Sidewall diode driving device and memory using same
Grant 8,927,957 - Lung January 6, 2 | 2015-01-06 |
Phase Change Memory Material And System For Embedded Memory Applications
App 20140376309 - CHENG; HUAI-YU ; et al. | 2014-12-25 |
Method for making memory cell by melting phase change material in confined space
Grant 8,916,414 - Cheng , et al. December 23, 2 | 2014-12-23 |
Manufacturing method for pipe-shaped electrode phase change memory
Grant 8,912,515 - Lung December 16, 2 | 2014-12-16 |
Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
Grant 8,907,316 - Lung , et al. December 9, 2 | 2014-12-09 |
Phase change memory cell array with self-converged bottom electrode and method for manufacturing
Grant 8,860,111 - Lung , et al. October 14, 2 | 2014-10-14 |
Self aligned fin-type programmable memory cell
Grant 8,853,047 - Lung , et al. October 7, 2 | 2014-10-07 |
Method For Making Memory Cell By Melting Phase Change Material In Confined Space
App 20140264240 - CHENG; Huai-Yu ; et al. | 2014-09-18 |
Self Aligned Fin-type Programmable Memory Cell
App 20140256110 - LUNG; HSIANG-LAN ; et al. | 2014-09-11 |
Memory And Memory Managing Method
App 20140254257 - Ho; Hsin Yi ; et al. | 2014-09-11 |
Integrated circuit 3D memory array and manufacturing method
Grant 8,829,646 - Lung , et al. September 9, 2 | 2014-09-09 |
Small footprint phase change memory cell
Grant 8,809,828 - Breitwisch , et al. August 19, 2 | 2014-08-19 |
Integrated Circuit 3d Phase Change Memory Array And Manufacturing Method
App 20140198553 - LUNG; HSIANG-LAN | 2014-07-17 |
Composite target sputtering for forming doped phase change materials
Grant 8,772,747 - Cheng , et al. July 8, 2 | 2014-07-08 |
Small Footprint Phase Change Memory Cell
App 20140166967 - Breitwisch; Matthew J. ; et al. | 2014-06-19 |
Uniform Critical Dimension Size Pore For Pcram Application
App 20140154862 - Breitwisch; Matthew J. ; et al. | 2014-06-05 |
Self aligned fin-type programmable memory cell
Grant 8,729,521 - Lung , et al. May 20, 2 | 2014-05-20 |
Small footprint phase change memory cell
Grant 8,728,859 - Breitwisch , et al. May 20, 2 | 2014-05-20 |
Stacked Bit Line Dual Word Line Nonvolatile Memory
App 20140120665 - LUNG; HSIANG-LAN | 2014-05-01 |
Dielectric Charge Trapping Memory Cells With Redundancy
App 20140119127 - Lung; Hsiang-Lan ; et al. | 2014-05-01 |
Phase Change Memory Coding
App 20140119110 - LUNG; HSIANG-LAN ; et al. | 2014-05-01 |
Buried bit line anti-fuse one-time-programmable nonvolatile memory
Grant 8,679,917 - Lung March 25, 2 | 2014-03-25 |
Integrated Circuit Including Vertical Diode
App 20140065787 - Happ; Thomas ; et al. | 2014-03-06 |
Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions
Grant 8,664,689 - Lung , et al. March 4, 2 | 2014-03-04 |
Sidewall Diode Driving Device And Memory Using Same
App 20140042382 - LUNG; HSIANG-LAN | 2014-02-13 |
Method for fabrication of crystalline diodes for resistive memories
Grant 8,637,844 - Rajendran , et al. January 28, 2 | 2014-01-28 |
Phase change memory coding
Grant 8,634,235 - Lung , et al. January 21, 2 | 2014-01-21 |
Thermally-Confined Spacer PCM Cells
App 20140014888 - Lung; Hsiang-Lan | 2014-01-16 |
Stacked bit line dual word line nonvolatile memory
Grant 8,624,299 - Lung January 7, 2 | 2014-01-07 |
Phase change memory cell having vertical channel access transistor
Grant 8,624,236 - Lung , et al. January 7, 2 | 2014-01-07 |
Phase change memory bridge cell with diode isolation device
Grant 8,610,098 - Lung December 17, 2 | 2013-12-17 |
Isolation device free memory
Grant 8,605,495 - Lung December 10, 2 | 2013-12-10 |
Sidewall Thin Film Electrode with Self-Aligned Top Electrode and Programmable Resistance Memory
App 20130306931 - LUNG; HSIANG-LAN | 2013-11-21 |
Integrated circuit including vertical diode
Grant 8,586,960 - Happ , et al. November 19, 2 | 2013-11-19 |
Buried Bit Line Anti-fuse One-time-programmable Nonvolatile Memory
App 20130286709 - Lung; Hsiang-Lan | 2013-10-31 |
Blocking Current Leakage In A Memory Array
App 20130286711 - LUNG; HSIANG-LAN | 2013-10-31 |
Composite Target Sputtering For Forming Doped Phase Change Materials
App 20130234093 - CHENG; HUAI-YU ; et al. | 2013-09-12 |
Method of forming memory cell access device
Grant 8,525,290 - Lai , et al. September 3, 2 | 2013-09-03 |
4F2 self align fin bottom electrodes FET drive phase change memory
Grant 8,513,637 - Lung August 20, 2 | 2013-08-20 |
Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory
Grant 8,497,182 - Lung July 30, 2 | 2013-07-30 |
Phase change device for interconnection of programmable logic device
Grant 8,497,705 - Lung July 30, 2 | 2013-07-30 |
Buried bit line anti-fuse one-time-programmable nonvolatile memory
Grant 8,476,157 - Lung July 2, 2 | 2013-07-02 |
Flat lower bottom electrode for phase change memory cell
Grant 8,471,236 - Breitwisch , et al. June 25, 2 | 2013-06-25 |
Thermally Confined Electrode For Programmable Resistance Memory
App 20130140513 - Lai; Sheng-Chih ; et al. | 2013-06-06 |
Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process
Grant 8,445,313 - Breitwisch , et al. May 21, 2 | 2013-05-21 |
3D two bit-per-cell NAND flash memory
Grant 8,437,192 - Lung , et al. May 7, 2 | 2013-05-07 |
3D memory array arranged for FN tunneling program and erase
Grant 8,426,294 - Lung , et al. April 23, 2 | 2013-04-23 |
Composite target sputtering for forming doped phase change materials
Grant 8,426,242 - Cheng , et al. April 23, 2 | 2013-04-23 |
3d Memory And Decoding Technologies
App 20130094273 - CHIEN; WEI-CHIH ; et al. | 2013-04-18 |
Phase change memory cell having top and bottom sidewall contacts
Grant 8,415,651 - Lung April 9, 2 | 2013-04-09 |
Memory device and method for sensing and fixing margin cells
Grant 8,406,033 - Lung , et al. March 26, 2 | 2013-03-26 |
Cross-point self-aligned reduced cell size phase change memory
Grant 8,395,935 - Lung , et al. March 12, 2 | 2013-03-12 |
Phase Change Memory Cell Having Vertical Channel Access Transistor
App 20130056699 - LUNG; HSIANG-LAN ; et al. | 2013-03-07 |
Phase change memory having one or more non-constant doping profiles
Grant 8,363,463 - Shih , et al. January 29, 2 | 2013-01-29 |
Phase change memory cells having vertical channel access transistor and memory plane
Grant 8,350,316 - Lung , et al. January 8, 2 | 2013-01-08 |
Method Of Forming Memory Cell Access Device
App 20120326265 - Lai; Erh-Kun ; et al. | 2012-12-27 |
Ge-RICH GST-212 PHASE CHANGE MEMORY MATERIALS
App 20120326111 - Cheng; Huai-Yu ; et al. | 2012-12-27 |
Dielectric mesh isolated phase change structure for phase change memory
Grant 8,324,605 - Lung , et al. December 4, 2 | 2012-12-04 |
Multiple phase change materials in an integrated circuit for system on a chip application
Grant 8,315,088 - Lung November 20, 2 | 2012-11-20 |
Phase change memory cell having vertical channel access transistor
Grant 8,313,979 - Lung , et al. November 20, 2 | 2012-11-20 |
Isolation Device Free Memory
App 20120287706 - Lung; Hsiang-Lan | 2012-11-15 |
Self-aligned bit line under word line memory array
Grant 8,310,864 - Lung , et al. November 13, 2 | 2012-11-13 |
Flat Lower Bottom Electrode For Phase Change Memory Cell
App 20120280197 - Breitwisch; Matthew J. ; et al. | 2012-11-08 |
Method For Forming A Self-aligned Bit Line For Pcram And Self-aligned Etch Back Process
App 20120276688 - Breitwisch; Matthew J. ; et al. | 2012-11-01 |
Sidewall Thin Film Electrode With Self-aligned Top Electrode And Programmable Resistance Memory
App 20120267597 - Lung; Hsiang-Lan | 2012-10-25 |
Flat lower bottom electrode for phase change memory cell
Grant 8,283,650 - Breitwisch , et al. October 9, 2 | 2012-10-09 |
Method for forming a self-aligned bit line for PCRAM and self-aligned etch back process
Grant 8,273,598 - Breitwisch , et al. September 25, 2 | 2012-09-25 |
3d Memory Array Arranged For Fn Tunneling Program And Erase
App 20120231613 - LUNG; HSIANG-LAN ; et al. | 2012-09-13 |
Phase change memory cell with filled sidewall memory element and method for fabricating the same
Grant 8,263,960 - Lung , et al. September 11, 2 | 2012-09-11 |
Method For Forming A Self-aligned Bit Line For Pcram And Self-aligned Etch Back Process
App 20120202333 - Breitwisch; Matthew J. ; et al. | 2012-08-09 |
Methods and apparatus for reducing defect bits in phase change memory
Grant 8,238,149 - Shih , et al. August 7, 2 | 2012-08-07 |
Polysilicon plug bipolar transistor for phase change memory
Grant 8,237,144 - Lung , et al. August 7, 2 | 2012-08-07 |
4F.sup.2 self align side wall active phase change memory
Grant 8,237,148 - Lung August 7, 2 | 2012-08-07 |
Self-aligned, embedded phase change RAM
Grant 8,237,140 - Lung , et al. August 7, 2 | 2012-08-07 |
Phase Change Memory Cell Array With Self-converged Bottom Electrode And Method For Manufacturing
App 20120193599 - Lung; Hsiang-Lan ; et al. | 2012-08-02 |
Composite Target Sputtering For Forming Doped Phase Change Materials
App 20120193595 - Cheng; Huai-Yu ; et al. | 2012-08-02 |
Refresh circuitry for phase change memory
Grant 8,228,721 - Lung July 24, 2 | 2012-07-24 |
Low Cost Scalable 3d Memory
App 20120181599 - LUNG; HSIANG-LAN | 2012-07-19 |
Method for making self aligning pillar memory cell device
Grant 8,222,071 - Lung July 17, 2 | 2012-07-17 |
3D memory array arranged for FN tunneling program and erase
Grant 8,203,187 - Lung , et al. June 19, 2 | 2012-06-19 |
Phase change memory cell array with self-converged bottom electrode and method for manufacturing
Grant 8,178,386 - Lung , et al. May 15, 2 | 2012-05-15 |
Phase Change Device for Interconnection of Programmable Logic Device
App 20120112788 - Lung; Hsiang-Lan | 2012-05-10 |
Integrated circuit 3D phase change memory array and manufacturing method
Grant 8,173,987 - Lung May 8, 2 | 2012-05-08 |
Substrate symmetrical silicide source/drain surrounding gate transistor
Grant 8,164,146 - Lung April 24, 2 | 2012-04-24 |
Cross-Point Self-Aligned Reduced Cell Size Phase Change Memory
App 20120087181 - Lung; Hsiang-Lan ; et al. | 2012-04-12 |
3D integrated circuit layer interconnect
Grant 8,154,128 - Lung April 10, 2 | 2012-04-10 |
PCRAM With Current Flowing Laterally Relative to Axis Defined By Electrodes
App 20120075925 - Lung; Hsiang-Lan ; et al. | 2012-03-29 |
Self-align planerized bottom electrode phase change memory and manufacturing method
Grant 8,143,089 - Lung March 27, 2 | 2012-03-27 |
Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
Grant 8,143,612 - Lung , et al. March 27, 2 | 2012-03-27 |
Method for manufacturing a phase change memory device with pillar bottom electrode
Grant 8,138,028 - Lung , et al. March 20, 2 | 2012-03-20 |
One-mask Phase Change Memory Process Integration
App 20120037877 - Breitwisch; Matthew J. ; et al. | 2012-02-16 |
Phase change memory cell with reduced switchable volume
Grant 8,115,186 - Breitwisch , et al. February 14, 2 | 2012-02-14 |
Vacuum jacket for phase change memory element
Grant 8,110,430 - Lung February 7, 2 | 2012-02-07 |
Method for making a self aligning memory device
Grant 8,110,456 - Lung February 7, 2 | 2012-02-07 |
Polysilicon Plug Bipolar Transistor For Phase Change Memory
App 20120018845 - Lung; Hsiang-Lan ; et al. | 2012-01-26 |
Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the method
Grant 8,101,938 - Lung January 24, 2 | 2012-01-24 |
Method for making a phase change memory device with vacuum cell thermal isolation
Grant 8,097,487 - Lung January 17, 2 | 2012-01-17 |
Integrated circuit device with single crystal silicon on silicide and manufacturing method
Grant 8,093,661 - Lung , et al. January 10, 2 | 2012-01-10 |
Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
Grant 8,089,137 - Lung , et al. January 3, 2 | 2012-01-03 |
Phase Change Memory Coding
App 20110317480 - LUNG; HSIANG-LAN ; et al. | 2011-12-29 |
Ring-shaped electrode and manufacturing method for same
Grant 8,084,760 - Lung , et al. December 27, 2 | 2011-12-27 |
Self-aligned Bit Line Under Word Line Memory Array
App 20110305074 - Lung; Hsiang-Lan ; et al. | 2011-12-15 |
3d Two-bit-per-cell Nand Flash Memory
App 20110286283 - LUNG; HSIANG-LAN ; et al. | 2011-11-24 |
Thin film fuse phase change cell with thermal isolation pad and manufacturing method
Grant 8,062,923 - Lung November 22, 2 | 2011-11-22 |
2T2R-1T1R mix mode phase change memory array
Grant 8,064,248 - Lung November 22, 2 | 2011-11-22 |
Two-bits per cell not-and-gate (NAND) nitride trap memory
Grant 8,063,428 - Lung November 22, 2 | 2011-11-22 |
Self Aligned Fin-type Programmable Memory Cell
App 20110278528 - Lung; Hsiang-Lan ; et al. | 2011-11-17 |
Phase change device having two or more substantial amorphous regions in high resistance state
Grant 8,059,449 - Shih , et al. November 15, 2 | 2011-11-15 |
Vacuum Jacket For Phase Change Memory Element
App 20110263075 - Lung; Hsiang Lan | 2011-10-27 |
Stacked Bit Line Dual Word Line Nonvolatile Memory
App 20110241078 - Lung; Hsiang-Lan | 2011-10-06 |
Integrated Circuit 3d Memory Array And Manufacturing Method
App 20110241077 - LUNG; HSIANG-LAN | 2011-10-06 |
Polysilicon plug bipolar transistor for phase change memory
Grant 8,030,635 - Lung , et al. October 4, 2 | 2011-10-04 |
Memory array with diode driver and method for fabricating the same
Grant 8,030,634 - Lung , et al. October 4, 2 | 2011-10-04 |
Memory device
Grant 8,026,505 - Lung September 27, 2 | 2011-09-27 |
Phase Change Memory Cell Having Vertical Channel Access Transistor
App 20110217818 - Lung; Hsiang-Lan ; et al. | 2011-09-08 |
Phase change memory cell with heater and method for fabricating the same
Grant 8,008,643 - Lung August 30, 2 | 2011-08-30 |
Phase change memory device and manufacturing method
Grant 8,008,114 - Lung , et al. August 30, 2 | 2011-08-30 |
Method For Fabrication Of Crystalline Diodes For Resistive Memories
App 20110198557 - Rajendran; Bipin ; et al. | 2011-08-18 |
I-shaped phase change memory cell
Grant 7,993,962 - Chen , et al. August 9, 2 | 2011-08-09 |
Stacked bit line dual word line nonvolatile memory
Grant 7,985,989 - Lung July 26, 2 | 2011-07-26 |
Phase change memory with dual word lines and source lines and method of operating same
Grant 7,978,509 - Lung , et al. July 12, 2 | 2011-07-12 |
Manufacturing Method for Pipe-Shaped Electrode Phase Change Memory
App 20110163288 - Lung; Hsiang-Lan | 2011-07-07 |
Method for Making Self Aligning Pillar Memory Cell Device
App 20110165753 - Lung; Hsiang-Lan | 2011-07-07 |
Memory cell device with coplanar electrode surface and method
Grant 7,972,895 - Lung July 5, 2 | 2011-07-05 |
Phase change memory cell having vertical channel access transistor
Grant 7,968,876 - Lung , et al. June 28, 2 | 2011-06-28 |
Phase change memory element
Grant 7,968,861 - Burr , et al. June 28, 2 | 2011-06-28 |
Multi-level memory cell having phase change element and asymmetrical thermal boundary
Grant 7,964,468 - Lung , et al. June 21, 2 | 2011-06-21 |
Memory device having wide area phase change element and small electrode contact area
Grant 7,964,437 - Lung June 21, 2 | 2011-06-21 |
Memory cell having a side electrode contact
Grant 7,964,863 - Lung June 21, 2 | 2011-06-21 |
Phase Change Memory Cell with Filled Sidewall Memory Element and Method for Fabricating the Same
App 20110133150 - Lung; Hsiang Lan ; et al. | 2011-06-09 |
Memory cell with memory element contacting ring-shaped upper end of bottom electrode
Grant 7,956,344 - Lung June 7, 2 | 2011-06-07 |
Method for fabrication of polycrystalline diodes for resistive memories
Grant 7,955,958 - Rajendran , et al. June 7, 2 | 2011-06-07 |
Memory Device
App 20110121253 - LUNG; Hsiang-Lan | 2011-05-26 |
Multiple Phase Change Materials In An Integrated Circuit For System On A Chip Application
App 20110116308 - LUNG; HSIANG-LAN | 2011-05-19 |
Refresh Circuitry for Phase Change Memory
App 20110116309 - Lung; Hsiang-Lan | 2011-05-19 |
Self-converging bottom electrode ring
Grant 7,935,564 - Breitwisch , et al. May 3, 2 | 2011-05-03 |
Vertical side wall active pin structures in a phase change memory and manufacturing methods
Grant 7,932,129 - Lung April 26, 2 | 2011-04-26 |
One-transistor, one-resistor, one-capacitor phase change memory
Grant 7,933,139 - Lung April 26, 2 | 2011-04-26 |
Thermally contained/insulated phase change memory device and method
Grant 7,932,101 - Lung April 26, 2 | 2011-04-26 |
Current constricting phase change memory element structure
Grant 7,932,507 - Chen , et al. April 26, 2 | 2011-04-26 |
Fully self-aligned pore-type memory cell having diode access device
Grant 7,932,506 - Lung , et al. April 26, 2 | 2011-04-26 |
3d Integrated Circuit Layer Interconnect
App 20110084397 - LUNG; HSIANG-LAN | 2011-04-14 |
Method for Making a Self Aligning Memory Device
App 20110076825 - Lung; Hsiang Lan | 2011-03-31 |
Substrate Symmetrical Silicide Source/drain Surrounding Gate Transistor
App 20110068418 - LUNG; HSIANG-LAN | 2011-03-24 |
2t2r-1t1r Mix Mode Phase Change Memory Array
App 20110063902 - LUNG; HSIANG-LAN | 2011-03-17 |
Phase Change Structure With Composite Doping For Phase Change Memory
App 20110049456 - LUNG; HSIANG-LAN ; et al. | 2011-03-03 |
Flat Lower Bottom Electrode For Phase Change Memory Cell
App 20110049462 - Breitwisch; Matthew J. ; et al. | 2011-03-03 |
Vacuum Cell Thermal Isolation for a Phase Change Memory Device
App 20110034003 - Lung; Hsiang Lan | 2011-02-10 |
Self-align Planerized Bottom Electrode Phase Change Memory And Manufacturing Method
App 20110017970 - LUNG; HSIANG-LAN | 2011-01-27 |
Refresh Circuitry For Phase Change Memory
App 20110013446 - LUNG; HSIANG-LAN | 2011-01-20 |
Phase Change Memory Having One Or More Non-constant Doping Profiles
App 20100328996 - SHIH; YEN-HAO ; et al. | 2010-12-30 |
Methods And Apparatus For Reducing Defect Bits In Phase Change Memory
App 20100328995 - SHIH; YEN-HAO ; et al. | 2010-12-30 |
Memory Device And Method For Sensing And Fixing Margin Cells
App 20100321987 - Lung; Hsiang-Lan ; et al. | 2010-12-23 |
Phase Change Memory Cells Having Vertical Channel Access Transistor and Memory Plane
App 20100295009 - Lung; Hsiang-Lan ; et al. | 2010-11-25 |
Memory Structure With Reduced-size Memory Element Between Memory Material Portions
App 20100297824 - Lung; Hsiang-Lan | 2010-11-25 |
Phase Change Memory Cell Having Vertical Channel Access Transistor
App 20100295123 - Lung; Hsiang-Lan ; et al. | 2010-11-25 |
Buried Bit Line Anti-fuse One-time-programmable Nonvolatile Memory
App 20100296328 - LUNG; HSIANG-LAN | 2010-11-25 |
One-transistor, One-resistor, One-capacitor Phase Change Memory
App 20100290271 - Lung; Hsiang-Lan | 2010-11-18 |
Phase Change Memory Device and Manufacturing Method
App 20100291747 - Lung; Hsiang Lan ; et al. | 2010-11-18 |
Integrated Circuit 3d Phase Change Memory Array And Manufacturing Method
App 20100270529 - LUNG; HSIANG-LAN | 2010-10-28 |
Integrated Circuit 3d Memory Array And Manufacturing Method
App 20100270593 - Lung; Hsiang-Lan ; et al. | 2010-10-28 |
Ring-shaped Electrode And Manufacturing Method For Same
App 20100264396 - Lung; Hsiang-Lan ; et al. | 2010-10-21 |
3d Memory Array Arranged For Fn Tunneling Program And Erase
App 20100265773 - LUNG; HSIANG-LAN ; et al. | 2010-10-21 |
Memory Device Having Wide Area Phase Change Element And Small Electrode Contact Area
App 20100261329 - Lung; Hsiang-Lan | 2010-10-14 |
4f2 Self Align Side Wall Active Phase Change Memory
App 20100237316 - LUNG; HSIANG LAN | 2010-09-23 |
Current Constricting Phase Change Memory Element Structure
App 20100193763 - Chen; Chieh-Fang ; et al. | 2010-08-05 |
Phase Change Memory With Dual Word Lines and Source Lines and Method of Operating Same
App 20100195378 - Lung; Hsiang Lan ; et al. | 2010-08-05 |
Polysilicon Pillar Bipolar Transistor With Self-aligned Memory Element
App 20100181649 - Lung; Hsiang-Lan ; et al. | 2010-07-22 |
Polysilicon Plug Bipolar Transistor For Phase Change Memory
App 20100176362 - Lung; Hsiang-Lan ; et al. | 2010-07-15 |
Integrated Circuit Memory With Single Crystal Silicon On Silicide Driver And Manufacturing Method
App 20100171086 - LUNG; HSIANG-LAN ; et al. | 2010-07-08 |
Integrated Circuit Device With Single Crystal Silicon On Silicide And Manufacturing Method
App 20100171188 - Lung; Hsiang-Lan ; et al. | 2010-07-08 |
Phase Change Device Having Two Or More Substantial Amorphous Regions In High Resistance State
App 20100165728 - SHIH; YEN-HAO ; et al. | 2010-07-01 |
Memory Cell Device And Programming Methods
App 20100157665 - Lung; Hsiang Lan ; et al. | 2010-06-24 |
Multi-level Memory Cell Having Phase Change Element And Asymmetrical Thermal Boundary
App 20100151652 - Lung; Hsiang Lan ; et al. | 2010-06-17 |
Phase Change Memory Cell and Manufacturing Method
App 20100144128 - Lung; Hsiang-Lan ; et al. | 2010-06-10 |
Memory Cell Having a Side Electrode Contact
App 20100133500 - Lung; Hsiang-Lan | 2010-06-03 |
Memory Cell Access Device Having A Pn-junction With Polycrystalline Plug And Single-crystal Semiconductor Regions
App 20100117049 - LUNG; HSIANG-LAN ; et al. | 2010-05-13 |
Memory Cell Access Device Having A Pn-junction With Polycrystalline And Single-crystal Semiconductor Regions
App 20100117048 - Lung; Hsiang-Lan ; et al. | 2010-05-13 |
Dielectric mesh isolated phase change structure for phase change memory
App 20100084624 - Lung; Hsiang-Lan ; et al. | 2010-04-08 |
Phase Change Memory Cell Having Interface Structures With Essentially Equal Thermal Impedances And Manufacturing Methods
App 20100072447 - Lung; Hsiang Lan | 2010-03-25 |
Phase Change Memory Cell In Via Array With Self-aligned, Self-converged Bottom Electrode And Method For Manufacturing
App 20100065808 - LUNG; Hsiang-Lan ; et al. | 2010-03-18 |
Thin Film Fuse Phase Change Cell With Thermal Isolation Pad And Manufacturing Method
App 20100068878 - Lung; Hsiang-Lan | 2010-03-18 |
Novel Sensing Circuit For Pcram Applications
App 20100067285 - Lung; Hsiang-Lan ; et al. | 2010-03-18 |
I-shaped Phase Change Memory Cell
App 20100055830 - Chen; Shih Hung ; et al. | 2010-03-04 |
Multiple Phase Change Materials In An Integrated Circuit For System On A Chip Application
App 20100046285 - LUNG; HSIANG-LAN | 2010-02-25 |
Programmable Resistive Memory Cell With Self-forming Gap
App 20100029062 - LUNG; Hsiang Lan | 2010-02-04 |
Memory Cell Device With Coplanar Electrode Surface And Method
App 20100029042 - LUNG; HSIANG-LAN | 2010-02-04 |
Mushroom Type Memory Cell Having Self-aligned Bottom Electrode And Diode Access Device
App 20100019215 - Lung; Hsiang-Lan ; et al. | 2010-01-28 |
Fully Self-aligned Pore-type Memory Cell Having Diode Access Device
App 20100019221 - Lung; Hsiang-Lan ; et al. | 2010-01-28 |
Buried Bit Line Anti-Fuse One-Time-Programmable Nonvolatile Memory
App 20090323388 - LUNG; HSIANG-LAN | 2009-12-31 |
Integrated Circuit Including Vertical Diode
App 20090316473 - Happ; Thomas ; et al. | 2009-12-24 |
Phase Change Memory Cell Having Top And Bottom Sidewall Contacts
App 20090309087 - LUNG; HSIANG-LAN | 2009-12-17 |
Phase Change Memory Cell with Reduced Switchable Volume
App 20090294748 - Breitwisch; Matthew J. ; et al. | 2009-12-03 |
Phase Change Memory With Tapered Heater
App 20090289242 - Breitwisch; Matthew ; et al. | 2009-11-26 |
Phase Change Device Having Two Or More Substantial Amorphous Regions In High Resistance State
App 20090279349 - Shih; Yen-Hao ; et al. | 2009-11-12 |
Phase Change Memory Device And Method Of Manufacture
App 20090268507 - Breitwisch; Matthew J. ; et al. | 2009-10-29 |
Memory Cell Having A Buried Phase Change Region And Method For Fabricating The Same
App 20090261313 - Lung; Hsiang-Lan ; et al. | 2009-10-22 |
Memory Cell Having Improved Mechanical Stability
App 20090251944 - Happ; Thomas D ; et al. | 2009-10-08 |
Memory Array With Diode Driver And Method For Fabricating The Same
App 20090242865 - Lung; Hsiang-Lan ; et al. | 2009-10-01 |
Stacked Bit Line Dual Word Line Nonvolatile Memory
App 20090236639 - LUNG; HSIANG-LAN | 2009-09-24 |
Self-converging Bottom Electrode Ring
App 20090212272 - Breitwisch; Matthew J. ; et al. | 2009-08-27 |
Method For Fabrication Of Polycrystalline Diodes For Resistive Memories
App 20090200534 - Rajendran; Bipin ; et al. | 2009-08-13 |
High Density Chalcogenide Memory Cells
App 20090194755 - Lung; Hsiang-Lan | 2009-08-06 |
Fill-in Etching Free Pore Device
App 20090189138 - Lung; Hsiang-Lan ; et al. | 2009-07-30 |
Memory Cell With Memory Element Contacting An Inverted T-shaped Bottom Electrode
App 20090184310 - LUNG; HSIANG-LAN | 2009-07-23 |
Integrated Circuit Including Diode Memory Cells
App 20090185411 - Happ; Thomas ; et al. | 2009-07-23 |
Method For Fabrication Of Single Crystal Diodes For Resistive Memories
App 20090176354 - Rajendran; Bipin ; et al. | 2009-07-09 |
Method Of Forming A Small Contact In Phase-change Memory
App 20090166603 - Lung; Hsiang-Lan | 2009-07-02 |
Phase Change Memory Cell Having Interface Structures With Essentially Equal Thermal Impedances And Manufacturing Methods
App 20090147564 - Lung; Hsiang Lan | 2009-06-11 |
Memory Cell Device With Circumferentially-Extending Memory Element
App 20090140230 - Lung; Hsiang Lan | 2009-06-04 |
Method for Making Self Aligning Pillar Memory Cell Device
App 20090101879 - Lung; Hsiang Lan | 2009-04-23 |
Method For Making A Self-converged Void And Bottom Electrode For Memory Cell
App 20090104771 - Lung; Hsiang Lan | 2009-04-23 |
Vacuum Jacketed Electrode For Phase Change Memory Element
App 20090098678 - LUNG; HSIANG LAN | 2009-04-16 |
Programmable Resistive Memory with Diode Structure
App 20090095948 - Lung; Hsiang-Lan ; et al. | 2009-04-16 |
Method For Making A Self-converged Memory Material Element For Memory Cell
App 20090098716 - Lung; Hsiang Lan | 2009-04-16 |
Phase Change Memory Cell Array With Self-converged Bottom Electrode And Method For Manufacturing
App 20090072216 - Lung; Hsiang Lan ; et al. | 2009-03-19 |
Phase Change Memory Cell In Via Array With Self-aligned, Self-converged Bottom Electrode And Method For Manufacturing
App 20090072215 - Lung; Hsiang Lan ; et al. | 2009-03-19 |
Phase Change Memory Cell With First and Second Transition Temperature Portions
App 20090057641 - Lung; Hsiang-Lan | 2009-03-05 |
High density chalcogenide memory cells
App 20090053886 - Lung; Hsiang Lan | 2009-02-26 |
Vertical Side Wall Active Pin Structures In A Phase Change Memory And Manufacturing Methods
App 20090042335 - Lung; Hsiang-Lan | 2009-02-12 |
Phase Change Memory Bridge Cell
App 20090032796 - Lung; Hsiang-Lan | 2009-02-05 |
Phase Change Memory With Dual Word Lines And Source Lines And Method Of Operating Same
App 20090034323 - Lung; Hsiang Lan ; et al. | 2009-02-05 |
Block Erase for Phase Change Memory
App 20090027950 - Lam; Chung Hon ; et al. | 2009-01-29 |
Vacuum Jacket For Phase Change Memory Element
App 20090023242 - LUNG; HSIANG-LAN | 2009-01-22 |
Current Constricting Phase Change Memory Element Structure
App 20090014704 - Chen; Chieh-Fang ; et al. | 2009-01-15 |
4f2 Self Align Fin Bottom Electrodes Fet Drive Phase Change Memory
App 20090014706 - Lung; Hsiang Lan | 2009-01-15 |
Phase Change Memory with Tapered Heater
App 20090001341 - Breitwisch; Matthew ; et al. | 2009-01-01 |
Stacked Bit Line Dual Word Line Nonvolatile Memory
App 20080286906 - Lung; Hsiang-Lan | 2008-11-20 |
Spacer Electrode Small Pin Phase Change Memory Ram And Manufacturing Method
App 20080274585 - LUNG; Hsiang Lan ; et al. | 2008-11-06 |
Method of Forming Phase Change Memory Cell With Reduced Switchable Volume
App 20080265234 - Breitwisch; Matthew J. ; et al. | 2008-10-30 |
Thermally Insulated Phase Change Memory Manufacturing Method
App 20080268565 - Lung; Hsiang-Lan | 2008-10-30 |
Two-Bits Per Cell Not-AND-Gate (NAND) Nitride Trap Memory
App 20080259691 - Lung; Hsiang-Lan | 2008-10-23 |
| 